Patents by Inventor Kevin R. Gast
Kevin R. Gast has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11101280Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers comprising memory-block regions having channel-material strings therein. Conductor-material contacts are directly against the channel material of individual of the channel-material strings. First insulator material is formed directly above the conductor-material contacts. The first insulator material comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Second insulator material is formed directly above the first insulator material and the conductor-material contacts. The second insulator material is devoid of each of the (a) and (b). Third insulator material is formed directly above the second insulator material, the first insulator material, and the conductor-material contacts. The third insulator material comprises at least one of the (a) and (b).Type: GrantFiled: December 27, 2019Date of Patent: August 24, 2021Assignee: Micron Technology, Inc.Inventors: Anilkumar Chandolu, S.M. Istiaque Hossain, Darwin A. Clampitt, Arun Kumar Dhayalan, Kevin R. Gast, Christopher Larsen, Prakash Rau Mokhna Rau, Shashank Saraf
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Patent number: 11088017Abstract: A method of forming a semiconductor structure includes forming a sacrificial material over a stack comprising alternating levels of a dielectric material and another material, forming an opening through the sacrificial material and at least some of the alternating levels of the dielectric material and the another material, forming at least one oxide material in the opening and overlying surfaces of the sacrificial material, an uppermost surface of the at least one oxide material extending more distal from a surface of a substrate than an uppermost level of the dielectric material and the another material, planarizing at least a portion of the at least one oxide material to expose a portion of the sacrificial material, and removing the sacrificial material while the uppermost surface of the at least one oxide material remains more distal from the surface of the substrate than the uppermost level of the alternating levels of the dielectric material and the another material.Type: GrantFiled: March 2, 2020Date of Patent: August 10, 2021Assignee: Micron Technology, Inc.Inventors: John B. Matovu, David S. Meyaard, Gowrisankar Damarla, Sri Sai Sivakumar Vegunta, Kunal Shrotri, Shashank Saraf, Kevin R. Gast, Jivaan Kishore Jhothiraman, Suresh Ramarajan, Lifang Xu, Rithu K. Bhonsle, Rutuparna Narulkar, Matthew J. King
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Publication number: 20210202515Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers comprising memory-block regions having channel-material strings therein. Conductor-material contacts are directly against the channel material of individual of the channel-material strings. First insulator material is formed directly above the conductor-material contacts. The first insulator material comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Second insulator material is formed directly above the first insulator material and the conductor-material contacts. The second insulator material is devoid of each of the (a) and (b). Third insulator material is formed directly above the second insulator material, the first insulator material, and the conductor-material contacts. The third insulator material comprises at least one of the (a) and (b).Type: ApplicationFiled: December 27, 2019Publication date: July 1, 2021Applicant: Micron Technology, Inc.Inventors: Anilkumar Chandolu, S.M. Istiaque Hossain, Darwin A. Clampitt, Arun Kumar Dhayalan, Kevin R. Gast, Christopher Larsen, Prakash Rau Mokhna Rau, Shashank Saraf
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Publication number: 20200203220Abstract: A method of forming a semiconductor structure includes forming a sacrificial material over a stack comprising alternating levels of a dielectric material and another material, forming an opening through the sacrificial material and at least some of the alternating levels of the dielectric material and the another material, forming at least one oxide material in the opening and overlying surfaces of the sacrificial material, an uppermost surface of the at least one oxide material extending more distal from a surface of a substrate than an uppermost level of the dielectric material and the another material, planarizing at least a portion of the at least one oxide material to expose a portion of the sacrificial material, and removing the sacrificial material while the uppermost surface of the at least one oxide material remains more distal from the surface of the substrate than the uppermost level of the alternating levels of the dielectric material and the another material.Type: ApplicationFiled: March 2, 2020Publication date: June 25, 2020Inventors: John B. Matovu, David S. Meyaard, Gowrisankar Damarla, Sri Sai Sivakumar Vegunta, Kunal Shrotri, Shashank Saraf, Kevin R. Gast, Jivaan Kishore Jhothiraman, Suresh Ramarajan, Lifang Xu, Rithu K. Bhonsle, Rutuparna Narulkar, Matthew J. King
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Patent number: 10600682Abstract: A method of forming a semiconductor structure includes forming a sacrificial material over a stack comprising alternating levels of a dielectric material and another material, forming an opening through the sacrificial material and at least some of the alternating levels of the dielectric material and the another material, forming at least one oxide material in the opening and overlying surfaces of the sacrificial material, an uppermost surface of the at least one oxide material extending more distal from a surface of a substrate than an uppermost level of the dielectric material and the another material, planarizing at least a portion of the at least one oxide material to expose a portion of the sacrificial material, and removing the sacrificial material while the uppermost surface of the at least one oxide material remains more distal from the surface of the substrate than the uppermost level of the alternating levels of the dielectric material and the another material.Type: GrantFiled: October 26, 2018Date of Patent: March 24, 2020Assignee: Micron Technology, Inc.Inventors: John B. Matovu, David S. Meyaard, Gowrisankar Damarla, Sri Sai Sivakumar Vegunta, Kunal Shrotri, Shashank Saraf, Kevin R. Gast, Jivaan Kishore Jhothiraman, Suresh Ramarajan, Lifang Xu, Rithu K. Bhonsle, Rutuparna Narulkar, Matthew J. King
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Publication number: 20190206727Abstract: A method of forming a semiconductor structure includes forming a sacrificial material over a stack comprising alternating levels of a dielectric material and another material, forming an opening through the sacrificial material and at least some of the alternating levels of the dielectric material and the another material, forming at least one oxide material in the opening and overlying surfaces of the sacrificial material, an uppermost surface of the at least one oxide material extending more distal from a surface of a substrate than an uppermost level of the dielectric material and the another material, planarizing at least a portion of the at least one oxide material to expose a portion of the sacrificial material, and removing the sacrificial material while the uppermost surface of the at least one oxide material remains more distal from the surface of the substrate than the uppermost level of the alternating levels of the dielectric material and the another material.Type: ApplicationFiled: October 26, 2018Publication date: July 4, 2019Inventors: John B. Matovu, David S. Meyaard, Gowrisankar Damarla, Sri Sai Sivakumar Vegunta, Kunal Shrotri, Shashank Saraf, Kevin R. Gast, Jivaan Kishore Jhothiraman, Suresh Ramarajan, Lifang Xu, Rithu K. Bhonsle, Rutuparna Narulkar, Matthew J. King
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Patent number: 10269625Abstract: A method of forming a semiconductor structure includes forming a sacrificial material over a stack comprising alternating levels of a dielectric material and another material, forming an opening through the sacrificial material and at least some of the alternating levels of the dielectric material and the another material, forming at least one oxide material in the opening and overlying surfaces of the sacrificial material, an uppermost surface of the at least one oxide material extending more distal from a surface of a substrate than an uppermost level of the dielectric material and the another material, planarizing at least a portion of the at least one oxide material to expose a portion of the sacrificial material, and removing the sacrificial material while the uppermost surface of the at least one oxide material remains more distal from the surface of the substrate than the uppermost level of the alternating levels of the dielectric material and the another material.Type: GrantFiled: December 28, 2017Date of Patent: April 23, 2019Assignee: Micron Technology, Inc.Inventors: John B. Matovu, David S. Meyaard, Gowrisankar Damarla, Sri Sai Sivakumar Vegunta, Kunal Shrotri, Shashank Saraf, Kevin R. Gast, Jivaan Kishore Jhothiraman, Suresh Ramarajan, Lifang Xu, Rithu K. Bhonsle, Rutuparna Narulkar, Matthew J. King