Patents by Inventor Kevin Jeng

Kevin Jeng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7960831
    Abstract: A ball-limiting metallurgy (BLM) stack is provided for an electrical device. The BLM stack resists tin migration toward the metallization of the device. A solder system is also provided that includes a eutectic-Pb solder on a substrate that is mated to a high-Pb solder, and that withstands higher temperature reflows and other higher temperature processes.
    Type: Grant
    Filed: August 17, 2007
    Date of Patent: June 14, 2011
    Assignee: Intel Corporation
    Inventors: Fay Hua, Albert T. Wu, Kevin Jeng, Krishna Seshan
  • Patent number: 7314819
    Abstract: A ball-limiting metallurgy (BLM) stack is provided for an electrical device. The BLM stack resists tin migration toward the metallization of the device. A solder system is also provided that includes a eutectic-Pb solder on a substrate that is mated to a high-Pb solder, and that withstands higher temperature reflows and other higher temperature processes.
    Type: Grant
    Filed: June 30, 2005
    Date of Patent: January 1, 2008
    Assignee: Intel Corporation
    Inventors: Fay Hua, Albert T. Wu, Kevin Jeng, Krishna Seshan
  • Publication number: 20070284741
    Abstract: A ball-limiting metallurgy (BLM) stack is provided for an electrical device. The BLM stack resists tin migration toward the metallization of the device. A solder system is also provided that includes a eutectic-Pb solder on a substrate that is mated to a high-Pb solder, and that withstands higher temperature reflows and other higher temperature processes.
    Type: Application
    Filed: August 17, 2007
    Publication date: December 13, 2007
    Inventors: Fay Hua, Albert Wu, Kevin Jeng, Krishna Seshan
  • Publication number: 20070004086
    Abstract: A ball-limiting metallurgy (BLM) stack is provided for an electrical device. The BLM stack resists tin migration toward the metallization of the device. A solder system is also provided that includes a eutectic-Pb solder on a substrate that is mated to a high-Pb solder, and that withstands higher temperature reflows and other higher temperature processes.
    Type: Application
    Filed: June 30, 2005
    Publication date: January 4, 2007
    Inventors: Fay Hua, Albert Wu, Kevin Jeng, Krishna Seshan
  • Publication number: 20060180945
    Abstract: In one embodiment, the present invention includes an apparatus having a metal layer with a pad disposed above a substrate; and a cap disposed above the metal layer having a first portion to provide for contact with a probe and a second portion to provide a bonding surface, and the cap is electrically coupled to the pad.
    Type: Application
    Filed: April 12, 2006
    Publication date: August 17, 2006
    Inventors: Krishna Seshan, Kevin Jeng, Haiping Dun
  • Patent number: 7056817
    Abstract: In one embodiment, the present invention includes an apparatus having a metal layer with a pad disposed above a substrate; and a cap disposed above the metal layer having a first portion to provide for contact with a probe and a second portion to provide a bonding surface, and the cap is electrically coupled to the pad.
    Type: Grant
    Filed: November 20, 2002
    Date of Patent: June 6, 2006
    Assignee: Intel Corporation
    Inventors: Krishna Seshan, Kevin Jeng, Haiping Dun
  • Publication number: 20040094836
    Abstract: In one embodiment, the present invention includes an apparatus having a metal layer with a pad disposed above a substrate; and a cap disposed above the metal layer having a first portion to provide for contact with a probe and a second portion to provide a bonding surface, and the cap is electrically coupled to the pad.
    Type: Application
    Filed: November 20, 2002
    Publication date: May 20, 2004
    Inventors: Krishna Seshan, Kevin Jeng, Haiping Dun
  • Patent number: 6265300
    Abstract: A bonding pad structure for use with compliant dielectric materials and a method for wire bonding is described in which a rigid layer is formed between the bonding pad and the compliant dielectric layer. The rigid layer increases the stiffness of the bonding structure such that an effective bond may be achieved by conventional ultrasonic and thermosonic bonding methods.
    Type: Grant
    Filed: November 18, 1993
    Date of Patent: July 24, 2001
    Assignee: Intel Corporation
    Inventors: Ameet S. Bhansali, Gay M. Samuelson, Venkatesan Murali, Michael J. Gasparek, Shou H. Chen, Nicholas P. Mencinger, Ching C. Lee, Kevin Jeng
  • Patent number: 5567981
    Abstract: A bonding pad structure for use with compliant dielectric materials and a method for wire bonding is described in which a rigid layer is formed between the bonding pad and the compliant dielectric layer. The rigid layer increases the stiffness of the bonding structure such that an effective bond may be achieved by conventional ultrasonic and thermosonic bonding methods.
    Type: Grant
    Filed: March 31, 1993
    Date of Patent: October 22, 1996
    Assignee: Intel Corporation
    Inventors: Ameet S. Bhansali, Gay M. Samuelson, Venkatesan Murali, Michael J. Gasparek, Shou H. Chen, Nicholas P. Mencinger, Ching C. Lee, Kevin Jeng