Abstract: Embodiments described herein provide a method of large area lithography to decrease widths of portions written into photoresists. One embodiment of the method includes projecting an initial light beam of a plurality of light beams at a minimum wavelength to a mask in a propagation direction of the plurality of light beams. The mask has a plurality of dispersive elements. A wavelength of each light beam of the plurality of light beams is increased until a final light beam of the plurality of light beams is projected at a maximum wavelength. The plurality of dispersive elements of the mask diffract the plurality of light beams into order mode beams to produce an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern having a plurality of intensity peaks writes a plurality of portions in the photoresist layer.

Abstract: Embodiments of the present disclosure generally relate to imprint lithography, and more particularly to methods and apparatus for creating a large area imprint without a seam. Methods disclosed herein generally include separating the curing time of the features in a stamp or product from the curing time of the seam and the periphery. The seam and periphery can be cured first or the seam and periphery can be cured last. Additionally, the seam curing operations can be performed on the master, on the stamp, or on the final product.

Abstract: Methods and apparatuses for processing lithium batteries with a laser source having a wide process window, high efficiency, and low cost are provided. The laser source is adapted to achieve high average power and a high frequency of picosecond pulses. The laser source can produce a line-shaped beam either in a fixed position or in scanning mode. The system can be operated in a dry room or vacuum environment. The system can include a debris removal mechanism, for example, inert gas flow, to the processing site to remove debris produced during the patterning process.

Abstract: Embodiments of the present disclosure generally relate to pattern replication, imprint lithography, and more particularly to methods and apparatuses for creating a large area imprint without a seam. Methods disclosed herein generally include filling seams between pairs of masters with a filler material such that the seams are flush with a surface of the masters having a plurality of features disposed thereon.

Abstract: Embodiments described herein provide a method of large area lithography to decrease widths of portions written into photoresists. One embodiment of the method includes projecting an initial light beam of a plurality of light beams at a minimum wavelength to a mask in a propagation direction of the plurality of light beams. The mask has a plurality of dispersive elements. A wavelength of each light beam of the plurality of light beams is increased until a final light beam of the plurality of light beams is projected at a maximum wavelength. The plurality of dispersive elements of the mask diffract the plurality of light beams into order mode beams to produce an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern having a plurality of intensity peaks writes a plurality of portions in the photoresist layer.

Abstract: Embodiments of the present disclosure generally relate to imprint lithography, and more particularly to methods and apparatus for creating a large area imprint without a seam. Methods disclosed herein generally include separating the curing time of the features in a stamp or product from the curing time of the seam and the periphery. The seam and periphery can be cured first or the seam and periphery can be cured last. Additionally, the seam curing operations can be performed on the master, on the stamp, or on the final product.

Abstract: Embodiments described herein provide a method of large area lithography to decrease widths of portions written into photoresists. One embodiment of the method includes projecting an initial light beam of a plurality of light beams at a minimum wavelength to a mask in a propagation direction of the plurality of light beams. The mask has a plurality of dispersive elements. A wavelength of each light beam of the plurality of light beams is increased until a final light beam of the plurality of light beams is projected at a maximum wavelength. The plurality of dispersive elements of the mask diffract the plurality of light beams into order mode beams to produce an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern having a plurality of intensity peaks writes a plurality of portions in the photoresist layer.

Abstract: Embodiments of the present disclosure generally relate to imprint lithography, and more particularly to methods and apparatus for creating a large area imprint without a seam. Methods disclosed herein generally include separating the curing time of the features in a stamp or product from the curing time of the seam and the periphery. The seam and periphery can be cured first or the seam and periphery can be cured last. Additionally, the seam curing operations can be performed on the master, on the stamp, or on the final product.

Abstract: Embodiments described herein provide a method of large area lithography to decrease widths of portions written into photoresists. One embodiment of the method includes projecting an initial light beam of a plurality of light beams at a minimum wavelength to a mask in a propagation direction of the plurality of light beams. The mask has a plurality of dispersive elements. A wavelength of each light beam of the plurality of light beams is increased until a final light beam of the plurality of light beams is projected at a maximum wavelength. The plurality of dispersive elements of the mask diffract the plurality of light beams into order mode beams to produce an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern having a plurality of intensity peaks writes a plurality of portions in the photoresist layer.

Abstract: Embodiments of the present disclosure generally relate to imprint lithography, and more particularly to methods and apparatus for creating a large area imprint without a seam. Methods disclosed herein generally include separating the curing time of the features in a stamp or product from the curing time of the seam and the periphery. The seam and periphery can be cured first or the seam and periphery can be cured last. Additionally, the seam curing operations can be performed on the master, on the stamp, or on the final product.

Abstract: Embodiments of the present invention generally relate to a process and apparatus for monitoring and controlling the accuracy and spacing of isolation trenches scribed in a solar module during the fabrication process. In one embodiment, encoder marks, and optionally, encoder lines are scribed into a front contact layer of a solar cell device substrate. The encoder marks and lines may then be used via one or more subsequent scribe modules to control the pulsing and positioning of a laser device to provide accurate and consistent trench lines in various layers of the completed solar module.

Abstract: Embodiments of the present invention generally relate to a system used to form solar cell devices using processing modules adapted to perform one or more processes in the formation of the solar cell devices. In one embodiment, the system is adapted to form thin film solar cell devices by accepting a large unprocessed substrate and performing multiple deposition, material removal, cleaning, bonding, testing, and sectioning processes to form one or more complete, functional, and tested solar cell devices in custom sizes and/or shapes that can then be shipped to an end user for installation in a desired location to generate electricity. In one embodiment, the system is adapted to form one or more BIPV panels in custom sizes and/or shapes from a single large substrate for shipment to an end user.

Abstract: Semi-transparent thin-film photovoltaic modules and methods of making the same are described. A thin-film photovoltaic module comprises a transparent conductive oxide layer, a photoabsorptive layer and a reflective back contact layer. A series of scribes is created between application of each layer with some scribes rendering transparent portions of the final module.