Abstract: Method and apparatus for forming a semiconductor device. The method includes defining a plurality of rows in a semiconductor layer. Thereafter, on one or more of the plurality of rows, one or more bipolar junction devices are formed. Each of the bipolar junction devices has a first end region and a second end region. A quantity of a pre-amorphization ion is then implanted into at least one of the first end region and the second end region of a bipolar junction device for example. A silicide is formed in the semiconductor layer at the first end region and the second end region having implanted therein the quantity of the pre-amorphization ion. Additionally, laterally extending upper edges of the plurality of rows forming corners may be rounded prior to the implantation of the pre-amorphization.

Abstract: A thyristor-based semiconductor memory device may comprise at least a region thereof, e.g., a p-base region, having high ionization energy impurity, such as a dopant. This high ionization energy impurity within a base region may be operable to compensate for a gain-versus-temperature dependence of a constituent bipolar transistor of the thyristor element of a thyristor-based memory device. In particular embodiments, the high ionization energy impurity may include a donor and/or acceptor in silicon.

Abstract: A thyristor-based memory may comprise a thyristor accessible via an access transistor. A temperature dependent bias may be applied to at least one of a supporting substrate and an electrode capacitively-coupled to a base region of the thyristor. The voltage level of the adaptive bias may change with respect to temperature and may influence and/or compensate an inherent bipolar gain of the thyristor in accordance with the change in bias and may enhance its performance and/or reliability over a range of operating temperature. In a particular embodiment, the thyristor may be formed in a layer of silicon of an SOI substrate and the adaptive bias coupled to a supporting substrate of the SOI structure.

Abstract: In a method of fabricating a semiconductor memory device, a thyristor may be formed in a layer of semiconductor material. Carbon may be implanted and annealed in a base-emitter junction region for the thyristor to affect leakage characteristics. The density of the carbon and/or a bombardment energy and/or an anneal therefore may be selected to establish a low-voltage, leakage characteristic for the junction substantially greater than its leakage absent the carbon. In one embodiment, an anneal of the implanted carbon may be performed in common with an activation for other implant regions the semiconductor device.

Abstract: A fluorescent lamp end-of-life protection circuit in an illuminating electric appliance, includes a rectifying effect protection circuit for a lamp tube and an overvoltage protection circuit for the lamp tube, in which a circuitry of two series resistors and a capacitor in series is connected in parallel with the lamp tube. A cathode of a transient voltage suppresser is connected to one end of the lamp tube, its anode is connected to an anode of a diode, and a cathode of the diode is connected to a common node of two series resistors. One end of a trigger diode is connected to a common node of the capacitor and the resistor, and the other end thereof is connected to a gate terminal G of a triac, a first electrode and a second electrode of of which are connected to two ends of the lamp tube respectively.

Abstract: The present invention relates to a fluorescent lamp end-of-life protection circuit in an illuminating electric appliance. A need exists for a simple and all-sided protection circuit in view of hazard occurring at end of life of a lamp tube.

Abstract: A fluorescent lamp and ballast assembly is designed to thermally isolate a ballast circuit from the illuminated lamp and thereby reduce the heat surrounding the ballast circuit. The fluorescent lamp of the assembly is attached to a housing that reduces the heat transferred to the ballast circuit. The housing includes a bowl-shaped member, a shield, and a thermal isolation member connected between the bowl-shaped member and the shield. The bowl-shaped member is designed to hold and encircle the electronic ballast circuit, and the shield is designed to engage and secure the fluorescent lamp and attached cathode lead wires of the invention. The thermal isolation member is connected between the bowl-shaped member and the shield, and provides an air gap between the lamp and the ballast circuit.