Abstract: In one form, a process of manufacturing an avalanche photodiode includes forming an insulating layer over an active region of a semiconductor substrate. A shallow terminal of the avalanche photodiode is defined using a first patterned mask. A first dopant is implanted through the first patterned mask and the insulating layer to form the shallow terminal. The first patterned mask is removed. A deep terminal of the avalanche photodiode is defined using second patterned mask. A second dopant is implanted through the second patterned mask and insulating layer to form the deep terminal of the avalanche photodiode. A respective terminal of at least one of the shallow terminal and the deep terminal is defined using a respective patterned mask that forms at least two regions that are spatially separated from each other with no implanted structure located in a space therebetween.

Abstract: In one form, a process of manufacturing an avalanche photodiode includes forming an insulating layer over an active region of a semiconductor substrate. A shallow terminal of the avalanche photodiode is defined using a first patterned mask. A first dopant is implanted through the first patterned mask and the insulating layer to form the shallow terminal. The first patterned mask is removed. A deep terminal of the avalanche photodiode is defined using second patterned mask. A second dopant is implanted through the second patterned mask and insulating layer to form the deep terminal of the avalanche photodiode. A respective terminal of at least one of the shallow terminal and the deep terminal is defined using a respective patterned mask that forms at least two regions that are spatially separated from each other with no implanted structure located in a space therebetween.

Abstract: The present disclosure relates to an avalanche photodiode comprising a substrate having an active area. A first dopant implant in the active area forms one of an anode and the cathode of the avalanche photodiode. A second dopant implant in the active area forming the other one of the anode and the cathode of the avalanche photodiode, wherein at least one of the first and second dopant implants defines a discontinuous formation having at least one interruption.

Abstract: An electronic device comprises at least one static induction transistor (14; 114; 214) and at least one thin film transistor (16; 116). The static induction transistor (14; 114; 214) has a first channel (14.4; 114.4; 214.4) of a semi conducting material extending between a first main electrode (14.2; 114.2; 214.2) and a second main electrode (14.3; 114.3) through a first and a second insulating layer (11, 13; 111, 113), and has a first control electrode (14.1; 114.1) surrounding the first channel and extending between the first and the second insulating layer. The thin film transistor (16; 116) has a third main electrode (16.2; 116.2) and a fourth main electrode (16.3; 116.3) coupled by a second channel (16.4; 116.4) of a semi conducting material and a second control electrode (16.1; 116.1). At least one of the first and the second insulating layer functions as a dielectric layer between the second control electrode and the second channel.

Abstract: The invention relates to a display structure comprising an electrode layer (3) superposed on a sub-layer (5) wherein a surface of the sub-layer facing the electrode layer is roughened. In particular, the display structure may relate to a TFT stack comprising a layer of an electrode metal corresponding to a pixel electrode (3). The pixel pad together with the data line (1) is used for charging of the pixel pad. The gate electrode (4) used is separated from the source and drain electrode (1, 3) by a dielectric layer (6). The structural layers of the TFT may be deposited on a suitable flexible substrate (7). In order to prevent defects in the light modulating layer (9) from being visible, a surface of the sub-layer (5) underlying the electrode layer (3) is roughened. It is desirable to provide such improvement to, among others, electrophoretic-type displays and liquid crystal-type displays.

Abstract: A display structure is described comprising a displaying medium, a backplane provided with an active matrix and a pixel pad comprising a plurality of pixels having an inter-pixel spacing, said pixel pad superposing the active matrix, wherein the inter-pixel spacing is in the range of 2.5-40 micrometers, preferably in the range of 8-20 micrometers.

Abstract: A display structure is described comprising a displaying medium, a backplane provided with an active matrix and a pixel pad comprising a plurality of pixels having an inter-pixel spacing, said pixel pad superposing the active matrix, wherein the inter-pixel spacing is in the range of 2.5-40 micrometers, preferably in the range of 8-20 micrometers.

Abstract: A transistor structure is described herein that includes a semiconductor layer and a dielectric layer. In accordance with the disclosure, at least one of the semiconductor layer and/or the dielectric layer comprises a chemical additive having a higher reaction potential for a chemical species present in an environment than a material of the semiconductor layer and/or the dielectric layer.

Abstract: The invention relates to a display structure comprising an electrode layer (3) superposed on a sub-layer (5) wherein a surface of the sub-layer facing the electrode layer is roughened. In particular, the display structure may relate to a TFT stack comprising a layer of an electrode metal corresponding to a pixel electrode (3). The pixel pad together with the data line (1) is used for charging of the pixel pad. The gate electrode (4) used is separated from the source and drain electrode (1, 3) by a dielectric layer (6). The structural layers of the TFT may be deposited on a suitable flexible substrate (7). In order to prevent defects in the light modulating layer (9) from being visible, a surface of the sub-layer (5) underlying the electrode layer (3) is roughened. It is desirable to provide such improvement to, among others, electrophoretic-type displays and liquid crystal-type displays.

Abstract: An electronic device comprises at least one static induction transistor (14; 114; 214) and at least one thin film transistor (16; 116). The static induction transistor (14; 114; 214) has a first channel (14.4; 114.4; 214.4) of a semi conducting material extending between a first main electrode (14.2; 114.2; 214.2) and a second main electrode (14.3; 114.3) through a first and a second insulating layer (11, 13; 111, 113), and has a first control electrode (14.1; 114.1) surrounding the first channel and extending between the first and the second insulating layer. The thin film transistor (16; 116) has a third main electrode (16.2; 116.2) and a fourth main electrode (16.3; 116.3) coupled by a second channel (16.4; 116.4) of a semi conducting material and a second control electrode (16.1; 116.1). At least one of the first and the second insulating layer functions as a dielectric layer between the second control electrode and the second channel.