Abstract: A semiconductor device includes a first coil that is monolithically integrated in a first portion of a semiconductor body and that includes a first winding wrapping around a first core structure. A second coil is monolithically integrated in a second portion of the semiconductor body and includes a second winding wrapping around the second core structure. The first and second coils are magnetically coupled with each other. An insulator frame in the semiconductor body surrounds the first portion and excludes the second portion. High dielectric strength between the first and the second coils is achieved without patterning a backside metallization for connecting the turns of the windings and without being restricted to thin substrates.

Abstract: A power transistor model is described which comprises a source drain path, a first current source and a voltage controlled second current source in the source drain path which model the static voltage-current-relationship of a modeled power transistor, wherein the voltage-controlled second current source models a nonlinear behavior of a drift zone of the power transistor.

Abstract: One aspect of the invention relates to a semiconductor component with a semiconductor body with a top side and with a bottom side. A first coil that is monolithically integrated with the semiconductor body is arranged distant from the bottom side and comprises N first windings, wherein N?1. The first coil has a first coil axis that extends in a direction different from a surface normal of the bottom side.

Abstract: A semiconductor device includes a first coil that is monolithically integrated in a first portion of a semiconductor body and that includes a first winding wrapping around a first core structure. A second coil is monolithically integrated in a second portion of the semiconductor body and includes a second winding wrapping around the second core structure. The first and second coils are magnetically coupled with each other. An insulator frame in the semiconductor body surrounds the first portion and excludes the second portion. High dielectric strength between the first and the second coils is achieved without patterning a backside metallization for connecting the turns of the windings and without being restricted to thin substrates.

Abstract: One aspect of the invention relates to a semiconductor component with a semiconductor body with a top side and with a bottom side. A first coil that is monolithically integrated with the semiconductor body is arranged distant from the bottom side and comprises N first windings, wherein N?1. The first coil has a first coil axis that extends in a direction different from a surface normal of the bottom side.

Abstract: A coil apparatus includes a coil trace, a semiconductor substrate and a dielectric layer arranged on the semiconductor substrate, at least parts of the coil trace being arranged above a recess in the dielectric layer. The coil apparatus further includes a support apparatus arranged in the recess and connected to the coil trace for mechanically supporting the coil trace. The supporting apparatus is preferably a conductive column that is not removed when the recessed is formed in the dielectric layer.

Abstract: A coil apparatus includes a coil trace, a semiconductor substrate and a dielectric layer arranged on the semiconductor substrate, at least parts of the coil trace being arranged above a recess in the dielectric layer. The coil apparatus further includes a support apparatus arranged in the recess and connected to the coil trace for mechanically supporting the coil trace. The supporting apparatus is preferably a conductive column that is not removed when the recessed is formed in the dielectric layer.