Patents by Inventor Kevin Limkrailassiri

Kevin Limkrailassiri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of manufacturing the same
    Patent number: 9284186
    Abstract: After a TEOS oxide film is formed on the surface of a semiconductor device, a PSG film and an SiN film, which have air permeability, are formed on the surface of the TEOS oxide film. Thereafter, a Poly-Si film is formed thereon. A sacrifice layer is removed by a gaseous HF that passes through the PSG film, the SiN film, and the Poly-Si film, and then, the uppermost layer is covered with a Poly-Si/SiC film. A chip scale package having a thin-film hollow-seal structure can be realized on the semiconductor element.
    Type: Grant
    Filed: September 24, 2012
    Date of Patent: March 15, 2016
    Assignees: Kabushiki Kaisha Toshiba, The Regents of the University of California
    Inventors: Hiroshi Yamada, Hideyuki Funaki, Kazuhiro Suzuki, Kazuhiko Itaya, Armon Mahajerin, Kevin Limkrailassiri, Liwei Lin
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20140084392
    Abstract: After a TEOS oxide film is formed on the surface of a semiconductor device, a PSG film and an SiN film, which have air permeability, are formed on the surface of the TEOS oxide film. Thereafter, a Poly-Si film is formed thereon. A sacrifice layer is removed by a gaseous HF that passes through the PSG film, the SiN film, and the Poly-Si film, and then, the uppermost layer is covered with a Poly-Si/SiC film. A chip scale package having a thin-film hollow-seal structure can be realized on the semiconductor element.
    Type: Application
    Filed: September 24, 2012
    Publication date: March 27, 2014
    Inventors: Hiroshi Yamada, Hideyuki Funaki, Kazuhiro Suzuki, Kazuhiko Itaya, Armon Mahajerin, Kevin Limkrailassiri, Liwei Lin