Abstract: A monolithic multiferroic heterostructure fabricated using CSD (chemical solution deposition) is disclosed. The monolithic heterostructure includes a substrate, a ferromagnetic layer, a ferroelectric layer, and one or more seed layers that enhance crystallinity and promote high frequency performance.

Abstract: A monolithic multiferroic heterostructure fabricated using CSD (chemical solution deposition) is disclosed. The monolithic heterostructure includes a substrate, a ferromagnetic layer, a ferroelectric layer, and one or more seed layers that enhance crystallinity and promote high frequency performance.

Abstract: A nano-composite structure comprises of an amorphous matrix with embedded nano-crystallites. The nano-crystallites are precipitated from the amorphous matrix via heat treatment of a solution mixture of metal salts or metalorganic compounds to an appropriate temperature range and with a suitable duration, or heating of a mixture of non-crystalline compounds. The nano-crystallites are self-assembled in the amorphous matrix without forming agglomerates or distinguished grain boundaries. The nano-composite structure can be used for transparent display, transparent optical ceramics, protection armor, nuclear protection, pulsed power, high voltage electronics, high energy storage system and high power microwave systems.

Abstract: A nano-composite structure comprises of an amorphous matrix with embedded nano-crystallites. The nano-crystallites are precipitated from the amorphous matrix via heat treatment of a solution mixture of metal salts or metalorganic compounds to an appropriate temperature range and with a suitable duration, or heating of a mixture of non-crystalline compounds. The nano-crystallites are self-assembled in the amorphous matrix without forming agglomerates or distinguished grain boundaries. The nano-composite structure can be used for transparent display, transparent optical ceramics, protection armor, nuclear protection, pulsed power, high voltage electronics, high energy storage system and high power microwave systems.

Abstract: A heterostructure of multiferroics or magnetoelectrics (ME) was disclosed. The film has both ferromagnetic and ferroelectric properties, as well as magneto-optic (MO) and electro-optic (EO) properties. Oxide buffer layers were employed to allow grown a cracking-free heterostructure a solution coating method.

Abstract: The present invention provides a rare-earth ions doped, especially erbium and ytterbium doped transparent electro-optic gain ceramic material consisting lead, zirconium, titanium and lanthanum. The electro-optic gain ceramic material either has a linear electro-optic coefficient or a quadratic electro-optic coefficient, which is greater than about 0.3×10?16 m2/V2 for the latter, a propagation loss of less than about 0.3 dB/mm, and an optical gain of great than 1.5 dB/mm at a wavelength of about 1550 nm while optically pumped by a 1.4 watts diode laser at a wavelength of 970 nm at 20° C. The present invention also provides electro-optic devices including a rare-earth ions doped, especially erbium and ytterbium doped, transparent electro-optic gain ceramic material consisting lead, zirconium, titanium and lanthanum.

Abstract: The present invention provides a neodymium doped, transparent electro-optic gain ceramic material consisting lead, zirconium, titanium and lanthanum. The electro-optic gain ceramic material either has a linear electro-optic coefficient or a quadratic electro-optic coefficient, which is greater than about 0.3×10?16 m2/V2 for the latter, a propagation loss of less than about 0.3 dB/mm, and an optical gain of great than 2 dB/mm at a wavelength of about 1064 nm while optically pumped by a 2 watts diode laser at a wavelength of 802 nm at 20° C. The present invention also provides electro-optic devices including a neodymium doped, transparent electro-optic gain ceramic material consisting lead, zirconium, titanium and lanthanum. The present invention also provides lossless optical devices and amplifiers with an operating wavelength in the range of 1040 nm to 1100 nm while optically pumped at a wavelength in the range of 794 nm to 810 nm.

Abstract: The present invention provides a rare-earth ions doped, especially erbium and ytterbium doped transparent electro-optic gain ceramic material consisting lead, zirconium, titanium and lanthanum. The electro-optic gain ceramic material either has a linear electro-optic coefficient or a quadratic electro-optic coefficient, which is greater than about 0.3×10?16 m2/V2 for the latter, a propagation loss of less than about 0.3 dB/mm, and an optical gain of great than 1.5 dB/mm at a wavelength of about 1550 nm while optically pumped by a 1.4 watts diode laser at a wavelength of 970 nm at 20° C. The present invention also provides electro-optic devices including a rare-earth ions doped, especially erbium and ytterbium doped, transparent electro-optic gain ceramic material consisting lead, zirconium, titanium and lanthanum.

Abstract: A heterostructure of multiferroics or magnetoelectrics (ME) was disclosed. The film has both ferromagnetic and ferroelectric properties, as well as magneto-optic (MO) and electro-optic (EO) properties. Oxide buffer layers were employed to allow grown a cracking-free heterostructure a solution coating method.

Abstract: The present invention provides a neodymium doped, transparent electro-optic gain ceramic material consisting lead, zirconium, titanium and lanthanum. The electro-optic gain ceramic material either has a linear electro-optic coefficient or a quadratic electro-optic coefficient, which is greater than about 0.3×10?16 m2/V2 for the latter, a propagation loss of less than about 0.3 dB/mm, and an optical gain of great than 2 dB/mm at a wavelength of about 1064 nm while optically pumped by a 2 watts diode laser at a wavelength of 802 nm at 20° C. The present invention also provides electro-optic devices including a neodymium doped, transparent electro-optic gain ceramic material consisting lead, zirconium, titanium and lanthanum. The present invention also provides lossless optical devices and amplifiers with an operating wavelength in the range of 1040 nm to 1100 nm while optically pumped at a wavelength in the range of 794 nm to 810 nm.

Abstract: A modulator formed with a solid state electro-optic material having a pixellated structure interconnected to a circuit on a semiconductor substrate. Silicon CMOS integrated circuit that can include random access memories (RAMs) are used as a substrate and interfaced to solid state electro-optic materials coated thereon. In particular, the electro-optic modulators are controlled by RAM cells to produce a modulation of reflected light. SRAMs can be used with connection to the SRAM cell flip-flop. DRAMs can be used with the modulator replacing the DRAM storage capacitor. The SLM thus formed can be connected to a digital computer and controlled as if were a being written to as a memory, but other IC structures can also be used. In order to enhance the modulation effects, the electro-optic material is used as the spacer for a Fabry-Perot etalon structure that is also deposited on the semiconductor substrate. PLZT is a suitable electro-optic material.