Abstract: A processing system may include a plasma chamber operable to generate a plasma, and an extraction assembly, arranged along a side of the plasma chamber. The extraction assembly may include an extraction plate including an extraction aperture, the extraction plate having a non-planar shape, and generating an extracted ion beam at a high angle of incidence with respect to a perpendicular to a plane of a substrate, when the plane of the substrate is arranged parallel to the side of the plasma chamber.

Abstract: A fastening assembly for fastening a beam blocker to an extraction plate, the fastening assembly including a mounting pin having a shaft portion, a base portion at a first end of the shaft portion, and a head portion at a second end of the shaft portion, a centering sleeve radially surrounding the shaft portion and axially abutting the base portion, the centering sleeve being radially compressible between the shaft portion and the extraction plate and between the shaft portion and the beam blocker, an annular spacer surrounding the centering sleeve and axially abutting the beam blocker, with the centering sleeve extending partially into the spacer, and a latching cap surrounding the shaft portion and axially abutting the spacer, with the shaft portion extending through a through hole of the latching cap, the through hole being smaller than the head portion in a direction perpendicular to an axis of mounting pin.

Abstract: A substrate holder assembly including a substrate platen, the substrate platen disposed to support a substrate at a substrate position, a halo ring, the halo ring being disposed around the substrate position, and an outer halo being disposed around the halo ring and defining a first aperture, wherein the outer halo is disposed to engage the halo ring, the halo ring being disposed at least partially within the first aperture, the halo ring defining a second aperture, concentrically positioned within the first aperture, wherein the outer halo and the halo ring are formed at least partially of silicon, silicon carbide, doped silicon, quartz, and ceramic.

Abstract: A processing system may include a plasma chamber operable to generate a plasma, and an extraction assembly, arranged along a side of the plasma chamber. The extraction assembly may include an extraction plate including an extraction aperture, the extraction plate having a non-planar shape, and generating an extracted ion beam at a high angle of incidence with respect to a perpendicular to a plane of a substrate, when the plane of the substrate is arranged parallel to the side of the plasma chamber.

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and a vacuum implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a chuck including a rotatable pedestal for supporting the workpiece.

Abstract: An apparatus for processing a semiconductor wafer. The apparatus according to the present invention comprises a wafer port flange including an electrostatic chuck and a top plate including a lip. The electrostatic chuck defines a circumferential gas distribution groove and a gas gap positioned between a backside of a semiconductor wafer and the electrostatic chuck. The lip is positioned to shield an outside band of the wafer. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 CFR §1.72(b).

Abstract: A wafer processing system is provided. The system includes a wafer handling system for introducing semiconductor wafers into a processing chamber. An oscillator is operatively coupled to an antenna for igniting a plasma within the processing chamber. The plasma and antenna form a resonant circuit with the oscillator, and the oscillator varies an output characteristic associated therewith based on a load change in the resonant circuit during plasma ignition.