Abstract: Nasal medication or drug delivery devices and methods for delivering adjustable or variable metered volumetric doses of medication or drugs to a nasal passageway of a user or patient. Relative movement between portions of a reservoir allows for selection between pre-set volume doses of medication for delivery. The delivery device may include a nosepiece for fitting into the nostril of the user or patient, a medication or drug reservoir or dosing chamber, and an external reservoir adapter for providing the medication from an external reservoir.

Abstract: Nasal medication or drug delivery devices and methods for delivering adjustable or variable metered volumetric doses of medication or drugs to a nasal passageway of a user or patient. Relative movement between portions of a reservoir establish a set volume of medication for delivery. The delivery device may include a nosepiece for fitting into the nostril of the user or patient, a medication or drug reservoir or dosing chamber, and an external reservoir adapter for providing the medication from an external reservoir.

Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.

Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.

Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.

Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.

Abstract: Nasal medication or drug delivery devices and methods for delivering adjustable or variable metered volumetric doses of medication or drugs to a nasal passageway of a user or patient. Relative movement between portions of a reservoir establish a set volume of medication for delivery. The delivery device may include a nosepiece for fitting into the nostril of the user or patient, a medication or drug reservoir or dosing chamber, and an external reservoir adapter for providing the medication from an external reservoir.

Abstract: A method of designing a well control operation includes obtaining sub-surface data related to a formation surrounding a well, building a geomechanical model of the formation based on the sub-surface data, obtaining operational data related to the well control operation, performing, on a processor, a hydraulic fracture simulation of the formation, wherein the simulation is based on the operational data and the geomechanical model, and determining an estimated volume of fluid required for a fracture to breach an upper surface of the formation.

Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.

Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.

Abstract: A thermoelectric module comprising: a plurality of thermocouples electrically connected in series to provide a main electrical path through the thermoelectric module, each thermocouple comprising an n-type thermoelectric element and a p-type thermoelectric element; and at least one shunt electrical path connected in parallel to a portion of the main electrical path, the portion of the main electrical path comprising at least one of the n-type and/or p-type thermoelectric elements; wherein the resistance of a given shunt electrical path is less than the resistance of the main electrical path and more than the resistance of the portion of the main electrical path with which the given shunt electrical path is in parallel.

Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.

Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.

Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.

Abstract: In seismic survey for icy waters, streamers are towed behind a vessel under the water's surface to avoid ice. GPS readings may not be consistently obtained because the ice prevents a tail buoy with a GPS receiver from trailing from streamer at the surface. Instead, a device tows on the streamer under the water's surface. The streamer's absolute position is tracked by intermittently bringing the towed device toward the surface so GPS readings can be obtained. The streamer's absolute position can then be used in conjunction with compass readings and can correlate various seismic sensor signals obtained along the streamer during the survey. The compass readings can be corrected for declination using declinometer readings, which can be compensated for iron effects from the vessel or other device carrying the declinometer.

Abstract: A method of designing a well control operation includes obtaining sub-surface data related to a formation surrounding a well, building a geomechanical model of the formation based on the sub-surface data, obtaining operational data related to the well control operation, performing, on a processor, a hydraulic fracture simulation of the formation, wherein the simulation is based on the operational data and the geomechanical model, and determining an estimated volume of fluid required for a fracture to breach an upper surface of the formation.

Abstract: In seismic survey for icy waters, streamers are towed behind a vessel under the water's surface to avoid ice. GPS readings may not be consistently obtained because the ice prevents a tail buoy with a GPS receiver from trailing from streamer at the surface. Instead, a device tows on the streamer under the water's surface. The streamer's absolute position is tracked by intermittently bringing the towed device toward the surface so GPS readings can be obtained. The streamer's absolute position can then be used in conjunction with compass readings and can correlate various seismic sensor signals obtained along the streamer during the survey. The compass readings can be corrected for declination using declinometer readings, which can be compensated for iron effects from the vessel or other device carrying the declinometer.

Abstract: Disclosed is a carpet seaming apparatus for coupling a pair of carpets with each other. The carpet seaming apparatus includes a base plate assembly, a holding member, and a power unit. The base plate assembly has a top surface and a bottom surface. The base plate assembly adapted to be heated upon receiving electric power. The holding member is mounted on the top surface of the base plate assembly. The holding member is configured to enable a user to hold the carpet seaming apparatus. The power unit is configured at the holding member and operatively coupled to the base plate assembly. The power unit is capable of supplying the electric power for heating the base plate assembly.

Abstract: A microwave desorber is used to remove volatile organic compounds from resins in order to recycle the resins. The desorber includes a container adapted to receive the contaminated resin, and at least one waveguide adapted to introduce microwave energy into the contaminates in the container. A mechanism is provided for moving one of the container and the waveguide relative to the other container and the waveguide to facilitate uniform heating of the contaminants. At least one of the container and the waveguide can be moved, such as oscillated, radially or axially. The contaminated resins can be moved through a preferred radial zone of the container in order to optimize the microwave heating in accordance with the particular contaminates or resins.

Abstract: A method for removing a first sorbate having a first desorption activation energy and a second sorbate having a second desorption activation energy from a sorbent, involves a two-stage desorber. In a first stage, the first sorbate, second sorbate and the sorbent are contacted with a stripping fluid having a first temperature sufficient to separate the first sorbate in a vapor phase from the sorbent. In a second stage, the second sorbate and the sorbent is heated to a second temperature higher than the first temperature to separate the second sorbate in a vapor phase from the sorbent. The second sorbate can then be condensed to a liquid phase and sold to offset the costs of the process. Heating in the second phase can be facilitated by the introduction of microwave or infrared energy for stripping the second sorbate from the sorbent. Use of the microwave or infrared energy can be facilitated with a purging gas which can also be heated to function as a stripping gas.