Abstract: Embodiments of the present invention provide systems, apparatus, and methods for a shielding and reflective optical polarizer. The polarizer includes a fine wire array of optically reflective and electrically conductive lines; and a coarse grid of optically reflective and electrically conductive lines. The fine wire array and the coarse grid are electrically coupled each other and to a grounding terminal. Numerous additional aspects are disclosed.

Abstract: Embodiments of the present invention provide systems, apparatus, and methods for a shielding and reflective optical polarizer. The polarizer includes a fine wire array of optically reflective and electrically conductive lines; and a coarse grid of optically reflective and electrically conductive lines. The fine wire array and the coarse grid are electrically coupled each other and to a grounding terminal. Numerous additional aspects are disclosed.

Abstract: Embodiments of the present disclosure generally relate to apparatuses for sampling bodily fluids and methods of fabrication thereof. The apparatus includes at least one adhesive patch, at least one bodily fluid port attached to the adhesive patch, and at least one bodily fluid storing capillary connected to the bodily fluid port and attached to the adhesive patch. The adhesive patch may be adhered to a subject's skin, the input port may then be connected to a source of bodily fluids and the one or more bodily fluid storing capillaries function to draw in the bodily fluid over time and store it for later analyzation. The one or more bodily fluid storing capillaries may be formed by imprint lithography on a plastic or glass substrate.

Abstract: Embodiments of the invention are directed to dollies for moving photovoltaic modules comprising an elongate base section with a first plurality of rollers and a support section movably coupled with the elongate base section such that the support section can be moved upwardly and downwardly to raise and lower a photovoltaic module. Kits including at least two dollies and methods of using the dollies and kits are also described.

Abstract: Methods and systems for improving the alignment between a previously formed feature and a subsequently formed feature are provided. An exemplary method can include laser scribing a workpiece (104, 550) having a previously formed first feature. The exemplary method includes imaging the workpiece (104, 550) with an imaging device (320, 420, 554, 640) so as to capture a plurality of positions of the first feature on the workpiece (104, 550) relative to the laser-scribing device (100). The exemplary method further includes using the captured positions to align output from the laser-scribing device (100) in order to form a second feature on the workpiece (104, 550) at a controlled distance from the first feature.

Abstract: Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1×1019 atoms/cm3 to about 1×1021 atoms/cm3, wherein the doped polycrystalline layer contains silicon or may contain germanium, carbon, or boron. The substrate may be heated to a temperature of about 800° C. or higher, such as about 1,000° C., during the rapid thermal anneal. Subsequently, the doped polycrystalline layer may be exposed to a laser anneal and heated to a temperature of about 1,000° C. or greater, such within a range from about 1,050° C. to about 1,400° C., for about 500 milliseconds or less, such as about 100 milliseconds or less.

Abstract: In certain embodiments a method of forming a multi-layer silicon film is provided. A substrate is placed in a process chamber. An amorphous silicon film is formed on the substrate by flowing into the process chamber a first process gas comprising a silicon source gas. A polysilicon film is formed on the amorphous silicon film by flowing into the deposition chamber a first process gas mix comprising a silicon source gas and a first dilution gas mix comprising H2 and an inert gas at a first temperature. In certain embodiments, the polysilicon film has a crystal orientation which is dominated by the <220> direction. In certain embodiments, the polysilicon film has a crystal orientation dominated by the <111> orientation. Structures comprising a lower amorphous silicon film and an upper polysilicon film having a random grain structure or a columnar grain structure are provided as well.

Abstract: In one embodiment, the invention generally provides a method for annealing a doped layer on a substrate including depositing a polycrystalline layer to a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer.

Abstract: A silicon germanium layer is deposited directly on a gate dielectric layer formed over a semiconductor material of a substrate. A mixture of germaine and disilane gases is preferably used to form the silicon germanium layer. Disilane, when used together with germaine, forms a uniform silicon germanium layer.