Patents by Inventor Kevin Fairbairn
Kevin Fairbairn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12142460Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.Type: GrantFiled: August 16, 2023Date of Patent: November 12, 2024Assignee: Advanced Energy Industries, Inc.Inventors: Denis Shaw, Kevin Fairbairn, Daniel Carter
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Publication number: 20240079213Abstract: Plasma processing systems and methods are disclosed. The system may include at least one modulating supply that modulates plasma properties where the modulation of the plasma properties has a repetition period, T. A synchronization module configured to send a synchronization signal with a synchronization-signal-repetition-period that is an integer multiple of T to at least one piece of equipment connected to the plasma processing system. A waveform-communication module communicates characteristics of a characterized waveform to at least one piece of equipment connected to the plasma system to enable synchronization of pieces of equipment connected to the plasma processing system. The characterized waveform may contain information about the modulation of the plasma or information about a desired waveform of a piece of equipment connected to the plasma processing system.Type: ApplicationFiled: February 23, 2022Publication date: March 7, 2024Inventors: Gideon Van Zyl, Kevin Fairbairn, Denis Shaw
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Patent number: 11842884Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.Type: GrantFiled: March 11, 2022Date of Patent: December 12, 2023Assignee: Advanced Energy Industries, Inc.Inventors: Denis Shaw, Kevin Fairbairn, Daniel Carter
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Publication number: 20230395354Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.Type: ApplicationFiled: August 16, 2023Publication date: December 7, 2023Inventors: Denis Shaw, Kevin Fairbairn, Daniel Carter
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Publication number: 20230395355Abstract: Plasma processing systems and methods are disclosed. The system may include at least one modulating supply that modulates plasma properties where the modulation of the plasma properties has a repetition period, T. A synchronization module configured to send a synchronization signal with a synchronization-signal-repetition-period that is an integer multiple of T to at least one piece of equipment connected to the plasma processing system. A waveform-communication module communicates characteristics of a characterized waveform to at least one piece of equipment connected to the plasma system to enable synchronization of pieces of equipment connected to the plasma processing system. The characterized waveform may contain information about the modulation of the plasma or information about a desired waveform of a piece of equipment connected to the plasma processing system.Type: ApplicationFiled: August 16, 2023Publication date: December 7, 2023Inventors: Denis Shaw, Gideon Van Zyl, Kevin Fairbairn
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Publication number: 20230268162Abstract: Plasma processing systems and methods are disclosed. The system may include at least one modulating supply that modulates plasma properties where the modulation of the plasma properties has a repetition period, T. A synchronization module configured to send a synchronization signal with a synchronization-signal-repetition-period that is an integer multiple of T to at least one piece of equipment connected to the plasma processing system. A waveform-communication module communicates characteristics of a characterized waveform to at least one piece of equipment connected to the plasma system to enable synchronization of pieces of equipment connected to the plasma processing system. The characterized waveform may contain information about the modulation of the plasma or information about a desired waveform of a piece of equipment connected to the plasma processing system.Type: ApplicationFiled: February 23, 2022Publication date: August 24, 2023Inventors: Gideon Van Zyl, Kevin Fairbairn, Denis Shaw
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Publication number: 20230116058Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber comprising a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.Type: ApplicationFiled: September 5, 2022Publication date: April 13, 2023Inventors: Daniel Carter, Kevin Fairbairn, Denis Shaw, Victor Brouk
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Patent number: 11610761Abstract: Systems and methods for plasma processing are disclosed. A method includes applying pulsed power to a plasma processing chamber with an excitation source during a first processing step with a first duty cycle and applying, during the first processing step, an asymmetric periodic voltage waveform to a substrate support to produce a first plasma sheath voltage between a substrate and a plasma. Pulsed power is applied to the plasma processing chamber with the excitation source during a second processing step with a second duty cycle and during the second processing step, a different asymmetric periodic voltage waveform is applied to the substrate support to produce a different plasma sheath voltage between the substrate and the plasma.Type: GrantFiled: January 15, 2021Date of Patent: March 21, 2023Assignee: Advanced Energy Industries, Inc.Inventors: Kevin Fairbairn, Denis Shaw, Daniel Carter
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Publication number: 20220285131Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.Type: ApplicationFiled: March 11, 2022Publication date: September 8, 2022Inventors: Denis Shaw, Kevin Fairbairn, Daniel Carter
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Patent number: 11437221Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber comprising a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.Type: GrantFiled: February 9, 2021Date of Patent: September 6, 2022Assignee: Advanced Energy Industries, Inc.Inventors: Daniel Carter, Kevin Fairbairn, Denis Shaw, Victor Brouk
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Patent number: 11282677Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.Type: GrantFiled: June 9, 2020Date of Patent: March 22, 2022Assignee: Advanced Energy Industries, Inc.Inventors: Denis Shaw, Kevin Fairbairn, Daniel Carter
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Patent number: 11264209Abstract: Plasma processing systems and methods are disclosed. The system may include at least one modulating supply that modulates plasma properties where the modulation of the plasma properties has a repetition period, T. A synchronization module configured to send a synchronization signal with a synchronization-signal-repetition-period that is an integer multiple of T to at least one piece of equipment connected to the plasma processing system. A waveform-communication module communicates characteristics of a characterized waveform to at least one piece of equipment connected to the plasma system to enable synchronization of pieces of equipment connected to the plasma processing system. The characterized waveform may contain information about the modulation of the plasma or information about a desired waveform of a piece of equipment connected to the plasma processing system.Type: GrantFiled: September 24, 2020Date of Patent: March 1, 2022Assignee: Advanced Energy Industries, Inc.Inventors: Gideon Van Zyl, Kevin Fairbairn, Denis Shaw
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Publication number: 20210241996Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber comprising a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.Type: ApplicationFiled: February 9, 2021Publication date: August 5, 2021Inventors: Daniel Carter, Kevin Fairbairn, Denis Shaw, Victor Brouk
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Publication number: 20210134562Abstract: Systems and methods for plasma processing are disclosed. A method includes applying pulsed power to a plasma processing chamber with an excitation source during a first processing step with a first duty cycle and applying, during the first processing step, an asymmetric periodic voltage waveform to a substrate support to produce a first plasma sheath voltage between a substrate and a plasma. Pulsed power is applied to the plasma processing chamber with the excitation source during a second processing step with a second duty cycle and during the second processing step, a different asymmetric periodic voltage waveform is applied to the substrate support to produce a different plasma sheath voltage between the substrate and the plasma.Type: ApplicationFiled: January 15, 2021Publication date: May 6, 2021Inventors: Kevin Fairbairn, Denis Shaw, Daniel Carter
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Publication number: 20210074513Abstract: Plasma processing systems and methods are disclosed. The system may include at least one modulating supply that modulates plasma properties where the modulation of the plasma properties has a repetition period, T. A synchronization module configured to send a synchronization signal with a synchronization-signal-repetition-period that is an integer multiple of T to at least one piece of equipment connected to the plasma processing system. A waveform-communication module communicates characteristics of a characterized waveform to at least one piece of equipment connected to the plasma system to enable synchronization of pieces of equipment connected to the plasma processing system. The characterized waveform may contain information about the modulation of the plasma or information about a desired waveform of a piece of equipment connected to the plasma processing system.Type: ApplicationFiled: September 24, 2020Publication date: March 11, 2021Inventors: Gideon Van Zyl, Kevin Fairbairn, Denis Shaw
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Patent number: 10896807Abstract: Systems and methods for plasma processing are disclosed. A method includes applying pulsed power to a plasma processing chamber with an excitation source during a first processing step with a first duty cycle and applying, during the first processing step, an asymmetric periodic voltage waveform to a substrate support to produce a first plasma sheath voltage between a substrate and a plasma. Pulsed power is applied to the plasma processing chamber with the excitation source during a second processing step with a second duty cycle and during the second processing step, a different asymmetric periodic voltage waveform is applied to the substrate support to produce a different plasma sheath voltage between the substrate and the plasma.Type: GrantFiled: February 27, 2020Date of Patent: January 19, 2021Assignee: Advanced Energy Industries, Inc.Inventors: Kevin Fairbairn, Denis Shaw, Daniel Carter
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Publication number: 20210005428Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.Type: ApplicationFiled: June 9, 2020Publication date: January 7, 2021Inventors: Denis Shaw, Kevin Fairbairn, Daniel Carter
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Patent number: 10811227Abstract: Plasma processing systems and methods are disclosed. The system may include at least one modulating supply that modulates plasma properties where the modulation of the plasma properties has a repetition period, T. A synchronization module configured to send a synchronization signal with a synchronization-signal-repetition-period that is an integer multiple of T to at least one piece of equipment connected to the plasma processing system. A waveform-communication module communicates characteristics of a characterized waveform to at least one piece of equipment connected to the plasma system to enable synchronization of pieces of equipment connected to the plasma processing system. The characterized waveform may contain information about the modulation of the plasma or information about a desired waveform of a piece of equipment connected to the plasma processing system.Type: GrantFiled: November 16, 2018Date of Patent: October 20, 2020Assignee: ADVANCED ENERGY INDUSTRIES, INC.Inventors: Gideon Van Zyl, Kevin Fairbairn, Denis Shaw
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Patent number: 10811229Abstract: Plasma processing systems and methods are disclosed. The method includes generating and sustaining a plasma in a plasma chamber and producing a surface potential on a surface of a workpiece in the plasma chamber by applying, with a bias supply, an output waveform to a bias electrode within the plasma chamber where the output waveform has a repetition period, T. A waveform dataset is produced to represent the output waveform of the bias supply during the repetition period, T, and the waveform dataset is sent to one or more other pieces of equipment connected to the plasma chamber. A synchronization pulse with a synchronization-pulse-repetition-period is sent to the one or more other pieces of equipment connected to the plasma chamber to enable synchronization among the one or more other pieces of equipment.Type: GrantFiled: February 7, 2019Date of Patent: October 20, 2020Assignee: ADVANCED ENERGY INDUSTRIES, INC.Inventors: Gideon Van Zyl, Kevin Fairbairn, Denis Shaw
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Patent number: 10811228Abstract: Plasma processing systems and methods are disclosed. The method may include modulating plasma properties with a modulating supply where the modulation of the plasma properties has a repetition period, T. A waveform with the repetition period T is characterized to produce a waveform dataset, which includes at least one of information about the modulation of the plasma or a desired waveform of a piece of equipment connected to the plasma processing system. The waveform dataset is sent to at least one piece of equipment connected to the plasma system and a synchronization signal is sent with a synchronization signal repetition period that is an integer multiple of T to the at least one piece of equipment connected to the plasma system.Type: GrantFiled: January 14, 2019Date of Patent: October 20, 2020Assignee: ADVANCED ENERGY INDUSTRIES, INC.Inventors: Gideon Van Zyl, Kevin Fairbairn, Denis Shaw