Abstract: A die thinning method includes providing a wafer (10) and depositing a substrate bonding material on the wafer. The die thinning method places a plurality of die (12) on the wafer (10), cures the substrate bonding material to secure the individual ICs to the base wafer (10), and covers the substrate (10) and the die (12) with a mask material. The substrate bonding material is BCB. The mask material is a photoresist (14). The method further back grinds the wafer to remove the wafer and to reduce the original die thickness from 26 mils to 5 mils. A UV transfer tape (22) is applied to the die (12) on a film frame (20). The mask material and back grinding tape (18) are then removed. The plurality of die (12), UV transfer tape (22), and film frame (20) are placed face down in a UV cure station. The UV transfer tape (22) is UV irradiated and the plurality of die (12) are removed from the UV transfer tape (22).

Abstract: An integrated circuit apparatus for facilitating the interconnection of one or more circuitry manufacture includes a carrier substrate defining a top surface and a bottom surface. Carrier substrate vias penetrate from the top surface to the bottom surface of the carrier substrate and define interior via surfaces. Carrier substrate cavities are formed on the top and/or bottom surfaces of the carrier substrate and define interior cavity surfaces. The carrier substrate is configured to receive one or more circuitry manufacture on the top and bottom surfaces, the interior via surfaces, and the interior cavity surfaces.