Patents by Inventor Kevin Haberern

Kevin Haberern has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10529696
    Abstract: At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: January 7, 2020
    Assignee: Cree, Inc.
    Inventors: John Edmond, Matthew Donofrio, Jesse Reiherzer, Peter Scott Andrews, Joseph G. Clark, Kevin Haberern
  • Publication number: 20190273070
    Abstract: At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.
    Type: Application
    Filed: May 16, 2019
    Publication date: September 5, 2019
    Inventors: John Edmond, Matthew Donofrio, Jesse Reiherzer, Peter Scott Andrews, Joseph G. Clark, Kevin Haberern
  • Patent number: 10312224
    Abstract: At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.
    Type: Grant
    Filed: January 9, 2017
    Date of Patent: June 4, 2019
    Assignee: Cree, Inc.
    Inventors: John Edmond, Matthew Donofrio, Jesse Reiherzer, Peter Scott Andrews, Joseph G. Clark, Kevin Haberern
  • Publication number: 20170294417
    Abstract: At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.
    Type: Application
    Filed: January 5, 2017
    Publication date: October 12, 2017
    Inventors: John Edmond, Matthew Donofrio, Jesse Reiherzer, Peter Scott Andrews, Joseph G. Clark, Kevin Haberern
  • Publication number: 20170294418
    Abstract: At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.
    Type: Application
    Filed: January 9, 2017
    Publication date: October 12, 2017
    Inventors: John Edmond, Matthew Donofrio, Jesse Reiherzer, Peter Scott Andrews, Joseph G. Clark, Kevin Haberern
  • Publication number: 20170271561
    Abstract: An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide multiple LED dies that are joined to a single carrier die. The multiple LED dies on the single carrier die are connected in series and/or in parallel by interconnection in the LED dies and/or in the single carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area. Related devices and fabrication methods are described.
    Type: Application
    Filed: April 21, 2017
    Publication date: September 21, 2017
    Inventors: Michael John Bergmann, Kevin Haberern, Alan Wellford Dillon
  • Patent number: 9666764
    Abstract: An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide multiple LED dies that are joined to a single carrier die. The multiple LED dies on the single carrier die are connected in series and/or in parallel by interconnection in the LED dies and/or in the single carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area. Related devices and fabrication methods are described.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: May 30, 2017
    Assignee: Cree, Inc.
    Inventors: Michael John Bergmann, Kevin Haberern, Alan Wellford Dillon
  • Patent number: 9640737
    Abstract: Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 ?m is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount.
    Type: Grant
    Filed: January 31, 2011
    Date of Patent: May 2, 2017
    Assignee: Cree, Inc.
    Inventors: Matthew Donofrio, John Adam Edmond, James Ibbetson, David Todd Emerson, Michael John Bergmann, Kevin Haberern, Raymond Rosado, Jeffrey Carl Britt
  • Patent number: 9634197
    Abstract: An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide multiple LED dies that are joined to a single carrier die. The multiple LED dies on the single carrier die are connected in series and/or in parallel by interconnection in the LED dies and/or in the single carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area. Related devices and fabrication methods are described.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: April 25, 2017
    Assignee: Cree, Inc.
    Inventors: Michael John Bergmann, Kevin Haberern, Alan Wellford Dillon
  • Patent number: 9496458
    Abstract: A light emitting device includes an epitaxial region, an insulating layer on the epitaxial region, a bond pad on the insulating layer, and a crack reducing feature in the insulating layer. The crack reducing feature is configured to reduce the propagation of cracks in the insulating layer to an outside surface of the insulating layer. Related methods are also disclosed.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: November 15, 2016
    Assignee: Cree, Inc.
    Inventors: Matthew Donofrio, Michael Bergmann, Kevin Haberern, Kevin Schneider
  • Patent number: 9443903
    Abstract: A light emitting diode structure includes a diode region and a metal stack on the diode region. The metal stack includes a barrier layer on the diode region and a bonding layer on the barrier layer. The barrier layer is between the bonding layer and the diode region. The bonding layer includes gold, tin and nickel. A weight percentage of tin in the bonding layer is greater than 20 percent and a weight percentage of gold in the bonding layer is less than about 75 percent. A weight percentage of nickel in the bonding layer may be greater than 10 percent.
    Type: Grant
    Filed: January 30, 2012
    Date of Patent: September 13, 2016
    Assignee: Cree, Inc.
    Inventors: Michael John Bergmann, Christopher D. Williams, Kevin Shawne Schneider, Kevin Haberern, Matthew Donofrio
  • Patent number: 8896122
    Abstract: Schottky barrier semiconductor devices are provided including a wide bandgap semiconductor layer and a gate on the wide bandgap semiconductor layer. The gate includes a metal layer on the wide bandgap semiconductor layer including a nickel oxide (NiO) layer. Related methods of fabricating devices are also provided herein.
    Type: Grant
    Filed: May 12, 2010
    Date of Patent: November 25, 2014
    Assignee: Cree, Inc.
    Inventors: Van Mieczkowski, Helmut Hagleitner, Kevin Haberern
  • Publication number: 20140217435
    Abstract: A light emitting diode chip a support layer having a first face and a second face opposite the first face, a diode region on the first face of the support layer, and a bond pad on the second face of the support layer. The bond pad includes a gold-tin structure having a weight percentage of tin of 50% or more. The light emitting diode chip may include a plurality of active regions that are connected in electrical series on the light emitting diode chip.
    Type: Application
    Filed: April 14, 2014
    Publication date: August 7, 2014
    Applicant: Cree, Inc.
    Inventors: Michael John Bergmann, Christopher D. Williams, Kevin Shawne Schneider, Kevin Haberern, Matthew Donofrio
  • Patent number: 8772757
    Abstract: Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least than 4% are provided. Wall plug efficiencies may be at least 5% or at least 6%. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least than 2% are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least than 0.4% are provided. Light emitting devices and methods of fabricating light emitting devices having a peak output wavelength of not greater than 360 nm and an output power of at least 5 mW, having a peak output wavelength of 345 nm or less and an output power of at least 3 mW and/or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 ?A/?m2 are also provided.
    Type: Grant
    Filed: February 13, 2008
    Date of Patent: July 8, 2014
    Assignee: Cree, Inc.
    Inventors: David Todd Emerson, Michael John Bergmann, Amber Abare, Kevin Haberern
  • Patent number: 8759868
    Abstract: A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 ?. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.
    Type: Grant
    Filed: October 12, 2011
    Date of Patent: June 24, 2014
    Assignee: Cree, Inc.
    Inventors: Mark Raffetto, Jayesh Bharathan, Kevin Haberern, Michael Bergmann, David Emerson, James Ibbetson, Ting Li
  • Patent number: 8704240
    Abstract: A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad.
    Type: Grant
    Filed: April 4, 2013
    Date of Patent: April 22, 2014
    Assignee: Cree, Inc.
    Inventors: David Todd Emerson, Kevin Haberern, Michael John Bergmann, David B. Slater, Jr., Matthew Donofrio, John Edmond
  • Patent number: 8698184
    Abstract: A light emitting diode chip a support layer having a first face and a second face opposite the first face, a diode region on the first face of the support layer, and a bond pad on the second face of the support layer. The bond pad includes a gold-tin structure having a weight percentage of tin of 50% or more. The light emitting diode chip may include a plurality of active regions that are connected in electrical series on the light emitting diode chip.
    Type: Grant
    Filed: January 21, 2011
    Date of Patent: April 15, 2014
    Assignee: Cree, Inc.
    Inventors: Michael John Bergmann, Christopher D. Williams, Kevin Shawne Schneider, Kevin Haberern, Matthew Donofrio
  • Patent number: 8686460
    Abstract: A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 ?. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.
    Type: Grant
    Filed: October 12, 2011
    Date of Patent: April 1, 2014
    Assignee: Cree, Inc.
    Inventors: Mark Raffetto, Jayesh Bharathan, Kevin Haberern, Michael Bergmann, David Emerson, James Ibbetson, Ting Li
  • Patent number: 8669563
    Abstract: Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.
    Type: Grant
    Filed: June 2, 2009
    Date of Patent: March 11, 2014
    Assignee: Cree, Inc.
    Inventors: Kevin Haberern, Michael John Bergmann, Van Mieczkowski, David Todd Emerson
  • Publication number: 20130292639
    Abstract: A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad.
    Type: Application
    Filed: April 4, 2013
    Publication date: November 7, 2013
    Inventors: David Todd Emerson, Kevin Haberern, Michael John Bergmann, David B. Slater, JR., Matthew Donofrio, John Edmond