Abstract: A method of processing a substrate is disclosed which includes depositing a layer in a processing chamber on a field region, a sidewall region, and a fill region of a feature of the substrate, wherein a hardness of a portion of the layer deposited on the sidewall region is lower than a hardness of a portion of the layer deposited on the field region, and lower than a hardness of a portion of the layer deposited on the fill region.

Abstract: The present disclosure relates to devices, methods, and systems or kits for detecting ATP in a sample. Particularly, the present disclosure relates to methods for removing ATP contamination from a sample and detecting intracellular ATP in the sample (e.g., as a proxy for detecting live cells in the sample).

Abstract: Exemplary semiconductor processing methods may include flowing deposition gases that may include a nitrogen-containing precursor, a silicon-containing precursor, and a carrier gas, into a substrate processing region of a substrate processing chamber. The flow rate ratio of the nitrogen-containing precursor to the silicon-containing precursor may be greater than or about 1:1. The methods may further include generating a deposition plasma from the deposition gases to form a silicon-and-nitrogen containing layer on a substrate in the substrate processing chamber. The silicon-and-nitrogen-containing layer may be treated with a treatment plasma, where the treatment plasma is formed from the carrier gas without the silicon-containing precursor. The flow rate of the carrier gas in the treatment plasma may be greater than a flow rate of the carrier gas in the deposition plasma.

Abstract: Exemplary processing methods may include forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber. The methods may include adjusting a variable capacitor within 20% of a resonance peak. The variable capacitor may be coupled with an electrode incorporated within a substrate support on which a substrate is seated. The methods may include depositing a material on the substrate.

Abstract: Exemplary semiconductor processing methods may include flowing deposition gases that may include a nitrogen-containing precursor, a silicon-containing precursor, and a carrier gas, into a substrate processing region of a substrate processing chamber. The flow rate ratio of the nitrogen-containing precursor to the silicon-containing precursor may be greater than or about 1:1. The methods may further include generating a deposition plasma from the deposition gases to form a silicon-and-nitrogen containing layer on a substrate in the substrate processing chamber. The silicon-and-nitrogen-containing layer may be treated with a treatment plasma, where the treatment plasma is formed from the carrier gas without the silicon-containing precursor. The flow rate of the carrier gas in the treatment plasma may be greater than a flow rate of the carrier gas in the deposition plasma.

Abstract: Exemplary processing methods may include forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber. The methods may include adjusting a variable capacitor within 20% of a resonance peak. The variable capacitor may be coupled with an electrode incorporated within a substrate support on which a substrate is seated. The methods may include depositing a material on the substrate.

Abstract: A measurement signal, the measurement signal indicative of a bias in a signal received via a communication channel, is generated. A detection signal, the detection signal indicative of presence of an unmodulated radio frequency (RF) carrier prior to a communication frame in the signal received via the communication channel, is generated using the measurement signal.

Abstract: A transceiver including: an antenna configured to a receive a first signal transmitted on a radio frequency channel; and a peak-to-sidelobe ratio determination unit configured to generate a second signal based on a ratio, in which the ratio is based on a peak value and a sidelobe value, and the peak value and the sidelobe value are determined based on a non-correlated version of the first signal. The transceiver further includes a carrier sense unit configured to, based on the second signal, generate a third signal indicating (i) whether the radio frequency channel is busy or (ii) whether the first signal is valid.

Abstract: A method and circuit for indicating signal faults in wireless transmissions, particularly, a carrier leak, includes an input to receive a wireless signal, a bias detector that detects a bias in a portion of the signal and outputs a bias value indicative of the bias, an evaluator configured to compare the bias value to at least one allowable transmission signal value, and output a signal when the bias value is outside the allowable transmission signal value, and an output, responsive to the evaluator, to indicate a carrier leakage in the wireless signal. A buffer may be provided between the input and the evaluator. The sensitivity of the circuit may be adjusted and a protocol determination may be made.

Abstract: Disclosed is a low hysteresis center offset comparator, comprising a first switch device, a differential amplifier, a second switch device, a general comparator, a first inverter and a second inverter. By means of the components, a hysteresis window with the low hysteresis center offset may be formed with respect to the inventive comparator with a width of a half-portion thereof formed equal to that of the other half-portion thereof corresponding to an offset voltage inherent in the differential amplifier.