Patents by Inventor Kevin W. Hutto
Kevin W. Hutto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9666638Abstract: Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.Type: GrantFiled: April 19, 2016Date of Patent: May 30, 2017Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Kevin W. Hutto, Andrew Perkins, Marc Sulfridge
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Publication number: 20160233267Abstract: Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.Type: ApplicationFiled: April 19, 2016Publication date: August 11, 2016Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal BORTHAKUR, Kevin W. HUTTO, Andrew PERKINS, Marc SULFRIDGE
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Patent number: 9362330Abstract: Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.Type: GrantFiled: March 17, 2014Date of Patent: June 7, 2016Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Kevin W. Hutto, Andrew Perkins, Marc Sulfridge
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Patent number: 8987874Abstract: Microelectronic workpieces and methods for manufacturing microelectronic devices using such workpieces are disclosed. In one embodiment, a microelectronic assembly comprises a support member having a first side and a projection extending away from the first side. The assembly also includes a plurality of conductive traces at the first side of the support member. Some of the conductive traces include bond sites carried by the projection and having an outer surface at a first distance from the first side of the support member. The assembly further includes a protective coating deposited over the first side of the support member and at least a portion of the conductive traces. The protective coating is generally co-planar with the outer surface of the bond sites carried by the projection.Type: GrantFiled: July 22, 2013Date of Patent: March 24, 2015Assignee: Micron Technology, Inc.Inventor: Kevin W. Hutto
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Patent number: 8794050Abstract: A fluid sample analyzing system may be formed from an image sensor integrated circuit substrate. A glass wafer may be used to cover a wafer of image sensors. The glass wafer and the image sensor wafer may be attached using oxide bonding. Fluid channels may be formed in a layer that is interposed between the image sensor wafer and the glass wafer. The layer may be deposited on the image sensor wafer and the glass wafer prior to oxide bonding. A spacer may be used to deliver the fluid channel layer to the image sensor wafer before the glass wafer is bonded to the image sensor wafer. The spacer may be formed from a silicon wafer. The silicon wafer may be bonded to the image sensor wafer and thinned, leaving a thin spacer wafer layer on the image sensor wafer in which fluid channels may be formed.Type: GrantFiled: May 11, 2011Date of Patent: August 5, 2014Assignee: Nanoscopia (Cayman), Inc.Inventors: Kevin W. Hutto, Swarnal Borthakur
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Publication number: 20140197511Abstract: Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.Type: ApplicationFiled: March 17, 2014Publication date: July 17, 2014Applicant: Aptina Imaging CorporationInventors: Swarnal Borthakur, Kevin W. Hutto, Andrew Perkins, Marc Sulfridge
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Patent number: 8697473Abstract: Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.Type: GrantFiled: May 20, 2011Date of Patent: April 15, 2014Assignee: Aptina Imaging CorporationInventors: Swarnal Borthakur, Kevin W. Hutto, Andrew Perkins, Marc Sulfridge
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Publication number: 20130302941Abstract: Microelectronic workpieces and methods for manufacturing microelectronic devices using such workpieces are disclosed. In one embodiment, a microelectronic assembly comprises a support member having a first side and a projection extending away from the first side. The assembly also includes a plurality of conductive traces at the first side of the support member. Some of the conductive traces include bond sites carried by the projection and having an outer surface at a first distance from the first side of the support member. The assembly further includes a protective coating deposited over the first side of the support member and at least a portion of the conductive traces. The protective coating has a major outer surface at a second distance from the first side of the support member. The second distance is approximately the same as the first distance such that the outer surface of the protective coating is generally co-planar with the outer surface of the bond sites carried by the projection.Type: ApplicationFiled: July 22, 2013Publication date: November 14, 2013Applicant: Micron Technology, Inc.Inventor: Kevin W. Hutto
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Patent number: 8568535Abstract: Systems and methods for exposing semiconductor workpieces to vapors for through-hole cleaning and/or other processes are disclosed. A representative method includes exposing a semiconductor workpiece to a vapor, with the semiconductor workpiece having an opening extending from a first surface of the workpiece through the workpiece to a second surface facing opposite from the first surface. The opening can include a contaminant, and the method can further include drawing the vapor and the contaminant through at least a portion of the opening and away from the second surface of the semiconductor workpiece.Type: GrantFiled: June 29, 2012Date of Patent: October 29, 2013Assignee: Micron Technology, Inc.Inventor: Kevin W. Hutto
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Patent number: 8492198Abstract: Microelectronic workpieces and methods for manufacturing microelectronic devices using such workpieces are disclosed. In one embodiment, a microelectronic assembly comprises a support member having a first side and a projection extending away from the first side. The assembly also includes a plurality of conductive traces at the first side of the support member. Some of the conductive traces include bond sites carried by the projection and having an outer surface at a first distance from the first side of the support member. The assembly further includes a protective coating deposited over the first side of the support member and at least a portion of the conductive traces. The protective coating has a major outer surface at a second distance from the first side of the support member. The second distance is approximately the same as the first distance such that the outer surface of the protective coating is generally co-planar with the outer surface of the bond sites carried by the projection.Type: GrantFiled: April 15, 2011Date of Patent: July 23, 2013Assignee: Micron Technology, Inc.Inventor: Kevin W. Hutto
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Publication number: 20120270405Abstract: Systems and methods for exposing semiconductor workpieces to vapors for through-hole cleaning and/or other processes are disclosed. A representative method includes exposing a semiconductor workpiece to a vapor, with the semiconductor workpiece having an opening extending from a first surface of the workpiece through the workpiece to a second surface facing opposite from the first surface. The opening can include a contaminant, and the method can further include drawing the vapor and the contaminant through at least a portion of the opening and away from the second surface of the semiconductor workpiece.Type: ApplicationFiled: June 29, 2012Publication date: October 25, 2012Applicant: MICRON TECHNOLOGY, INC.Inventor: Kevin W. Hutto
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Publication number: 20120193741Abstract: Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.Type: ApplicationFiled: May 20, 2011Publication date: August 2, 2012Inventors: Swarnal Borthakur, Kevin W. Hutto, Andrew Perkins, Marc Sulfridge
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Publication number: 20120194669Abstract: A fluid sample analyzing system may be formed from an image sensor integrated circuit substrate. A glass wafer may be used to cover a wafer of image sensors. The glass wafer and the image sensor wafer may be attached using oxide bonding. Fluid channels may be formed in a layer that is interposed between the image sensor wafer and the glass wafer. The layer may be deposited on the image sensor wafer and the glass wafer prior to oxide bonding. A spacer may be used to deliver the fluid channel layer to the image sensor wafer before the glass wafer is bonded to the image sensor wafer. The spacer may be formed from a silicon wafer. The silicon wafer may be bonded to the image sensor wafer and thinned, leaving a thin spacer wafer layer on the image sensor wafer in which fluid channels may be formed.Type: ApplicationFiled: May 11, 2011Publication date: August 2, 2012Inventors: Kevin W. Hutto, Swarnal Borthakur
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Patent number: 8221557Abstract: Systems and methods for exposing semiconductor workpieces to vapors for through-hole cleaning and/or other processes are disclosed. A representative method includes exposing a semiconductor workpiece to a vapor, with the semiconductor workpiece having an opening extending from a first surface of the workpiece through the workpiece to a second surface facing opposite from the first surface. The opening can include a contaminant, and the method can further include drawing the vapor and the contaminant through at least a portion of the opening and away from the second surface of the semiconductor workpiece.Type: GrantFiled: July 6, 2007Date of Patent: July 17, 2012Assignee: Micron Technology, Inc.Inventor: Kevin W. Hutto
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Publication number: 20110212614Abstract: Microelectronic workpieces and methods for manufacturing microelectronic devices using such workpieces are disclosed. In one embodiment, a microelectronic assembly comprises a support member having a first side and a projection extending away from the first side. The assembly also includes a plurality of conductive traces at the first side of the support member. Some of the conductive traces include bond sites carried by the projection and having an outer surface at a first distance from the first side of the support member. The assembly further includes a protective coating deposited over the first side of the support member and at least a portion of the conductive traces. The protective coating has a major outer surface at a second distance from the first side of the support member. The second distance is approximately the same as the first distance such that the outer surface of the protective coating is generally co-planar with the outer surface of the bond sites carried by the projection.Type: ApplicationFiled: April 15, 2011Publication date: September 1, 2011Applicant: MICRON TECHNOLOGY, INC.Inventor: Kevin W. Hutto
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Patent number: 7928582Abstract: Microelectronic workpieces and methods for manufacturing microelectronic devices using such workpieces are disclosed. In one embodiment, a microelectronic assembly comprises a support member having a first side and a projection extending away from the first side. The assembly also includes a plurality of conductive traces at the first side of the support member. Some of the conductive traces include bond sites carried by the projection and having an outer surface at a first distance from the first side of the support member. The assembly further includes a protective coating deposited over the first side of the support member and at least a portion of the conductive traces. The protective coating has a major outer surface at a second distance from the first side of the support member. The second distance is approximately the same as the first distance such that the outer surface of the protective coating is generally co-planar with the outer surface of the bond sites carried by the projection.Type: GrantFiled: March 9, 2007Date of Patent: April 19, 2011Assignee: Micron Technology, Inc.Inventor: Kevin W. Hutto
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Publication number: 20090007934Abstract: Systems and methods for exposing semiconductor workpieces to vapors for through-hole cleaning and/or other processes are disclosed. A representative method includes exposing a semiconductor workpiece to a vapor, with the semiconductor workpiece having an opening extending from a first surface of the workpiece through the workpiece to a second surface facing opposite from the first surface. The opening can include a contaminant, and the method can further include drawing the vapor and the contaminant through at least a portion of the opening and away from the second surface of the semiconductor workpiece.Type: ApplicationFiled: July 6, 2007Publication date: January 8, 2009Applicant: Micron Technology, Inc.Inventor: Kevin W. Hutto
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Publication number: 20080217763Abstract: Microelectronic workpieces and methods for manufacturing microelectronic devices using such workpieces are disclosed. In one embodiment, a microelectronic assembly comprises a support member having a first side and a projection extending away from the first side. The assembly also includes a plurality of conductive traces at the first side of the support member. Some of the conductive traces include bond sites carried by the projection and having an outer surface at a first distance from the first side of the support member. The assembly further includes a protective coating deposited over the first side of the support member and at least a portion of the conductive traces. The protective coating has a major outer surface at a second distance from the first side of the support member. The second distance is approximately the same as the first distance such that the outer surface of the protective coating is generally co-planar with the outer surface of the bond sites carried by the projection.Type: ApplicationFiled: March 9, 2007Publication date: September 11, 2008Applicant: Micron Technology, Inc.Inventor: Kevin W. Hutto