Abstract: A method for etching on a semiconductors at the back end of line using reactive ion etching. The method comprises reduced pressure atmosphere and a mixture of gases at a specific flow rate ratio during plasma generation and etching. Plasma generation is induced by a source radio frequency and anisotropic etch performance is induced by a second bias radio frequency.

Abstract: A method, a system and a computer program product suitable for use in a manufacturing environment comprising a multiplicity of nominally identical independent tools. A computing device generates a multi dimensional array of process trace data derived from at least one of the independent tools, wherein, the array includes data representing a first dimension comprising a list of steps in a manufacturing recipe and data representing a second dimension comprising a list of a set of sensors generating measurements from at least one of the independent tools. The computing device conducts an analysis on at least one preselected subset of the multi dimensional array for the purpose of evaluating at least one operating characteristic of at least one of the independent tools. The computing device presents results of the analysis via a set of hierarchically linked and browseable graphics.

Abstract: A method, a system and a computer program product suitable for use in a manufacturing environment comprising a multiplicity of nominally identical independent tools. A computing device generates a multi dimensional array of process trace data derived from at least one of the independent tools, wherein, the array includes data representing a first dimension comprising a list of steps in a manufacturing recipe and data representing a second dimension comprising a list of a set of sensors generating measurements from at least one of the independent tools. The computing device conducts an analysis on at least one preselected subset of the multi dimensional array for the purpose of evaluating at least one operating characteristic of at least one of the independent tools. The computing device presents results of the analysis via a set of hierarchically linked and browseable graphics.

Abstract: A method and system for evaluating a performance of a semiconductor manufacturing tool while manufacturing microelectronic devices are disclosed. At least one report is generated based on executions of at least one statistical test. The report includes at least one heat map having rows that correspond to sensors, columns that correspond to trace data obtained during recipe steps, and cells at the intersection of the rows and the columns. At least one sensor in the tool obtains trace data of a recipe step while manufacturing at least one microelectronic device. A computing device analyzes the obtained trace data to determine a level of operational significance found in the data and assigns a score to the trace data that indicates a level of operational significance. Then, the computing device places the score in a corresponding cell of the heat map. A user uses the cell for evaluating the tool performance.

Abstract: A method and system for evaluating a performance of a semiconductor manufacturing tool while manufacturing microelectronic devices are disclosed. At least one report is generated based on executions of at least one statistical test. The report includes at least one heat map having rows that correspond to sensors, columns that correspond to trace data obtained during recipe steps, and cells at the intersection of the rows and the columns. At least one sensor in the tool obtains trace data of a recipe step while manufacturing at least one microelectronic device. A computing device analyzes the obtained trace data to determine a level of operational significance found in the data and assigns a score to the trace data that indicates a level of operational significance. Then, the computing device places the score in a corresponding cell of the heat map. A user uses the cell for evaluating the tool performance.

Abstract: A method for etching on a semiconductors at the back end of line using reactive ion etching. The method comprises reduced pressure atmosphere and a mixture of gases at a specific flow rate ratio during plasma generation and etching. Plasma generation is induced by a source radio frequency and anisotropic etch performance is induced by a second bias radio frequency.

Abstract: A method for etching on a semiconductors at the back end of line using reactive ion etching. The method comprises reduced pressure atmosphere and a mixture of gases at a specific flow rate ratio during plasma generation and etching. Plasma generation is induced by a source radio frequency and anisotropic etch performance is induced by a second bias radio frequency.

Abstract: A method for etching on a semiconductors at the back end of line using reactive ion etching. The method comprises reduced pressure atmosphere and a mixture of gases at a specific flow rate ratio during plasma generation and etching. Plasma generation is induced by a source radio frequency and anisotropic etch performance is induced by a second bias radio frequency.