Abstract: Lithographic methodologies involving, and apparatuses suitable for, inline circuit edits are described. In an example, an integrated circuit structure includes a first conductive line and a second conductive line in a first dielectric layer, the second conductive line laterally spaced apart from the first conductive line. The integrated circuit structure also includes a first conductive via and a second conductive via in a second dielectric layer, the second dielectric layer over the first dielectric layer, the second conductive via laterally spaced apart from the first conductive via, the first conductive via vertically over and connected to the first conductive line, and the second conductive via vertically over but separated from the second conductive line.

Abstract: Lithographic methodologies involving, and apparatuses suitable for, inline circuit edits are described. In an example, an integrated circuit structure includes a plurality of conductive structures along corresponding ones of a plurality of line tracks along a first direction. The integrated circuit structure also includes a white space track included within the plurality of line tracks, the white space track having a width along a second direction greater than a width of an individual one of the plurality of line tracks, the second direction orthogonal to the first direction. A conductive structure is along the white space track.

Abstract: Lithographic methodologies involving, and apparatuses suitable for, inline circuit edits are described. In an example, an integrated circuit structure includes a plurality of conductive lines in a dielectric layer, individual ones of the plurality of conductive lines along a direction and spaced at a same interval. A conductive structure is in the dielectric layer, the conductive structure laterally between but not in contact with a pair of the plurality of conductive lines.

Abstract: An interconnect structure is disclosed. The interconnect structure includes a first line of interconnects and a second line of interconnects. The first line of interconnects and the second line of interconnects are staggered. The individual interconnects of the second line of interconnects are laterally offset from individual interconnects of the first line of interconnects. A dielectric material is adjacent to at least a portion of the individual interconnects of at least one of the first line of interconnects and the second line of interconnects.

Abstract: Interconnect structures are disclosed. An example includes conductive traces over a first dielectric layer, dielectric helmet structures over top surfaces of the conductive traces, and a second dielectric layer over the helmet structures. Spaces between adjacent ones of conductive traces are devoid of material. A bottom surface of the second dielectric layer is between top surfaces of the dielectric structures and bottom surfaces of the helmet structures, or co-planar with the top surface of the helmet structures, but the airgap extends above tops of the conductive traces. Another example includes a dielectric adjacent to upper sections but not lower sections of conductive traces, so as to provide airgaps between adjacent lower sections. Alternatively, a first dielectric material is adjacent the upper sections and a second compositionally different dielectric material is adjacent the lower sections. In either case, the sidewalls of the upper sections of the interconnect features may include scalloping.

Abstract: Embodiments of the disclosure are in the field of integrated circuit structure fabrication. In an example, an integrated circuit structure includes a plurality of conductive interconnect lines above a substrate, individual ones of the conductive interconnect lines having a top and sidewalls. An etch stop layer is on the top and along an entirety of the sidewalls of the individual ones of the conductive interconnect lines.

Abstract: Via connections for staggered interconnect lines are disclosed. An interconnect structure includes a first plurality of interconnects and a second plurality of interconnects, wherein the first plurality of interconnects and the second plurality of interconnects are staggered such that individual interconnects of the second plurality of interconnects are laterally offset from individual interconnects of the first plurality of interconnects. The interconnect structure also includes a via coupling an individual interconnect of the first plurality of interconnects to an individual interconnect of the second plurality of interconnects.

Abstract: Embodiments disclosed herein include a semiconductor device with interconnects with non-uniform heights. In an embodiment, the semiconductor device comprises a semiconductor substrate, and a back end of line (BEOL) stack over the semiconductor substrate. In an embodiment, the BEOL stack comprises first interconnects and second interconnects in an interconnect layer of the BEOL stack. In an embodiment, the first interconnects have a first height and the second interconnects have a second height that is different than the first height.

Abstract: Interconnect structures are disclosed. An example includes conductive traces over a first dielectric layer, dielectric helmet structures over top surfaces of the conductive traces, and a second dielectric layer over the helmet structures. Spaces between adjacent ones of conductive traces are devoid of material. A bottom surface of the second dielectric layer is between top surfaces of the dielectric structures and bottom surfaces of the helmet structures, or co-planar with the top surface of the helmet structures, but the airgap extends above tops of the conductive traces. Another example includes a dielectric adjacent to upper sections but not lower sections of conductive traces, so as to provide airgaps between adjacent lower sections. Alternatively, a first dielectric material is adjacent the upper sections and a second compositionally different dielectric material is adjacent the lower sections. In either case, the sidewalls of the upper sections of the interconnect features may include scalloping.

Abstract: Embodiments disclosed herein include interconnect layers that include non-uniform interconnect heights and methods of forming such devices. In an embodiment, an interconnect layer comprises an interlayer dielectric (ILD), a first interconnect disposed in the ILD, wherein the first interconnect has a first height, and a second interconnect disposed in the ILD, wherein the second interconnect has a second height that is different than the first height.

Abstract: An interconnect structure is disclosed. The interconnect structure includes a first line of interconnects and a second line of interconnects. The first line of interconnects and the second line of interconnects are staggered. The individual interconnects of the second line of interconnects are laterally offset from individual interconnects of the first line of interconnects. A dielectric material is adjacent to at least a portion of the individual interconnects of at least one of the first line of interconnects and the second line of interconnects.

Abstract: A conductive layer is deposited into a trench in a sacrificial layer on a substrate. An etch stop layer is deposited over the conductive layer. The sacrificial layer is removed to form a gap. In one embodiment, a beam is over a substrate. An interconnect is on the beam. An etch stop layer is over the beam. A gap is between the beam and the etch stop layer.

Abstract: A conductive layer is deposited into a trench in a sacrificial layer on a substrate. An etch stop layer is deposited over the conductive layer. The sacrificial layer is removed to form a gap. In one embodiment, a beam is over a substrate. An interconnect is on the beam. An etch stop layer is over the beam. A gap is between the beam and the etch stop layer.