Patents by Inventor Kevin Michael Conley

Kevin Michael Conley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Rewritable multibit non-volatile memory with soft decode optimization
    Patent number: 9946468
    Abstract: A non-volatile memory system including multi-level storage optimized for ramp sensing and soft decoding is provided. Sensing is performed at a higher bit resolution than an original user data encoding to improve the accuracy of reading state information from non-volatile storage elements. Higher resolution state information is used for decoding the original user data to improve read performance through improved error handling. Ramp sensing is utilized to determine state information by applying a continuous input scanning sense voltage that spans a range of read compare points. Full sequence programming is enabled as is interleaved coding of the user data over all of the data bit sets associated with the storage elements.
    Type: Grant
    Filed: March 15, 2017
    Date of Patent: April 17, 2018
    Assignee: SanDisk Technologies LLC
    Inventors: Kevin Michael Conley, Raul-Adrian Cernea, Eran Sharon, Idan Alrod
  • Rewritable Multibit Non-Volatile Memory With Soft Decode Optimization
    Publication number: 20170185299
    Abstract: A non-volatile memory system including multi-level storage optimized for ramp sensing and soft decoding is provided. Sensing is performed at a higher bit resolution than an original user data encoding to improve the accuracy of reading state information from non-volatile storage elements. Higher resolution state information is used for decoding the original user data to improve read performance through improved error handling. Ramp sensing is utilized to determine state information by applying a continuous input scanning sense voltage that spans a range of read compare points. Full sequence programming is enabled as is interleaved coding of the user data over all of the data bit sets associated with the storage elements.
    Type: Application
    Filed: March 15, 2017
    Publication date: June 29, 2017
    Applicant: SanDisk Technologies LLC
    Inventors: Kevin Michael Conley, Raul-Adrian Cernea, Eran Sharon, Idan Alrod
  • Rewritable multibit non-volatile memory with soft decode optimization
    Patent number: 9640253
    Abstract: A non-volatile memory system including multi-level storage optimized for ramp sensing and soft decoding is provided. Sensing is performed at a higher bit resolution than an original user data encoding to improve the accuracy of reading state information from non-volatile storage elements. Higher resolution state information is used for decoding the original user data to improve read performance through improved error handling. Ramp sensing is utilized to determine state information by applying a continuous input scanning sense voltage that spans a range of read compare points. Full sequence programming is enabled as is interleaved coding of the user data over all of the data bit sets associated with the storage elements.
    Type: Grant
    Filed: July 7, 2016
    Date of Patent: May 2, 2017
    Assignee: SanDisk Technologies LLC
    Inventors: Kevin Michael Conley, Raul-Adrian Cernea, Eran Sharon, Idan Alrod
  • Rewritable Multibit Non-Volatile Memory With Soft Decode Optimization
    Publication number: 20160314834
    Abstract: A non-volatile memory system including multi-level storage optimized for ramp sensing and soft decoding is provided. Sensing is performed at a higher bit resolution than an original user data encoding to improve the accuracy of reading state information from non-volatile storage elements. Higher resolution state information is used for decoding the original user data to improve read performance through improved error handling. Ramp sensing is utilized to determine state information by applying a continuous input scanning sense voltage that spans a range of read compare points. Full sequence programming is enabled as is interleaved coding of the user data over all of the data bit sets associated with the storage elements.
    Type: Application
    Filed: July 7, 2016
    Publication date: October 27, 2016
    Applicant: SanDisk Technologies LLC
    Inventors: Kevin Michael Conley, Raul-Adrian Cernea, Eran Sharon, Idan Alrod
  • Rewritable multibit non-volatile memory with soft decode optimization
    Patent number: 9406377
    Abstract: A non-volatile memory system including multi-level storage optimized for ramp sensing and soft decoding is provided. Sensing is performed at a higher bit resolution than an original user data encoding to improve the accuracy of reading state information from non-volatile storage elements. Higher resolution state information is used for decoding the original user data to improve read performance through improved error handling. Ramp sensing is utilized to determine state information by applying a continuous input scanning sense voltage that spans a range of read compare points. Full sequence programming is enabled as is interleaved coding of the user data over all of the data bit sets associated with the storage elements.
    Type: Grant
    Filed: December 8, 2014
    Date of Patent: August 2, 2016
    Assignee: SanDisk Technologies LLC
    Inventors: Kevin Michael Conley, Raul-Adrian Cernea, Eran Sharon, Idan Alrod
  • Rewritable Multibit Non-Volatile Memory With Soft Decode Optimization
    Publication number: 20160163382
    Abstract: A non-volatile memory system including multi-level storage optimized for ramp sensing and soft decoding is provided. Sensing is performed at a higher bit resolution than an original user data encoding to improve the accuracy of reading state information from non-volatile storage elements. Higher resolution state information is used for decoding the original user data to improve read performance through improved error handling. Ramp sensing is utilized to determine state information by applying a continuous input scanning sense voltage that spans a range of read compare points. Full sequence programming is enabled as is interleaved coding of the user data over all of the data bit sets associated with the storage elements.
    Type: Application
    Filed: December 8, 2014
    Publication date: June 9, 2016
    Applicant: SanDisk Technologies Inc.
    Inventors: Kevin Michael Conley, Raul-Adrian Cernea, Eran Sharon, Idan Alrod