Abstract: A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate.

Abstract: A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate.

Abstract: The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.

Abstract: A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate.

Abstract: A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate.

Abstract: The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.

Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.

Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.

Abstract: The invention provides a composition for slicing a substrate using a wire saw wherein the composition comprises a liquid carrier and an abrasive. The invention further provides methods of slicing a substrate using a wire saw and a composition.

Abstract: The invention is directed to a method of polishing a surface of an object that includes aluminum. The method includes the step of contacting the surface of the object with a soft polishing pad and a polishing composition. The polishing composition includes abrasive particles, an agent that oxidizes aluminum, and a liquid carrier to polish the surface of the object. The polishing composition includes the abrasive particles suspended in the liquid carrier, and is applied at a pH above about 7.

Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.

Abstract: The invention provides a composition for slicing a substrate using a wire saw wherein the composition comprises a liquid carrier and an abrasive. The invention further provides methods of slicing a substrate using a wire saw and a composition.

Abstract: The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.

Abstract: The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.

Abstract: The present invention provides a method for polishing an aluminum nitride substrate. The method comprises abrading a surface of the aluminum nitride substrate with a basic, aqueous polishing composition, which comprises an abrasive (e.g., colloidal silica), an oxidizing agent (e.g., hydrogen peroxide), and an aqueous carrier. The methods of the invention provide for substantially improved polishing rates relative to conventional methods that do not utilize an oxidizing agent in the polishing slurry.

Abstract: The present invention provides glass polishing compositions and methods suitable for polishing a glass substrate at a down force of about 110 g/cm2 or less. One preferred polishing composition comprises a particulate cerium oxide abrasive (e.g., about 1 to about 15 percent by weight) suspended in an aqueous carrier containing a polymeric stabilizer, e.g., about 50 to about 1500 ppm of the stabilizer, and optionally, a water soluble inorganic salt. Preferably, the particulate cerium oxide abrasive has a mean particle size in the range of about 0.35 to about 0.9 ?m. Another preferred composition comprises about 1 to about 15 percent by weight of a particulate cerium oxide abrasive characterized by a mean particle size of at least about 0.2 ?m and a purity of at least about 99.9% CeO2, on a weight basis, suspended in an aqueous carrier at a pH at least about 1 unit higher or lower than the isoelectric point (IEP) of the cerium oxide abrasive.

Abstract: This invention provides a method for increasing the cutting performance of a wire saw, in cutting a substrate, by increasing the association of the abrasive particles in the cutting slurry and the cutting wire, the enhancement being caused by the use of thickening agents in the cutting slurry or by increasing the attraction of the abrasive particles to the cutting wire.

Abstract: A method and system is provided for improved polishing or planarizing of aluminum oxide and/or aluminum oxynitride substrates. Specifically, the composition comprises an abrasive, a liquid carrier, and a phosphorus-type mono-acid. Preferably, the phosphorus-type mono-acid is phosphoric acid, phosphonoacetic acid, phosphorous acid, methyl phosphonic acid, or mixtures thereof. The control of the pH of the composition further improves polishing rates.

Abstract: The invention is directed to a method of polishing a surface of an object that includes aluminum. The method includes the step of contacting the surface of the object with a soft polishing pad and a polishing composition. The polishing composition includes abrasive particles, an agent that oxidizes aluminum, and a liquid carrier to polish the surface of the object. The polishing composition includes the abrasive particles suspended in the liquid carrier, and is applied at a pH above about 7.

Abstract: The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.