Patents by Inventor KEYUAN DING

KEYUAN DING has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • THRESHOLD SWITCHING MATERIAL, THRESHOLD SWITCHING DEVICE AND PREPARATION METHOD THEREOF
    Publication number: 20240179920
    Abstract: A threshold switching material, a threshold switching device and a preparation method thereof are disclosed. The chemical formula of the threshold switching material is MxD1-x, wherein M is one of La, Ce, Gd, Lu, Sc, Y, Zr, Mo, Hf, W, Ta, D is one of S, Se, Te, and 0.1?x?0.8.
    Type: Application
    Filed: September 4, 2023
    Publication date: May 30, 2024
    Inventors: Feng Rao, Keyuan Ding, Jintao Chen
  • Phase change material for phase change memory and preparation method therefor
    Patent number: 10411187
    Abstract: A phase change material for a phase change memory and a preparing method thereof. The phase change material for a phase change memory has a chemical formula of Sc100-x-y-zGexSbyTez, wherein 0?x?60, 0?y?90, 0<z?65, 0<100-x-y-z<100. The phase change material for a phase change memory according to the present invention is capable of repeatedly changing phases. The Sc100-x-y-zGexSbyTez has two different resistance value states, i.e., a high resistance state and a low resistance state, and a reversible transformation between the high resistance state and the low resistance state can be achieved by being applied a pulse electrical signal thereto, which satisfies basic requirements of a storage material for the phase change memory.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: September 10, 2019
    Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCE
    Inventors: Feng Rao, Zhitang Song, Keyuan Ding, Yong Wang
  • PAHSE CHANG MATERIAL FOR PHASE CHANG MEMORY AND PREPARATION METHOD THEREFOR
    Publication number: 20180315921
    Abstract: A phase change material for a phase change memory and a preparing method thereof. The phase change material for a phase change memory has a chemical formula of Sc100-x-y-zGexSbyTez, wherein 0?x?60, 0?y?90, 0<z?65, 0<100-x-y-z<100. The phase change material for a phase change memory according to the present invention is capable of repeatedly changing phases. The Sc100-x-y-zGexSbyTez has two different resistance value states, i.e., a high resistance state and a low resistance state, and a reversible transformation between the high resistance state and the low resistance state can be achieved by being applied a pulse electrical signal thereto, which satisfies basic requirements of a storage material for the phase change memory.
    Type: Application
    Filed: August 23, 2016
    Publication date: November 1, 2018
    Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
    Inventors: FENG RAO, ZHITANG SONG, KEYUAN DING, YONG WANG