Patents by Inventor KEVIN K. ZHANG

KEVIN K. ZHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory controller and method for accessing a plurality of non-volatile memory arrays
    Patent number: 8799607
    Abstract: A memory controller (16) is used in a system (10) having a main memory (22) and a set of non-volatile memories (26, 32, 38, 44). Each non-volatile memory comprises a plurality of sectors (S0-S28), pages, or other memory unit types. A command is received to write data to the set of non-volatile memories (26, 32, 38, 44). Within the data is identified a grouping of the data that is for writing to sectors in the set of non-volatile memories in which each non-volatile memory of the set of non-volatile memories is to be written and each sector to be written has a corresponding location to be written in all of the other non-volatile memories. Corresponding locations are locations that are in the same location in the sequential order. The grouping of data is written into the set of the non-volatile memories to result in the writing in the non-volatile memories occurring contemporaneously.
    Type: Grant
    Filed: April 6, 2011
    Date of Patent: August 5, 2014
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Kevin K. Zhang, Xingyu Li
  • MEMORY CONTROLLER AND METHOD FOR ACCESSING A PLURALITY OF NON-VOLATILE MEMORY ARRAYS
    Publication number: 20120096215
    Abstract: A memory controller (16) is used in a system (10) having a main memory (22) and a set of non-volatile memories (26, 32, 38, 44). Each non-volatile memory comprises a plurality of sectors (S0-S28), pages, or other memory unit types. A command is received to write data to the set of non-volatile memories (26, 32, 38, 44). Within the data is identified a grouping of the data that is for writing to sectors in the set of non-volatile memories in which each non-volatile memory of the set of non-volatile memories is to be written and each sector to be written has a corresponding location to be written in all of the other non-volatile memories. Corresponding locations are locations that are in the same location in the sequential order. The grouping of data is written into the set of the non-volatile memories to result in the writing in the non-volatile memories occurring contemporaneously.
    Type: Application
    Filed: April 6, 2011
    Publication date: April 19, 2012
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: KEVIN K. ZHANG, XINGYU LI