Patents by Inventor Kevin Ryu

Kevin Ryu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230299225
    Abstract: Fabrication of avalanche photodiodes on a first wafer for operation in Geiger mode and integration with read-out integrated circuits (ROICs), fabricated on a second wafer, are described. Photodiode arrays are fabricated using a thin epitaxial layer grown on a semiconductor-on-insulator wafer. Chips are diced from the first wafer and bump bonded to chips diced from the second wafer.
    Type: Application
    Filed: January 18, 2023
    Publication date: September 21, 2023
    Applicant: Massachusetts Institute of Technology
    Inventors: Kevin Ryu, Joseph S. Ciampi, Brian F. AULL, Kevan Donlon, Renee D. Lambert
  • Patent number: 11372119
    Abstract: A chip-to-chip integration process for rapid prototyping of silicon avalanche photodiode (APD) arrays has been developed. This process has several advantages over wafer-level 3D integration, including: (1) reduced cost per development cycle since a dedicated full-wafer read-out integrated circuit (ROIC) fabrication is not needed, (2) compatibility with ROICs made in previous fabrication runs, and (3) accelerated schedule. The process provides several advantages over previous processes for chip-to-chip integration, including: (1) shorter processing time as the chips can be diced, bump-bonded, and then thinned at the chip-level faster than in a wafer-level back-illumination process, and (2) the CMOS substrate provides mechanical support for the APD device, allowing integration of fast microlenses directly on the APD back surface. This approach yields APDs with low dark count rates (DCRs) and higher radiation tolerance for harsh environments and can be extended to large arrays of APDs.
    Type: Grant
    Filed: January 31, 2020
    Date of Patent: June 28, 2022
    Assignee: Massachusetts Institute of Technology
    Inventors: Brian F. Aull, Joseph S. Ciampi, Renee D. Lambert, Christopher Leitz, Karl Alexander McIntosh, Steven Rabe, Kevin Ryu, Daniel R. Schuette, David Volfson
  • Patent number: 10825950
    Abstract: A new process that enables void-free direct-bonded MBE-passivated large-format image sensors is disclosed. This process can be used to produce thin large-area image sensors for UV and soft x-ray imaging. Such devices may be valuable in future astronomy missions or in the radiology field. Importantly, by controlling the hydrogen concentration in the silicon oxide layers of the image sensor and the support wafer, voids in the bonding interface can be significantly reduced or eliminated. This process can be applied to any wafer that includes active circuitry and requires a second wafer, such as a support wafer.
    Type: Grant
    Filed: May 14, 2019
    Date of Patent: November 3, 2020
    Assignee: Massachusetts Institute of Technology
    Inventors: James Gregory, Christopher Leitz, Kevin Ryu, Donna-Ruth Yost, Vladimir Bolkhovsky, Renee Lambert
  • Publication number: 20200319355
    Abstract: A chip-to-chip integration process for rapid prototyping of silicon avalanche photodiode (APD) arrays has been developed. This process has several advantages over wafer-level 3D integration, including: (1) reduced cost per development cycle since a dedicated full-wafer read-out integrated circuit (ROIC) fabrication is not needed, (2) compatibility with ROICs made in previous fabrication runs, and (3) accelerated schedule. The process provides several advantages over previous processes for chip-to-chip integration, including: (1) shorter processing time as the chips can be diced, bump-bonded, and then thinned at the chip-level faster than in a wafer-level back-illumination process, and (2) the CMOS substrate provides mechanical support for the APD device, allowing integration of fast microlenses directly on the APD back surface. This approach yields APDs with low dark count rates (DCRs) and higher radiation tolerance for harsh environments and can be extended to large arrays of APDs.
    Type: Application
    Filed: January 31, 2020
    Publication date: October 8, 2020
    Inventors: Brian F. AULL, Joseph S. Ciampi, Renee D. Lambert, Christopher Leitz, Karl Alexander McIntosh, Steven Rabe, Kevin Ryu, Daniel R. SCHUETTE, David Volfson
  • Publication number: 20190371855
    Abstract: A new process that enables void-free direct-bonded MBE-passivated large-format image sensors is disclosed. This process can be used to produce thin large-area image sensors for UV and soft x-ray imaging. Such devices may be valuable in future astronomy missions or in the radiology field. Importantly, by controlling the hydrogen concentration in the silicon oxide layers of the image sensor and the support wafer, voids in the bonding interface can be significantly reduced or eliminated. This process can be applied to any wafer that includes active circuitry and requires a second wafer, such as a support wafer.
    Type: Application
    Filed: May 14, 2019
    Publication date: December 5, 2019
    Inventors: James Gregory, Christopher Leitz, Kevin Ryu, Donna-Ruth Yost, Vladimir Bolkhovsky, Renee Lambert
  • Publication number: 20090092351
    Abstract: A method for optimizing the architecture of a linear sensor array using WDM-TDM technology and stabilizing the reflectivity spectral profile of the fiber Bragg gratings of the sensors against the influence of environmental factors such as pressure and temperature is provided. The method includes stripping a portion of the foamed coating on the exterior of an optical fiber in the region of the fiber Bragg grating to thin the coating in the region of the grating. After the coating is stripped and the optical fiber cleaned, the area of stripped fiber is recoated with an unvoided plastic.
    Type: Application
    Filed: December 8, 2006
    Publication date: April 9, 2009
    Applicant: SABEUS, INC.
    Inventors: Eric Lee Goldner, Leo Lam, Graham Martin, Kevin Ryu