Patents by Inventor Kevin Q. Yin

Kevin Q. Yin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for controlling an emitter window opening in an HBT and related structure
    Patent number: 6586307
    Abstract: According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a top surface. The heterojunction bipolar transistor further comprises a first spacer and a second spacer situated on the top surface of the base. The heterojunction bipolar transistor further comprises an intermediate oxide layer situated on the first and second oxide spacers. The heterojunction bipolar transistor further comprises an amorphous layer situated on the intermediate oxide layer. The heterojunction bipolar transistor further comprises an antireflective coating layer on the amorphous layer. The heterojunction bipolar transistor further comprises an emitter window opening situated between the first and second spacers, where the emitter window opening is defined by the top surface of the base, the first and second spacers, the intermediate oxide layer, the amorphous layer, and the antireflective coating layer.
    Type: Grant
    Filed: February 14, 2002
    Date of Patent: July 1, 2003
    Assignee: Newport Fab, LLC
    Inventors: Amol M. Kalburge, Kevin Q. Yin, Klaus F. Schuegraf