Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

Abstract: A method may include generating, based on a plurality of electrophysiology simulations such as electrical and/or electromechanical activation maps, one or more atlases including an activation time (AT) atlas and a vectorcardiogram (VCG) atlas. The atlases may be generated by applying a dimensionality reduction technique to include one or more modes of variation present in the electrophysiology simulations. The atlases may be applied to match a clinical vectorcardiogram of a patient to a simulated vectorcardiogram associated with an activation map included in the electrophysiology simulations. At least one of a diagnosis or treatment for the patient may be determined based on the activation map. Related systems and computer program products are also provided.

Abstract: Disclosed is a method for execution by an SSEP (Somatosensory Evoked Potentials) system. The method involves acquiring at least one SSEP recording from a subject, and determining if the baseline potential is monitorable based on the at least one SSEP recording. The method also involves acquiring ongoing SSEP recordings from the subject, comparing the ongoing SSEP potentials to the monitorable baseline potential, and upon the ongoing SSEP potentials deviating from the monitorable baseline potential according to a defined criteria, executing an alert. This can allow a medical worker to decide whether to take any corrective action, such as repositioning the subject, with a goal of preventing or mitigating iatrogenic injury to a nervous system of the subject. The SSEP system can be substantially automated, such that there is little reliance on discretion by the medical worker. Also disclosed is a SSEP system configured to implement the method summarised above.

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

Abstract: Embodiments of the present disclosure generally relate to a processing system for forming one or more layers of a photodiode. In one embodiment, the processing system includes a transfer chamber, a plurality of processing chambers, and a controller configured to cause a process to be performed in the processing system. The process includes performing a pre-clean process on a substrate, aligning and placing a first mask on the substrate, depositing a first layer on the substrate, and depositing a second layer on the substrate. The processing system can form layers of a photodiode in a low defect, cost effective, and high utilization manner.

Abstract: Apparatuses, systems, and techniques to improve neural network computations. In at least one embodiment, a deep neural network library receives computation descriptors from one or more users and generates an optimized execution plan comprising one or more optimized operations to facilitate neural network computing.

Abstract: 4-methylumbelliferone is useful for the treatment of autoimmune diseases, such as primary sclerosing cholangitis (PSC).

Abstract: The present disclosure relates to an apparatus for generating nanobubbles of a gas in a liquid, the apparatus including: (a) an outer tube; (b) a porous inner tube coaxially located within the outer tube that is at least partially occluded so as to define one or more liquid flow paths through the inner tube; (c) a pair of end assemblies attached to respective first and second ends of the outer tube, each end assembly having an opening in fluid communication with the one or more liquid flow paths so as to allow a flow of liquid in an axial direction through the apparatus; and, (d) a gas inlet for allowing a flow of gas into a chamber formed between the outer and inner tube, the flow of gas permitted to permeate through the porous inner tube into the one or more liquid flow paths, wherein, as the gas permeates through the porous inner tube, nanobubbles of gas are generated which become entrained in the liquid flow.

Abstract: Embodiments of the present disclosure generally relate to a processing system for forming one or more layers of a photodiode. In one embodiment, the processing system includes a transfer chamber, a plurality of processing chambers, and a controller configured to cause a process to be performed in the processing system. The process includes performing a pre-clean process on a substrate, aligning and placing a first mask on the substrate, depositing a first layer on the substrate, and depositing a second layer on the substrate. The processing system can form layers of a photodiode in a low defect, cost effective, and high utilization manner.

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

Abstract: A flat drop cable has notches or other structures for enhancing the stripability of the jacket from a core of the flat drop cable. The notches can have an angled configuration with surfaces that converge as the notches extend into the jacket. Inner edges, or rounded valleys, at the bottoms of the notches can be positioned along a tear path that intersects the core of the flat drop cable at an angle relative to a major axis of the flat drop cable. For example, the notches can be offset from a minor axis of the flat drop cable a sufficient distance such that the notches are positioned outside a central boundary region that extends tangent to sides of the core and parallel to a minor axis of the flat drop cable. The shoulders of the notches, where the notches transition to an outer jacket wall, may also include a radius of curvature.

Abstract: The present disclosure relates to an apparatus for generating nanobubbles of a gas in a liquid, the apparatus including: (a) an outer tube; (b) a porous inner tube coaxially located within the outer tube that is at least partially occluded so as to define one or more liquid flow paths through the inner tube; (c) a pair of end assemblies attached to respective first and second ends of the outer tube, each end assembly having an opening in fluid communication with the one or more liquid flow paths so as to allow a flow of liquid in an axial direction through the apparatus; and, (d) a gas inlet for allowing a flow of gas into a chamber formed between the outer and inner tube, the flow of gas permitted to permeate through the porous inner tube into the one or more liquid flow paths, wherein, as the gas permeates through the porous inner tube, nanobubbles of gas are generated which become entrained in the liquid flow.

Abstract: 4-methylumbelliferone is useful for the treatment of autoimmune diseases, such as primary sclerosing cholangitis (PSC).

Abstract: A method and system for the ultrasonic non-destructive testing of joints in plastic pipes using A-scans. A hand-held ultrasonic transducer is used to perform an A-scan and a comparison made on a response from the interface region of the joint used to determine a quality of the joint. Levels of result can provide a binary output to give an indication of whether or not a defect is present in the joint. Comparison techniques are described. Tests for coupling efficiency and performance are described making the system useable by an unskilled technician. The system finds application in fault detection on electro-fusion welds in plastic pipe joints.

Abstract: A shopping analysis system captures, saves, and displays a number of variables related to a shopper's experience, including time spent shopping, path traveled within the store by shopper, specific areas visited within the store, time spent in a particular area of the store, total time spent in the store, items removed from shelves, items placed in cart and or basket or other carrying device, items put back on the shelves, items purchased. In embodiments, one or more wireless communication devices may be associated with shopping equipment to provide shopper data.

Abstract: Disclosures include a method for manufacturing a ball member usable in a flow control valve. The method comprises connecting a workpiece to a rotating apparatus along an axis of rotation of the workpiece, simultaneously rotating the workpiece about the axis of rotation and moving a rotating cutting tool toward the axis of rotation along a second axis to form a first curved surface having a progressively shorter radius with respect to the axis of rotation, wherein the second axis is generally oriented perpendicular to the axis of rotation, and cutting a bore through the workpiece, wherein one end of the bore extends through the first surface and the other end of the bore extends through the second surface.

Abstract: A flat drop cable has notches or other structures for enhancing the stripability of the jacket from a core of the flat drop cable. The notches can have an angled configuration with surfaces that converge as the notches extend into the jacket. Inner edges, or rounded valleys, at the bottoms of the notches can be positioned along a tear path that intersects the core of the flat drop cable at an angle relative to a major axis of the flat drop cable. For example, the notches can be offset from a minor axis of the flat drop cable a sufficient distance such that the notches are positioned outside a central boundary region that extends tangent to sides of the core and parallel to a minor axis of the flat drop cable. The shoulders of the notches, where the notches transition to an outer jacket wall, may also include a radius of curvature.