Patents by Inventor Kevin Kashefi
Kevin Kashefi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11967523Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, alcohol, ester, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.Type: GrantFiled: October 11, 2021Date of Patent: April 23, 2024Assignee: Applied Materials, Inc.Inventors: Xiangjin Xie, Kevin Kashefi
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Patent number: 11955382Abstract: Methods and apparatus for forming a reverse selective etch stop layer are disclosed. Some embodiments of the disclosure provide interconnects with lower resistance than methods which utilize non-selective (e.g., blanket) etch stop layers. Some embodiments of the disclosure utilize reverse selective etch stop layers within a subtractive etch scheme. Some embodiments of the disclosure selectively deposit the etch stop layer by passivating the surface of the metal material.Type: GrantFiled: December 3, 2020Date of Patent: April 9, 2024Assignee: Applied Materials, Inc.Inventors: Kevin Kashefi, Alexander Jansen, Mehul Naik, He Ren, Lu Chen, Feng Chen
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Patent number: 11952655Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a physical vapor deposition processing chamber comprises a chamber body defining a processing volume, a substrate support disposed within the processing volume and comprising a substrate support surface configured to support a substrate, a power supply configured to energize a target for sputtering material toward the substrate, an electromagnet operably coupled to the chamber body and positioned to form electromagnetic filed lines through a sheath above the substrate during sputtering for directing sputtered material toward the substrate, and a controller operably coupled to the physical vapor deposition processing chamber for controlling the electromagnet based on a recipe comprising a pulsing schedule for pulsing the electromagnet during operation to control directionality of ions relative to a feature on the substrate.Type: GrantFiled: May 5, 2022Date of Patent: April 9, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Kevin Kashefi, Xiaodong Wang, Suhas Bangalore Umesh, Zheng Ju, Jiajie Cen
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Publication number: 20240038541Abstract: Methods for cleaning oxides from a substrate surface are performed without affecting low-k dielectric or carbon materials on the substrate. In some embodiments, the method may include performing a preclean process with a chlorine-based soak to remove oxides from a surface of a substrate in a back end of the line (BEOL) process and treating the surface of the substrate with a remote plasma with a hydrogen gas and at least one inert gas to remove residual chlorine residue from the surface of the substrate without damaging low-k dielectric material or carbon material on the substrate.Type: ApplicationFiled: October 6, 2022Publication date: February 1, 2024Inventors: Jiajie CEN, Xiaodong WANG, Kevin KASHEFI, Shi YOU
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Patent number: 11848229Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups, at least one functional group selected from amino groups, hydroxyl groups, ether linkages or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.Type: GrantFiled: October 21, 2022Date of Patent: December 19, 2023Assignee: Applied Materials, Inc.Inventors: Michael L. McSwiney, Bhaskar Jyoti Bhuyan, Mark Saly, Drew Phillips, Aaron Dangerfield, David Thompson, Kevin Kashefi, Xiangjin Xie
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Publication number: 20230313364Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a physical vapor deposition processing chamber comprises a chamber body defining a processing volume, a substrate support disposed within the processing volume and comprising a substrate support surface configured to support a substrate, a power supply configured to energize a target for sputtering material toward the substrate, an electromagnet operably coupled to the chamber body and positioned to form electromagnetic filed lines through a sheath above the substrate during sputtering for directing sputtered material toward the substrate, and a controller operably coupled to the physical vapor deposition processing chamber for controlling the electromagnet based on a recipe comprising a pulsing schedule for pulsing the electromagnet during operation to control directionality of ions relative to a feature on the substrate.Type: ApplicationFiled: May 5, 2022Publication date: October 5, 2023Inventors: Kevin KASHEFI, Xiaodong Wang, Suhas Bangalore Umesh, Zheng Ju, Jiajie Cen
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Patent number: 11776806Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.Type: GrantFiled: May 12, 2022Date of Patent: October 3, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Xi Cen, Yakuan Yao, Yiming Lai, Kai Wu, Avgerinos V. Gelatos, David T. Or, Kevin Kashefi, Yu Lei, Lin Dong, He Ren, Yi Xu, Mehul Naik, Hao Chen, Mang-Mang Ling
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Publication number: 20230253248Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM comprises a hydrocarbon having a formula of H—C?C—R, wherein R is a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms or a formula of R?C?CR?, wherein R? and R? independently include a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.Type: ApplicationFiled: March 8, 2023Publication date: August 10, 2023Applicant: Applied Materials, Inc.Inventors: Yang Zhou, Yong Jin Kim, Ge Qu, Zhiyuan Wu, Carmen Leal Cervantes, Feng Chen, Kevin Kashefi, Bhaskar Jyoti Bhuyan, Drew Phillips, Aaron Dangerfield
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Publication number: 20230212747Abstract: Methods and apparatus for self-assembled monolayer (SAM) deposition are provided herein. In some embodiments, an apparatus for self-assembled monolayer (SAM) deposition includes: a chamber enclosing a processing volume; a substrate support disposed in the chamber and configured to support a substrate in the processing volume; a gas distribution system coupled to the chamber and configured to distribute a process gas into the processing volume; a first SAM precursor source fluidly coupled to the gas distribution system to provide a first SAM precursor as a part of the process gas; and a second SAM precursor source fluidly coupled to the gas distribution system to provide a second SAM precursor, different than the first SAM precursor, as a part of the process gas, wherein the first and second SAM precursor sources are independently controllable to control a relative percentage of the first and second SAM precursors in the process gas with respect to each other.Type: ApplicationFiled: November 11, 2022Publication date: July 6, 2023Inventors: Kevin KASHEFI, Joel Minster HUSTON, Michael Lee MCSWINEY, Carmen LEAL CERVANTES, Yongjin KIM, Drew William PHILLIPS, Mark Joseph SALY
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Publication number: 20230197508Abstract: Methods for selectively depositing a self-assembled monolayer (SAM) on metallic surfaces are disclosed. Some embodiments of the disclosure utilize phenanthroline or a phenanthroline derivative to form the self-assembled monolayer. Some embodiments selective form the self-assembled monolayer on tungsten or molybdenum. Some embodiments utilize the self-assembled monolayer to selectively deposit on dielectric surfaces over metallic surfaces.Type: ApplicationFiled: December 17, 2021Publication date: June 22, 2023Applicant: Applied Materials, Inc.Inventors: Xiangjin Xie, Kevin Kashefi
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Publication number: 20230187204Abstract: Provided are methods for pre-cleaning a substrate. A substrate having tungsten oxide (WOx) thereon is soaked in tungsten fluoride (WF6), which reduces the tungsten oxide (WOx) to tungsten (W). Subsequently, the substrate is treated with hydrogen, e.g., plasma treatment or thermal treatment, to reduce the amount of fluorine present so that fluorine does not invade the underlying insulating layer.Type: ApplicationFiled: June 20, 2022Publication date: June 15, 2023Applicant: Applied Materials, Inc.Inventors: Xiaodong Wang, Kevin Kashefi, Rongjun Wang, Shi You, Keith T. Wong, Yuchen Liu, Ya-Hsi Hwang, Jean Lu
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Publication number: 20230126055Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups, at least one functional group selected from amino groups, hydroxyl groups, ether linkages or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.Type: ApplicationFiled: October 21, 2022Publication date: April 27, 2023Applicant: Applied Materials, Inc.Inventors: Michael L. McSwiney, Bhaskar Jyoti Bhuyan, Mark Saly, Drew Phillips, Aaron Dangerfield, David Thompson, Kevin Kashefi, Xiangjin Xie
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Publication number: 20230132200Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, hydroxyl, aldehyde, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.Type: ApplicationFiled: October 21, 2022Publication date: April 27, 2023Applicant: Applied Materials, Inc.Inventors: Michael L. McSwiney, Bhaskar Jyoti Bhuyan, Mark Saly, Drew Phillips, Aaron Dangerfield, David Thompson, Kevin Kashefi, Xiangjin Xie
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Publication number: 20230115211Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, alcohol, ester, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.Type: ApplicationFiled: October 11, 2021Publication date: April 13, 2023Applicant: Applied Materials, Inc.Inventors: Xiangjin Xie, Kevin Kashefi
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Publication number: 20230072614Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.Type: ApplicationFiled: September 3, 2021Publication date: March 9, 2023Applicant: Applied Materials, Inc.Inventors: Ge Qu, Zhiyuan Wu, Feng Chen, Carmen Leal Cervantes, Yong Jin Kim, Kevin Kashefi, Xianmin Tang
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Publication number: 20220275501Abstract: Methods of surface pretreatment during selective deposition are disclosed. One or more embodiment of the disclosure provides surface pretreatments which facilitate the removal of blocking layers. Some embodiments of the disclosure include a surface pretreatment comprising exposure of a substrate with a first surface and a second surface to modify the first surface, a blocking layer is deposited on the modified first surface, a film is selectively deposited on the second surface over the blocking layer, and the blocking layer is removed.Type: ApplicationFiled: February 28, 2022Publication date: September 1, 2022Applicant: Applied Materials, Inc.Inventors: Carmen Leal Cervantes, Yong Jin Kim, Kevin Kashefi
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Publication number: 20220270871Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.Type: ApplicationFiled: May 12, 2022Publication date: August 25, 2022Applicant: Applied Materials, Inc.Inventors: Xi Cen, Yakuan Yao, Yiming Lai, Kai Wu, Avgerinos V. Gelatos, David T. Or, Kevin Kashefi, Yu Lei, Lin Dong, He Ren, Yi Xu, Mehul Naik, Hao Chen, Mang-Mang Ling
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Patent number: 11380536Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.Type: GrantFiled: May 5, 2020Date of Patent: July 5, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Xi Cen, Yakuan Yao, Yiming Lai, Kai Wu, Avgerinos V. Gelatos, David T. Or, Kevin Kashefi, Yu Lei, Lin Dong, He Ren, Yi Xu, Mehul Naik, Hao Chen, Mang-Mang Ling
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Publication number: 20220181204Abstract: Methods and apparatus for forming a reverse selective etch stop layer are disclosed. Some embodiments of the disclosure provide interconnects with lower resistance than methods which utilize non-selective (e.g., blanket) etch stop layers. Some embodiments of the disclosure utilize reverse selective etch stop layers within a subtractive etch scheme. Some embodiments of the disclosure selectively deposit the etch stop layer by passivating the surface of the metal material.Type: ApplicationFiled: December 3, 2020Publication date: June 9, 2022Applicant: Applied Materials, Inc.Inventors: Kevin Kashefi, Alexander Jansen, Mehul Naik, He Ren, Lu Chen, Feng Chen
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Publication number: 20170062522Abstract: Provided are selector elements having snapback characteristics and non-volatile memory cells comprising such selector elements. To achieve its snapback characteristic, a selector element may include a dielectric layer comprising an alloy of two or more materials. In the same or other embodiments, the selector element may include a doped electrode, such carbon electrodes doped with silicon, germanium, and/or selenium. Concentrations of different materials forming an alloy may vary throughout the thickness of the dielectric layer. For example, the concentration of the first one alloy material may be higher in the center of the dielectric layer than near the interfaces of the dielectric layer with the electrodes. Some examples of this alloy material include germanium, indium, and aluminum. Examples of other materials in the same alloy include silicon, gallium, arsenic, and antimony. In some embodiments, the alloy is formed by three or more elements, such as indium gallium arsenic.Type: ApplicationFiled: August 12, 2016Publication date: March 2, 2017Applicant: Intermolecular, Inc.Inventors: Salil Mujumdar, Abhijit Pethe, Ashish Bodke, Kevin Kashefi