Abstract: There is provided a microparticle comprising magnetic nanoparticles within a matrix such as a polymer sphere, wherein the magnetic nanoparticles have an anisotropy constant K in the range 1.0 to 3.0×105 ergs cm?3 and exhibit a hysteresis loop under an alternating magnetic field so as to generate hysteresis heating whilst fixed within the polymer sphere. The alternating magnetic field has a maximum field strength in the range 100 to 400 Oe and a frequency in the range 25 kHz to 500 kHz. The magnetic nanoparticles have an axial ratio of at least 1.1 and are preferably magnetite and substantially crystalline. A method of synthesising such magnetic nanoparticles is also provided.

Abstract: A modular lift system may include, but is not limited to: one or more lift segments each including: a lift-truss structure; and a drive shaft having at least one end-coupler, at least one lift assembly coupled to the lift-truss structure, and at least one drive segment including: a drive-truss structure; a drive motor coupled to the drive-truss structure; and a drive-coupler attached to the drive motor and configured to engage the end-coupler of the drive shaft.

Abstract: A press bolster adaptor for accommodating different die binders with the same press bolster and fixed pin pattern is provided. The bolster adaptor comprises a base plate, a top plate, and a float plate surrounded by side walls of the base plate. A plurality of lower cushion pins are disposed on the press bolster and move the float plate toward the die binder. A plurality of upper cushion pins are disposed on the float plate and extend through pin holes of the top plate for engaging the die binder in the appropriate locations when the float plate is driven by the lower cushion pins. The upper cushion pins can be rearranged in the pin holes to accommodate new die binders having different designs. Alternatively, the top plate can be replaced with a top plate having a different pin pattern to accommodate a different die binder.

Abstract: There is provided a magnetic storage disc comprising a heat-assisted magnetic recording structure comprising an adjoining ferromagnetic sputtered layer and antiferromagnetic sputtered layer magnetically coupled to each other by a magnetic exchange interaction giving rise to exchange bias, wherein the anisotropy axis of the antiferromagnetic sputtered layer is configured to be perpendicular to at least one seed layer disposed between the antiferromagnetic sputtered layer and a supporting substrate. A magnetically soft layer is disposed between the antiferromagnetic sputtered layer and the at least one seed layer. A method of forming a magnetic recording disc is also provided.

Abstract: There is provided a magnetic storage disc comprising a heat-assisted magnetic recording structure comprising an adjoining ferromagnetic sputtered layer and antiferromagnetic sputtered layer magnetically coupled to each other by a magnetic exchange interaction giving rise to exchange bias, wherein the anisotropy axis of the antiferromagnetic sputtered layer is configured to be perpendicular to at least one seed layer disposed between the antiferromagnetic sputtered layer and a supporting substrate. A magnetically soft layer is disposed between the antiferromagnetic sputtered layer and the at least one seed layer. A method of forming a magnetic recording disc is also provided.

Abstract: There is provided a method of pinning domain walls in a magnetic memory device (10) comprising using an antiferromagnetic material to create domain wall pinning sites. Junctions (22) where arrays of ferromagnetic nanowires (16) and antiferromagnetic nanowires (20) cross exhibit a permanent exchange bias interaction between the ferromagnetic material and the antiferromagnetic material which creates domain wall pinning sites. The exchange bias field is between 30 to 3600 Oe and the anisotropy direction of the ferromagnetic elements is between 15 to 75° to an anisotropy direction of the antiferromagnetic elements.

Abstract: There is provided a method of pinning domain walls in a magnetic memory device (10) comprising using an antiferromagnetic material to create domain wall pinning sites. Junctions (22) where arrays of ferromagnetic nanowires (16) and antiferromagnetic nanowires (20) cross exhibit a permanent exchange bias interaction between the ferromagnetic material and the antiferromagnetic material which creates domain wall pinning sites. The exchange bias field is between 30 to 3600 Oe and the anisotropy direction of the ferromagnetic elements is between 15 to 75° to an anisotropy direction of the antiferromagnetic elements.