Abstract: The invention provides treatment systems useful to treat microelectronic workpieces with one or more treatment fluids dispensed onto a workpieces from one or more nozzle assemblies. The nozzle assemblies are easily moveable and positionable to change distance and/or angle of nozzle orientation relative to the substrates being treated. The nozzle assemblies are easily and quickly adjustable on demand. Adjustment may be manual or automated. The present invention is based at least in part upon coupling the nozzle directly or indirectly to a flexible bellows. As the bellows is flexed up or down or tilted, etc., the nozzle is moved in a corresponding manner. For example, the nozzle outlet can be moved closer or further away from the surface of the substrate being processed. The angle of the nozzle assembly, and hence the angle of the spray dispensed from the nozzle, with respect to the substrate can also be altered if desired.

Abstract: The invention provides treatment systems useful to treat microelectronic workpieces with one or more treatment fluids dispensed onto a workpieces from one or more nozzle assemblies. The nozzle assemblies are easily moveable and positionable to change distance and/or angle of nozzle orientation relative to the substrates being treated. The nozzle assemblies are easily and quickly adjustable on demand. Adjustment may be manual or automated. The present invention is based at least in part upon coupling the nozzle directly or indirectly to a flexible bellows. As the bellows is flexed up or down or tilted, etc., the nozzle is moved in a corresponding manner. For example, the nozzle outlet can be moved closer or further away from the surface of the substrate being processed. The angle of the nozzle assembly, and hence the angle of the spray dispensed from the nozzle, with respect to the substrate can also be altered if desired.

Abstract: Embodiments of the invention provide a processing system and a method for processing with a heated etching solution. In one example, tight control over temperature and hydration level of an acidic etching solution is provided. According to one embodiment, the method includes forming the heated etching solution in a first circulation loop, providing the heated etching solution in the process chamber for treating a substrate, forming an additional heated etching solution in a second circulation loop, and supplying the additional heated etching solution to the first circulation loop. According to one embodiment, the processing system includes a process chamber for treating the substrate with the heated etching solution, a first circulation loop for providing the heated etching solution into the process chamber, and a second circulation loop for forming an additional heated etching solution and supplying the additional heated etching solution to the first circulation loop.

Abstract: A method and processing system are provided for independent temperature and hydration control for an etching solution used for treating a wafer in process chamber. The method includes circulating the etching solution in a circulation loop, maintaining the etching solution at a hydration setpoint by adding or removing water from the etching solution, maintaining the etching solution at a temperature setpoint that is below the boiling point of the etching solution in the circulation loop, and dispensing the etching solution into the process chamber for treating the wafer. In one embodiment, the dispensing includes dispensing the etching solution into a processing region proximate the wafer in the process chamber, introducing steam into an exterior region that is removed from the wafer in the process chamber, and treating the wafer with the etching solution and the steam.

Abstract: Methods are provided for processing a substrate in single substrate tool. In one embodiment, the method includes providing the substrate in the single substrate tool, applying a first processing fluid at a first temperature greater than 100° C. to a lower surface of the substrate to heat the substrate to approximately the first temperature, and applying a second processing fluid at a second temperature greater than 100° C. to an upper surface of the substrate.

Abstract: Embodiments of the invention are directed towards improving on-wafer process performance and processing at increased processing fluid/wafer temperature while maintaining good process performance. A method for processing a wafer in a process chamber is described where the process chamber includes a wafer holder having first and second sets of edge grippers for independently securing the wafer at the wafer edge during processing, treating the wafer with a first processing fluid while securing the wafer with the first set of edge grippers, but not with the second set of edge grippers, treating the wafer with a second processing fluid while securing the wafer with the first set of edge grippers, but not with the second set of edge grippers, and treating the wafer with a third processing fluid while securing the wafer with the second set of edge grippers, but not with the first set of edge grippers.

Abstract: Methods are provided for processing a substrate in single substrate tool. In one embodiment, the method includes providing the substrate in the single substrate tool, applying a first processing fluid at a first temperature greater than 100° C. to a lower surface of the substrate to heat the substrate to approximately the first temperature, and applying a second processing fluid at a second temperature greater than 100° C. to an upper surface of the substrate.

Abstract: Embodiments of the invention are directed towards improving on-wafer process performance and processing at increased processing fluid/wafer temperature while maintaining good process performance. A method for processing a wafer in a process chamber is described where the process chamber includes a wafer holder having first and second sets of edge grippers for independently securing the wafer at the wafer edge during processing, treating the wafer with a first processing fluid while securing the wafer with the first set of edge grippers, but not with the second set of edge grippers, treating the wafer with a second processing fluid while securing the wafer with the first set of edge grippers, but not with the second set of edge grippers, and treating the wafer with a third processing fluid while securing the wafer with the second set of edge grippers, but not with the first set of edge grippers.

Abstract: The present invention provides treatment strategies that reduce contamination on wafer surfaces that are treated with acid chemistries. The strategies are suitable for use with a wide variety of wafers, including those including sensitive microelectronic features or precursors thereof. These strategies involve a combination of neutralizing and rinsing strategies that quickly and effectively remove residual acid and acid by-products from both the front side of workpiece(s) as well as from other processing chamber surfaces that can be causes of contamination.

Abstract: A method and processing system are provided for independent temperature and hydration control for an etching solution used for treating a wafer in process chamber. The method includes circulating the etching solution in a circulation loop, maintaining the etching solution at a hydration setpoint by adding or removing water from the etching solution, maintaining the etching solution at a temperature setpoint that is below the boiling point of the etching solution in the circulation loop, and dispensing the etching solution into the process chamber for treating the wafer. In one embodiment, the dispensing includes dispensing the etching solution into a processing region proximate the wafer in the process chamber, introducing steam into an exterior region that is removed from the wafer in the process chamber, and treating the wafer with the etching solution and the steam.

Abstract: Embodiments of the invention provide a processing system and a method for processing with a heated etching solution. In one example, tight control over temperature and hydration level of an acidic etching solution is provided. According to one embodiment, the method includes forming the heated etching solution in a first circulation loop, providing the heated etching solution in the process chamber for treating a substrate, forming an additional heated etching solution in a second circulation loop, and supplying the additional heated etching solution to the first circulation loop. According to one embodiment, the processing system includes a process chamber for treating the substrate with the heated etching solution, a first circulation loop for providing the heated etching solution into the process chamber, and a second circulation loop for forming an additional heated etching solution and supplying the additional heated etching solution to the first circulation loop.

Abstract: The variability of immersion processes for treatment of semiconductor devices can be significantly lowered by initiating the termination of a treatment process according to a predetermined treatment termination protocol in a manner that takes into account the contribution of, in particular, the treatment that is carried out during the period of time in the treatment process in which the treatment process is being terminated. In a preferred embodiment, conditions that indicate the progress of the treatment on a real time basis are monitored, and the timing of the initiation of the termination process is additionally based on the calculated amount of treatment and treatment rate of the process in progress.

Abstract: A microelectronic substrate handling device comprising first and second support structures spaced from each other, the first support structure having a series of upper teeth defining a series of upper notches extending along a length of the first support structure and a series of lower teeth defining a series of lower notches extending along a length of the first support structure, each of the upper and lower notches opening toward the second support structure, wherein the upper and lower notches are offset from each other by a predetermined offset distance so that an edge of a microelectronic device will fit differently within the upper and lower notches of the first support structure when supported between the first and second support structures.

Abstract: A microelectronic substrate handling device comprising first and second support structures spaced from each other, the first support structure having a series of upper teeth defining a series of upper notches extending along a length of the first support structure and a series of lower teeth defining a series of lower notches extending along a length of the first support structure, each of the upper and lower notches opening toward the second support structure, wherein the upper and lower notches are offset from each other by a predetermined offset distance so that an edge of a microelectronic device will fit differently within the upper and lower notches of the first support structure when supported between the first and second support structures.

Abstract: The present invention provides immersion chemical processing systems capable of providing a desired blend of at least two chemicals to an immersion bath as well as methods of treating substrates immersively. The system is capable of producing a blend with one or more desired properties extremely accurately due at least in part to the capability of the system to monitor at least one property of the blend or at least one parameter of the immersion process and to utilize the information gathered to provide dynamic closed-loop feedback control of one or more process parameters known to relate to the same.

Abstract: A method for removing a material from a surface of an in-process, microelectronic substrate is provided. The method comprises providing a material-removing composition in the form of a liquid and flash vaporizing the liquid, thereby forming a material-removing vapor. The resulting vapor is then contacted with the material on the substrate. Preferred substrates include those used to make microelectronic articles such as semiconductor wafers and those used to make electric circuits, displays such as computer displays, optical storage media such as CD-ROM or DVD discs and other materials and products.

Abstract: Transport system that allows in-process microelectronic devices inside a chamber to be easily moved, regardless of whether the chamber is open or sealed. Advantageously, the source of in-process device motion is located outside of the chamber, while the motion is transferred to the wafer via a polymeric bellows. Inside the chamber, there are no parts of the system that rub against other componentry. Consequently, the system generates little, if any, contaminants.

Abstract: An apparatus having a processing chamber for processing a semiconductor wafer under evacuated conditions that is capable of transfer of the wafer from the processing chamber under conditions that are substantially equal to the pressure of an adjacent environment. In a preferred embodiment, the processing chamber is pressurized and vented with a source of high purity dry gas that is diffused into the chamber through a diffuser to pressurize the processing chamber after processing of the wafer is completed. A chamber equalization port between the processing chamber and the adjacent environment is opened to maintain the pressure within the chamber at or slightly above the pressure of the adjacent environment, and the chamber valve is then opened. The wafer can then be removed from the processing chamber, and a new wafer can be inserted. The chamber is then sealed by closing the chamber valve and the equalization port, and the atmosphere within the processing chamber is evacuated to a desired level.

Abstract: A process chamber within which a wafer can moved between a transfer position, an etch position and a liquid application position with a single motion system. The process chamber is a spin-type apparatus including a rotatable chuck driven by a spin motor combined with a movable pedestal. The pedestal is preferably movable along with the chuck and the spin motor with a wafer supporting portion of the chuck located in an internal chamber that is defined by a rinse bowl portion of a lower chamber assembly that is sealingly connected to the top cover member. The pedestal is displaceable between any and all of its positions as driven by a single linear motion driving device. In a first position, the pedestal itself can also form an effective seal with the top cover member to create an etching chamber. In a transfer position, the pedestal can be positioned to provide access through a wafer transfer gate, such as by a robot.

Abstract: A nozzle having a series of orifices along a longitudinal length of the nozzle for processing a substrate and which is rotatably adjustable. By the nozzle design of the present invention, liquid is properly distributed along the longitudinal length of the nozzle independently of the angle of the aerosol spray. This allows for the generation of a uniform aerosol stream that is independent of spray angle. The nozzle design of the present invention improves the uniform distribution of liquid within the nozzle, which in addition to providing a more uniform liquid pooling, also substantially eliminates temporal non-uniformities across the nozzle length. Moreover, the present invention is also directed to a nozzle that is translatable in the direction toward or away from the substrate to be processed or parallel to the substrate surface.