Abstract: A linked hinge mechanism includes a first member, a second member, a hinge unit and a passive unit. The hinge unit is connected to the first member and the second member, wherein the first member is adapted to be rotated relative to the second member via the hinge unit. The passive unit is adapted to be moved by the movement of the hinge unit, wherein the passive unit is adapted to be rotated by the movement of the hinge unit in only a portion of the whole rotation range of the hinge unit.

Abstract: A linked hinge mechanism includes a first member, a second member, a hinge unit and a passive unit. The hinge unit is connected to the first member and the second member, wherein the first member is adapted to be rotated relative to the second member via the hinge unit. The passive unit is adapted to be moved by the movement of the hinge unit, wherein the passive unit is adapted to be rotated by the movement of the hinge unit in only a portion of the whole rotation range of the hinge unit.

Abstract: A circuit with electrostatic discharge protection is described. In one case, the circuit includes trigger device configured to protect a component connected to a node of the circuit during an electrostatic discharge event, the trigger device includes an isolation structure interposed between a gate oxide layer and an extended drain region. A portion of the extended drain region proximate the isolation structure is substantially metal-free.

Abstract: A circuit with electrostatic discharge protection is described. In one case, the circuit includes trigger device configured to protect a component connected to a node of the circuit during an electrostatic discharge event, the trigger device includes an isolation structure interposed between a gate oxide layer and an extended drain region. A portion of the extended drain region proximate the isolation structure is substantially metal-free.

Abstract: A circuit with electrostatic discharge protection is described. The circuit includes an output driver transistor with an extended drain contact region. The circuit also includes a distinct device configured to provide electrostatic discharge protection for the output driver transistor. The distinct device includes an electrostatic discharge protection transistor with an extended drain region.

Abstract: A semiconductor topography and a method for forming a drain extended metal oxide semiconductor (DEMOS) transistor is provided. The semiconductor topography includes at least a portion of an extended drain contact region formed within a well region and a plurality of dielectrically spaced extension regions interposed between the well region and a channel region underlying a gate structure of the topography. The channel region of a first conductivity type and the well region of a second conductivity type opposite of the first conductivity type. In addition, the plurality of dielectrically spaced extension regions and the extended drain contact region are of the second conductivity type. Each of the plurality of dielectrically spaced extension regions has a lower net concentration of electrically active impurities than the well region. Moreover, the extended drain contact region has a greater net concentration of electrically active impurities than the well region.

Abstract: This invention provides an actively controlled electrochemical cell and a smart battery containing such a cell with a programmed-timing activation capability. As a preferred embodiment, the cell includes (a) a cathode, an anode, a porous separator electronically insulating the cathode from the anode, and an electrolyte, wherein the anode is initially isolated from the electrolyte fluid prior to the first use of the cell; (b) an actuator in actuation relation to the electrolyte or the anode; and (c) a control device in control relation to the actuator for sending programmed signals to the actuator to activate the cell by allowing a desired amount of an active anode material at a time to be exposed to the electrolyte during the first use and/or successive uses of the cell. The cell or battery has an essentially infinite shell life and an exceptionally long operating life.