Abstract: A method for improving thickness uniformity and throughput of a carbon doped oxide deposition process is described. That method comprises removing pre-deposition steps in a deposition phase. Moreover, helium plasma is added to a pre-clean phase to eliminate the production of dummy wafers.

Abstract: Carbon doped oxide (CDO) deposition. One method of deposition includes providing a substrate and introducing oxygen to a carbon doped oxide precursor in the presence of the substrate. A carbon doped oxide film is formed on the substrate. In another method the substrate is placed on a susceptor of a chemical vapor deposition apparatus. A background gas is introduced along with the carbon doped oxide precursor and oxygen to form the carbon doped oxide film on the substrate.

Abstract: A method of converting a hydrophobic surface of a dielectric layer to a hydrophilic surface is described. That method comprises forming a dielectric layer on a substrate, then operating a PECVD reactor to generate a plasma that converts the surface of that layer from a hydrophobic surface to a hydrophilic surface. Also described is a method for making a semiconductor device that employs this technique.

Abstract: A method for carbon doped oxide (CDO) deposition is described. One method of deposition includes providing a substrate and introducing oxygen to a carbon doped oxide precursor in the presence of the substrate. A carbon doped oxide film is formed on the substrate. In another method the substrate is placed on a susceptor of a chemical vapor deposition apparatus. A background gas is introduced along with the carbon doped oxide precursor and oxygen to form the carbon doped oxide film on the substrate.

Abstract: A method for improving thickness uniformity and throughput of a carbon doped oxide deposition process is described. That method comprises removing pre-deposition steps in a deposition phase. Moreover, helium plasma is added to a pre-clean phase to eliminate the production of dummy wafers.

Abstract: A method of converting a hydrophobic surface of a dielectric layer to a hydrophilic surface is described. That method comprises forming a dielectric layer on a substrate, then operating a PECVD reactor to generate a plasma that converts the surface of that layer from a hydrophobic surface to a hydrophilic surface. Also described is a method for making a semiconductor device that employs this technique.

Abstract: Carbon doped oxide (CDO) deposition. One method of deposition includes providing a substrate and introducing oxygen to a carbon doped oxide precursor in the presence of the substrate. A carbon doped oxide film is formed on the substrate. In another method the substrate is placed on a susceptor of a chemical vapor deposition apparatus. A background gas is introduced along with the carbon doped oxide precursor and oxygen to form the carbon doped oxide film on the substrate.

Abstract: A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition apparatus a precursor gas that is selected from those having the formula (CH3)xSi(OCH3)4-x. Simultaneously, a background gas, oxygen and nitrogen are introduced into the chemical vapor deposition apparatus. That apparatus is then operated under conditions that cause a carbon doped oxide layer to form on the substrate.

Abstract: A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition apparatus a precursor gas that is selected from those having the formula (CH3)xSi(OCH3)4−x. Simultaneously, a background gas, oxygen and nitrogen are introduced into the chemical vapor deposition apparatus. That apparatus is then operated under conditions that cause a carbon doped oxide layer to form on the substrate.

Abstract: A rocket motor assembly is provided with multiple pintle nozzles and a controller for adjusting the pintle position in the nozzles to generate a thrust differential, while maintaining the combustion pressure at equilibrium pressure by maintaining the sum of the throat areas of all of the pintle nozzles constant, for example. In this manner, proportional thrust control and very high response times are achieved. The controller also includes a pressure correction circuit that senses any difference between the actual combustion chamber pressure and the selected equilibrium pressure upon which the thrust differential was based, converts that to an error value, and sends a command signal to each pintle actuator so that each pintle position is adjusted an equal amount to compensate for the sensed pressure difference and maintain the combustion chamber pressure at the selected equilibrium pressure.