Abstract: A chemical mechanical polishing composition includes a liquid carrier and colloidal silica particles dispersed in the liquid carrier. The colloidal silica particles have a positive charge of at least 10 mV in the liquid carrier and may be characterized as having: (i) a number average aspect ratio of greater than about 1.25 and (ii) a normalized particle size span by weight of greater than about 0.42. The polishing composition may further optionally include an iron-containing accelerator and a tungsten etch inhibitor, for example, when the polishing composition is a tungsten CMP composition.

Abstract: A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, anionic particles dispersed in the liquid carrier, an anionic polymer or surfactant, and a cationic polymer.

Abstract: A composition comprises, consists of, or consists essentially of a polymer including a derivatized amino acid monomer unit. A chemical mechanical polishing composition includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, and a cationic polymer having a derivatized amino acid monomer unit. A method of chemical mechanical polishing includes utilizing the chemical mechanical polishing composition to remove at least a portion of a metal or dielectric layer from a substrate and thereby polish the substrate.

Abstract: A chemical mechanical polishing composition includes a liquid carrier and colloidal silica particles dispersed in the liquid carrier. The colloidal silica particles have a positive charge of at least 10 mV in the liquid carrier and may be characterized as having: (i) a number average aspect ratio of greater than about 1.25 and (ii) a normalized particle size span by weight of greater than about 0.42. The polishing composition may further optionally include an iron-containing accelerator and a tungsten etch inhibitor, for example, when the polishing composition is a tungsten CMP composition.

Abstract: A composition comprises, consists of, or consists essentially of a polymer including a derivatized amino acid monomer unit. A chemical mechanical polishing composition includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, and a cationic polymer having a derivatized amino acid monomer unit. A method of chemical mechanical polishing includes utilizing the chemical mechanical polishing composition to remove at least a portion of a metal or dielectric layer from a substrate and thereby polish the substrate.

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, zirconia, and combinations thereof, wherein the abrasive is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and carboxylic acid monomeric units a combination of sulfonic acid monomeric units and phosphonic acid monomeric units, (b) an oxidizing agent, and (c) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises tungsten or cobalt and silicon oxide.

Abstract: A chemical mechanical polishing composition includes a water based liquid carrier, cationic abrasive particles dispersed in the liquid carrier, a first amino acid compound having an isoelectric point of less than 7 and a second amino acid compound having an isoelectric point of greater than 7. The pH of the composition is in a range from about 1 to about 5. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract: A chemical mechanical polishing composition includes a water based liquid carrier, cationic abrasive particles dispersed in the liquid carrier, a first amino acid compound having an isoelectric point of less than 7 and a second amino acid compound having an isoelectric point of greater than 7. The pH of the composition is in a range from about 1 to about 5. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract: The invention provides a chemical-mechanical polishing composition comprising a) surface-modified colloidal silica particles, comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about ?5 mV to about ?35 mV at a pH of about 3, b) an iron compound, c) a stabilizing agent, d) a corrosion inhibitor, and e) an aqueous carrier. The invention also provides a method suitable for polishing a substrate.

Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, a polyhydroxy aromatic carboxylic acid, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

Abstract: The invention provides a chemical-mechanical polishing composition comprising a) surface-modified colloidal silica particles, comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about ?5 mV to about ?35 mV at a pH of about 3, b) an iron compound, c) a stabilizing agent, d) a corrosion inhibitor, and e) an aqueous carrier. The invention also provides a method suitable for polishing a substrate.

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, zirconia, and combinations thereof, wherein the abrasive is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and carboxylic acid monomeric units a combination of sulfonic acid monomeric units and phosphonic acid monomeric units, (b) an oxidizing agent, and (c) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises tungsten or cobalt and silicon oxide.

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an iron containing accelerator, and a cationic polymer having an amino acid monomer. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above-described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract: Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.

Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, a polyhydroxy aromatic carboxylic acid, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

Abstract: Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.

Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

Abstract: An aqueous inkjet printing fluid composition for use in an inkjet printer including a silicon-based material which contacts the aqueous printing fluid composition, having in a concentration sufficient to inhibit corrosion of the silicon-based material when contacted by the aqueous printing fluid composition a soluble metal ligand complex of Formula (I): wherein M represents a divalent or a trivalent metal, R1 and R2 each independently represent alkyl, aryl, or heteroaryl substituents, R3 represents hydrogen, a halide, or an alkyl, aryl, or heteroaryl substituent, and the number of ligands n is 2 or 3. The useful lifetime of microelectromechanical fluidic devices based on silicon fabrication is extended.

Abstract: An aqueous inkjet printing fluid composition for use in an inkjet printer having a silicon-based material which contacts the aqueous printing fluid composition, including in a concentration sufficient to inhibit corrosion of the silicon-based material when contacted by the aqueous printing fluid composition a soluble metal ligand complex of Formula (I): wherein M represents a divalent or a trivalent metal, R1 represents a hydrogen, or an alkyl, alkenyl, or aryl substituent, X1 and X2 each independently represent either O or S, Q represents the atoms necessary to form a five, six or seven-membered heterocyclic or carbocyclic ring, and the number of ligands n is 2 or 3. The useful lifetime of microelectromechanical fluidic devices based on silicon fabrication is extended.