Abstract: According to some embodiments, an electronics based physical gas sensor includes a semiconductor layer, and at least one contact is electrically coupled to the semiconductor layer. A catalytic gate, having a property that changes when the gate is exposed to an analyte, and a variable bias from a voltage source are also provided.

Abstract: According to some embodiments, an electronics based physical gas sensor includes a semiconductor layer, and at least one contact is electrically coupled to the semiconductor layer. A catalytic gate, having a property that changes when the gate is exposed to an analyte, and a variable bias from a voltage source are also provided.

Abstract: A device including a first layer having a first material, and the first material having a hexagonal crystal lattice structure defining a first bandgap and one or more non-polar planes is provided. The device further includes a second layer that is adjacent to the first layer having a second material. The second material may have a second bandgap that is different than the first bandgap. The second layer may have a first surface and a second surface, and a portion of the second layer first surface may be coupled to a surface of the first layer to form a two dimensional charge gas and to define a first region. Further, the device includes a conductive layer that is interposed between the first region and a second region that is spaced from the first region, where the device is normally-off if no electrical potential is applied to the conductive layer, and an electrical potential applied to the conductive layer allows electrical communication from the first region to the second region.

Abstract: A SiC semiconductor device and method of fabricating a SiC semiconductor device is provided. The method includes forming a source region and a drain region over a silicon carbide layer which is activated at a high temperature. A gate oxide layer is formed over the silicon carbide layer and is ion-implanted with an atomic species. In another method the gate oxide layer has a thickness of less than about 200 nm.

Abstract: A vertical heterostructure field effect transistor including a first layer having a first material, and the first material having a hexagonal crystal lattice structure defining a first bandgap and one or more non-polar planes is provided. The transistor further includes a second layer that is adjacent to the first layer having a second material. Further, the second layer has a first surface and a second surface, and a portion of the second layer first surface is coupled to the surface of the first layer to form a two dimensional charge gas and to define a first region. The second material may have a second bandgap that is different than the first bandgap.

Abstract: According to some embodiments, an electronics based physical gas sensor includes a semiconductor layer, and at least one contact is electrically coupled to the semiconductor layer. A catalytic gate, having a property that changes when the gate is exposed to an analyte, and a variable bias from a voltage source are also provided.

Abstract: An aspect of the present invention is directed to an avalanche photodiode (APD) device for use in oil well drilling applications in harsh, down-hole environments where shock levels are near 250 gravitational acceleration (G) and/or temperatures approach or exceed 150° C. Another aspect of the present invention is directed to an APD device fabricated using SiC materials. Another aspect of the present invention is directed to an APD device fabricated using GaN materials.

Abstract: An ultraviolet sensor monitors an effectiveness of ultraviolet lamps used in sterilization systems. The sensor includes an ultraviolet photodetector and a filter cooperating therewith configured for detecting light at wavelengths between 200-300 nm. A purification system for air or water utilizes the sensor in conjunction with an ultraviolet lamp directing ultraviolet light toward the air or water.