Abstract: A semiconductor device for use in field emission displays includes a substrate formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material is formed on the substrate. A second layer of microcrystalline silicon is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters are formed on the second layer.

Abstract: A field emission display having a base plate which has a focus ring structure substantially planar with the extraction grid. The field emission display base plate is fabricated on a substrate having a cathode including an. emitter tip formed thereon by depositing a first insulating layer, a first conductive layer over the first insulating layer, etching the first conductive layer, depositing a second insulating layer over the etched first conductive layer, and depositing a second conductive or focus ring layer over the second insulating layer. A second selective etching may be formed to further define the gate and focus ring structures.

Abstract: A field emission display having a base plate which has a focus ring structure substantially planar with the extraction grid. The field emission display base plate is fabricated on a substrate having a cathode including an emitter tip formed thereon by depositing a first insulating layer, a first conductive layer over the first insulating layer, etching the first conductive layer, depositing a second insulating layer over the etched first conductive layer, and depositing a second conductive or focus ring layer over the second insulating layer. A second selective etching may be formed to further define the gate and focus ring structures.

Abstract: A field emission display having a base plate which has a focus ring structure substantially planar with the extraction grid. The field emission display base plate is fabricated on a substrate having a cathode including an emitter tip formed thereon by depositing a first insulating layer, a first conductive layer over the first insulating layer, etching the first conductive layer, depositing a second insulating layer over the etched first conductive layer, and depositing a second conductive or focus ring layer over the second insulating layer. A second selective etching may be formed to further define the gate and focus ring structures.

Abstract: A semiconductor device for use in field emission displays includes a substrate formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material is formed on the substrate. A second layer of microcrystalline silicon is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters are formed on the second layer.

Abstract: The present invention is a baseplate that has a supporting substrate with a primary surface upon which an array of emitters is formed. An insulator layer with a plurality of cavities aligned with respective emitters is disposed on the primary surface, and an extraction grid with a plurality of cavity openings aligned with respective emitters is deposited on the insulator layer. The extraction grid is made from a silicon based layer of material. A current control substrate formed from the silicon based layer of material of the extraction grid is provided such that the current control substrate is electrically isolated from the extraction grid and electrically connected to the emitters. The current control substrate has sufficient resistivity to limit the current from the emitters.

Abstract: A field emission display having a base plate which has a focus ring structure substantially planar with the extraction grid. The field emission display base plate is fabricated on a substrate having a cathode including an emitter tip formed thereon by depositing a first insulating layer, a first conductive layer over the first insulating layer, etching the first conductive layer, depositing a second insulating layer over the etched first conductive layer, and depositing a second conductive or focus ring layer over the second insulating layer. A second selective etching may be formed to further define the gate and focus ring structures.

Abstract: A semiconductor device for use in field emission displays includes a substrate formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material is formed on the substrate. A second layer of microcrystalline silicon is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters are formed on the second layer.