Abstract: An infrared detector (10) includes a substrate (16) having thereon an array of detector elements (21, 139). Each detector element has a membrane (41, 81, 91, 111, 141), which includes an amorphous silicon layer (51, 142) in contact with at least two electrodes (53, 56-57, 92, 112-113, 143-145) that are made of a titanium/aluminum alloy which absorbs infrared radiation. In order to obtain a desired temperature coefficient of resistance (TCR), the amorphous silicon layer may optionally be doped. The effective resistance between the electrodes is set to a desired value by appropriate configuration of the electrodes and the amorphous silicon layer. The membrane includes two outer layers (61-62, 146-147) made of an insulating material. Openings (149) may optionally be provided through the membrane.

Abstract: Individual processing cells are provided in close proximity to each detector element in an infrared detector array. Signals generated by the detectors in response to incident infrared radiation are converted to amplified voltages by their respective processing cells, with all of the cells sampling and holding their respective amplified signals simultaneously. The signals held by the various cells are then read out serially during the next cycle of alternating exposures and shadings by a rotating chopper. The amplified signals of all the cells are simultaneously reset at the beginning of each chopper cycle. The simultaneous sampling and holding allows all of the held pixel signals to represent equal periods of exposure or shading, while the local voltage conversion and signal amplification at each processing cell substantially improves the final signal-to-noise ratio.