Patents by Inventor Kevin Gerber

Kevin Gerber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Rapid chamber clean using concurrent in-situ and remote plasma sources
    Patent number: 10161034
    Abstract: A method for cleaning a processing chamber of a substrate processing system includes supplying nitrogen trifluoride (NF3) gas to a remote plasma source (RPS); generating RPS plasma using the RPS; supplying the RPS plasma to the processing chamber; supplying NF3 gas as bypass gas to the processing chamber; striking in-situ plasma in the processing chamber while the RPS plasma is supplied; and cleaning the processing chamber during a cleaning period using both the RPS plasma and the in-situ plasma.
    Type: Grant
    Filed: April 21, 2017
    Date of Patent: December 25, 2018
    Assignee: Lam Research Corporation
    Inventors: Keith Fox, Jonathan Church, James Lee, Matthew Mudrow, Kevin Gerber
  • RAPID CHAMBER CLEAN USING CONCURRENT IN-SITU AND REMOTE PLASMA SOURCES
    Publication number: 20180305814
    Abstract: A method for cleaning a processing chamber of a substrate processing system includes supplying nitrogen trifluoride (NF3) gas to a remote plasma source (RPS); generating RPS plasma using the RPS; supplying the RPS plasma to the processing chamber; supplying NF3 gas as bypass gas to the processing chamber; striking in-situ plasma in the processing chamber while the RPS plasma is supplied; and cleaning the processing chamber during a cleaning period using both the RPS plasma and the in-situ plasma.
    Type: Application
    Filed: April 21, 2017
    Publication date: October 25, 2018
    Inventors: Keith Fox, Jonathan Church, James Lee, Matthew Mudrow, Kevin Gerber
  • Method and apparatus for purging and plasma suppression in a process chamber
    Patent number: 9399228
    Abstract: A substrate processing system includes a showerhead that comprises a head portion and a stem portion and that delivers precursor gas to a processing chamber. A baffle includes a base portion having an outer diameter that is greater than an outer diameter of the head portion of the showerhead, that comprises a dielectric material and that is arranged between the head portion of the showerhead and an upper surface of the processing chamber.
    Type: Grant
    Filed: February 6, 2013
    Date of Patent: July 26, 2016
    Assignee: NOVELLUS SYSTEMS, INC.
    Inventors: Patrick Breiling, Kevin Gerber, Jennifer O'Loughlin, Nagraj Shankar, Pramod Subramonium
  • METHOD AND APPARATUS FOR PURGING AND PLASMA SUPPRESSION IN A PROCESS CHAMBER
    Publication number: 20140217193
    Abstract: A substrate processing system includes a showerhead that comprises a head portion and a stem portion and that delivers precursor gas to a processing chamber. A baffle includes a base portion having an outer diameter that is greater than an outer diameter of the head portion of the showerhead, that comprises a dielectric material and that is arranged between the head portion of the showerhead and an upper surface of the processing chamber.
    Type: Application
    Filed: February 6, 2013
    Publication date: August 7, 2014
    Applicant: Novellus Systems, Inc.
    Inventors: Patrick Breiling, Kevin Gerber, Jennifer O'Loughlin, Nagraj Shankar, Pramod Subramonium
  • Method of eliminating small bin defects in high throughput TEOS films
    Patent number: 8034725
    Abstract: This invention provides a high throughput PECVD process for depositing TEOS films in a multi-station sequential deposition chamber. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing small bin defects. The methods of the invention involve dedicating a first station for temperature soak while flowing purge gas. Stopping the flow of reactant gas and flowing the purge gas for station 1 eliminates TEOS condensation on a cold wafer surface and significantly reduces the number of defects in the film, particularly for short temperature soaks.
    Type: Grant
    Filed: March 12, 2010
    Date of Patent: October 11, 2011
    Assignee: Novellus Systems, Inc.
    Inventors: Jon Henri, Xingyuan Tang, Jason Tian, Kevin Gerber, Arul N. Dhas
  • Method of eliminating small bin defects in high throughput TEOS films
    Patent number: 7704894
    Abstract: This invention provides a high throughput PECVD process for depositing TEOS films in a multi-station sequential deposition chamber. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing small bin defects. The methods of the invention involve dedicating a first station for temperature soak while flowing purge gas. Stopping the flow of reactant gas and flowing the purge gas for station 1 eliminates TEOS condensation on a cold wafer surface and significantly reduces the number of defects in the film, particularly for short temperature soaks.
    Type: Grant
    Filed: November 20, 2006
    Date of Patent: April 27, 2010
    Assignee: Novellus Systems, Inc.
    Inventors: Jon Henri, Xingyuan Tang, Jason Tian, Kevin Gerber, Arul N. Dhas