Patents by Inventor Kevin Hoopingarner

Kevin Hoopingarner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Diamond SOI with thin silicon nitride layer and related methods
    Patent number: 8815641
    Abstract: A method and structure for a semiconductor device including a thin nitride layer formed between a diamond SOI layer and device silicon layer to block diffusion of ions and improve lifetime of the device silicon.
    Type: Grant
    Filed: March 9, 2010
    Date of Patent: August 26, 2014
    Assignee: Soitec
    Inventors: Rick C. Jerome, Francois Hebert, Craig McLachlan, Kevin Hoopingarner
  • Methods of forming a semiconductor device
    Patent number: 8691670
    Abstract: A method and structure for a semiconductor device, the device including a handle wafer, a diamond layer formed directly on a front side of the handle wafer, and a thick oxide layer formed directly on a back side of the handle wafer, the oxide layer of a thickness to counteract tensile stresses of the diamond layer. Nitride layers are formed on outer surfaces of the diamond layer and thick oxide layer and a polysilicon is formed on outer surfaces of the nitride layers. A device wafer is bonded to the handle wafer to form the semiconductor device.
    Type: Grant
    Filed: December 18, 2012
    Date of Patent: April 8, 2014
    Assignee: Soitec
    Inventors: Rick Carlton Jerome, Francois Hebert, Craig McLachlan, Kevin Hoopingarner
  • Methods of forming a semiconductor device
    Patent number: 8476150
    Abstract: A method and structure for a semiconductor device, the device including a handle wafer, a diamond layer formed directly on a front side of the handle wafer, and a thick oxide layer formed directly on a back side of the handle wafer, the oxide of a thickness to counteract tensile stresses of the diamond layer. Nitride layers are formed on the outer surfaces of the diamond layer and thick oxide layer and a polysilicon is formed on outer surfaces of the nitride layers. A device wafer is bonded to the handle wafer to form the semiconductor device.
    Type: Grant
    Filed: September 22, 2010
    Date of Patent: July 2, 2013
    Assignee: Intersil Americas Inc.
    Inventors: Rick C. Jerome, Francois Hebert, Craig McLachlan, Kevin Hoopingarner
  • DIAMOND SOI WITH THIN SILICON NITRIDE LAYER
    Publication number: 20110186840
    Abstract: A method and structure for a semiconductor device including a thin nitride layer formed between a diamond SOI layer and device silicon layer to block diffusion of ions and improve lifetime of the device silicon.
    Type: Application
    Filed: March 9, 2010
    Publication date: August 4, 2011
    Inventors: Rick C. Jerome, Francois Hebert, Craig McLachlan, Kevin Hoopingarner
  • DIAMOND SOI WITH THIN SILICON NITRIDE LAYER
    Publication number: 20110186959
    Abstract: A method and structure for a semiconductor device, the device including a handle wafer, a diamond layer formed directly on a front side of the handle wafer, and a thick oxide layer formed directly on a back side of the handle wafer, the oxide of a thickness to counteract tensile stresses of the diamond layer. Nitride layers are formed on the outer surfaces of the diamond layer and thick oxide layer and a polysilicon is formed on outer surfaces of the nitride layers. A device wafer is bonded to the handle wafer to form the semiconductor device.
    Type: Application
    Filed: September 22, 2010
    Publication date: August 4, 2011
    Inventors: Rick C. Jerome, Francois Hebert, Craig McLachlan, Kevin Hoopingarner