Patents by Inventor Kevin Menguelti

Kevin Menguelti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming local nano/micro size structures of anodized metal
    Patent number: 10273592
    Abstract: The invention presents a method for producing micro- or nano-structures of an anodized valve metal on a substrate. The method allows for accurate production of the structures, involves a small number of steps and is highly repeatable.
    Type: Grant
    Filed: May 12, 2016
    Date of Patent: April 30, 2019
    Assignee: Luxembourg Institute of Science and Technology (LIST)
    Inventors: Guillaume Lamblin, Damien Lenoble, Kevin Menguelti, Vincent Rogé
  • Method of Forming Local Nano/Micro Size Structures of Anodized Metal
    Publication number: 20180179657
    Abstract: The invention presents a method for producing micro- or nano-structures of an anodized valve metal on a substrate. The method allows for accurate production of the structures, involves a small number of steps and is highly repeatable.
    Type: Application
    Filed: May 12, 2016
    Publication date: June 28, 2018
    Applicant: Luxembourg Institute of Science and Technology ( LIST)
    Inventors: Guillaume Lamblin, Damien Lenoble, Kevin Menguelti, Vincent Rogé
  • Method of patterning of magnetic tunnel junctions
    Patent number: 8546263
    Abstract: Embodiments of the invention generally relate to methods for fabricating devices on semiconductor substrates. More specifically, embodiments of the invention relate to methods of patterning magnetic materials. Certain embodiments described herein use a reducing chemistry containing a hydrogen gas or hydrogen containing gas with an optional dilution gas at temperatures ranging from 20 to 300 degrees Celsius at a substrate bias less than 1,000 DC voltage to reduce the amount of sputtering and redeposition. Exemplary hydrogen containing gases which may be used with the embodiments described herein include NH3, H2, CH4, C2H4, SiH4, and H2S. It has been found that patterning a magnetic tunnel junction with an oxidizer-free gas mixture comprising hydrogen maintains the integrity of the magnetic tunnel junction without producing harmful conductive residue.
    Type: Grant
    Filed: April 27, 2011
    Date of Patent: October 1, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Olivier Joubert, Benjamin Schwarz, Jérémy Gilbert Maurice Pereira, Kevin Menguelti, Erwine Maude Pargon, Maxime Darnon
  • METHOD OF PATTERNING OF MAGNETIC TUNNEL JUNCTIONS
    Publication number: 20120276657
    Abstract: Embodiments of the invention generally relate to methods for fabricating devices on semiconductor substrates. More specifically, embodiments of the invention relate to methods of patterning magnetic materials. Certain embodiments described herein use a reducing chemistry containing a hydrogen gas or hydrogen containing gas with an optional dilution gas at temperatures ranging from 20 to 300 degrees Celsius at a substrate bias less than 1,000 DC voltage to reduce the amount of sputtering and redeposition. Exemplary hydrogen containing gases which may be used with the embodiments described herein include NH3, H2, CH4, C2H4, SiH4, and H2S. It has been found that patterning a magnetic tunnel junction with an oxidizer-free gas mixture comprising hydrogen maintains the integrity of the magnetic tunnel junction without producing harmful conductive residue.
    Type: Application
    Filed: April 27, 2011
    Publication date: November 1, 2012
    Inventors: Olivier Joubert, Benjamin Schwarz, Jérémy Gilbert Maurice Pereira, Kevin Menguelti, Erwine Maude Pargon, Maxime Darnon