Patents by Inventor Khaled A. Elsheref
Khaled A. Elsheref has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8481422Abstract: A method and apparatus for treating a substrate is provided. A porous dielectric layer is formed on the substrate. In some embodiments, the dielectric may be capped by a dense dielectric layer. The dielectric layers are patterned, and a dense dielectric layer deposited conformally over the substrate. The dense conformal dielectric layer seals the pores of the porous dielectric layer against contact with species that may infiltrate the pores. The portion of the dense conformal pore-sealing dielectric layer covering the field region and bottom portions of the pattern openings is removed by directional selective etch.Type: GrantFiled: April 25, 2012Date of Patent: July 9, 2013Assignee: Applied Materials, Inc.Inventors: Kelvin Chan, Khaled A. Elsheref, Alexandros T. Demos, Mei-Yee Shek, Lipan Li, Li-Qun Xia, Kang Sub Yim
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Publication number: 20120208366Abstract: A method and apparatus for treating a substrate is provided. A porous dielectric layer is formed on the substrate. In some embodiments, the dielectric may be capped by a dense dielectric layer. The dielectric layers are patterned, and a dense dielectric layer deposited conformally over the substrate. The dense conformal dielectric layer seals the pores of the porous dielectric layer against contact with species that may infiltrate the pores. The portion of the dense conformal pore-sealing dielectric layer covering the field region and bottom portions of the pattern openings is removed by directional selective etch.Type: ApplicationFiled: April 25, 2012Publication date: August 16, 2012Applicant: Applied Materials, Inc.Inventors: Kelvin Chan, Khaled A. Elsheref, Alexandros T. Demos, Meiyee Shek, Lipan Li, Li-Qun Xia, Kang Sub Yim
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Patent number: 8236684Abstract: A method and apparatus for treating a substrate is provided. A porous dielectric layer is formed on the substrate. In some embodiments, the dielectric may be capped by a dense dielectric layer. The dielectric layers are patterned, and a dense dielectric layer deposited conformally over the substrate. The dense conformal dielectric layer seals the pores of the porous dielectric layer against contact with species that may infiltrate the pores. The portion of the dense conformal pore-sealing dielectric layer covering the field region and bottom portions of the pattern openings is removed by directional selective etch.Type: GrantFiled: June 27, 2008Date of Patent: August 7, 2012Assignee: Applied Materials, Inc.Inventors: Kelvin Chan, Khaled A. Elsheref, Alexandros T. Demos, Meiyee Shek, Lipan Li, Li-Qun Xia, Kang sub Yim
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Patent number: 7790583Abstract: One embodiment of the present invention is a method for cleaning an electron beam treatment apparatus that includes: (a) generating an electron beam that energizes a cleaning gas in a chamber of the electron beam treatment apparatus; (b) monitoring an electron beam current; (c) adjusting a pressure of the cleaning gas to maintain the electron beam current at a substantially constant value; and (d) stopping when a predetermined condition has been reached.Type: GrantFiled: October 26, 2007Date of Patent: September 7, 2010Assignee: Applied Materials, Inc.Inventors: Alexandros T. Demos, Khaled A. Elsheref, Josphine J. Chang, Hichem M'saad
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Patent number: 7777197Abstract: Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.Type: GrantFiled: June 22, 2006Date of Patent: August 17, 2010Assignee: Applied Materials, Inc.Inventors: Amir Al-Bayati, Lester A. D'Cruz, Alexandros T. Demos, Dale R. Dubois, Khaled A. Elsheref, Naoyuki Iwasaki, Hichem M'Saad, Juan Carlos Rocha-Alvarez, Ashish Shah, Takashi Shimizu
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Publication number: 20090325381Abstract: A method and apparatus for treating a substrate is provided. A porous dielectric layer is formed on the substrate. In some embodiments, the dielectric may be capped by a dense dielectric layer. The dielectric layers are patterned, and a dense dielectric layer deposited conformally over the substrate. The dense conformal dielectric layer seals the pores of the porous dielectric layer against contact with species that may infiltrate the pores. The portion of the dense conformal pore-sealing dielectric layer covering the field region and bottom portions of the pattern openings is removed by directional selective etch.Type: ApplicationFiled: June 27, 2008Publication date: December 31, 2009Inventors: KELVIN CHAN, Khaled A. Elsheref, Alexandros T. Demos, Meiyee Shek, Lipan Li, Li-Qun Xia, Kang sub Yim
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Patent number: 7547643Abstract: Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition.Type: GrantFiled: January 28, 2005Date of Patent: June 16, 2009Assignee: Applied Materials, Inc.Inventors: Francimar Schmitt, Alexandros T. Demos, Derek R. Witty, Hichem M'Sadd, Sang H. Ahn, Lester A. D'Cruz, Khaled A. Elsheref, Zhenjiang Cui
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Patent number: 7425716Abstract: Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.Type: GrantFiled: April 27, 2006Date of Patent: September 16, 2008Assignee: Applied Materials, Inc.Inventors: Alexandros T. Demos, Khaled A. Elsheref, Yuri Trachuk, Tom K. Cho, Girish A. Dixit, Hichem M'Saad, Derek Witty
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Patent number: 7323399Abstract: One embodiment of the present invention is a method for cleaning an electron beam treatment apparatus that includes: (a) generating an electron beam that energizes a cleaning gas in a chamber of the electron beam treatment apparatus; (b) monitoring an electron beam current; (c) adjusting a pressure of the cleaning gas to maintain the electron beam current at a substantially constant value; and (d) stopping when a predetermined condition has been reached.Type: GrantFiled: February 20, 2004Date of Patent: January 29, 2008Assignee: Applied Materials, Inc.Inventors: Alexandros T. Demos, Khaled A. Elsheref, Josphine J. Chang, Hichem M'saad
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Publication number: 20060289795Abstract: Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber; and a heating device in communication with the vacuum chamber and combinations thereof are provided. In one embodiment, the vacuum chamber comprises a cathode, an anode, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.Type: ApplicationFiled: May 15, 2006Publication date: December 28, 2006Inventors: Dale Dubois, Juan Rocha-Alvarez, Amir Al-Bayati, Khaled Elsheref, Alexandros Demos, Lester D'Cruz, Hichem M'Saad, Ashish Shah, Takashi Shimizu, Naoyuki Iwasaki
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Publication number: 20060272772Abstract: Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.Type: ApplicationFiled: June 22, 2006Publication date: December 7, 2006Inventors: Amir Al-Bayati, Lester D'Cruz, Alexandros Demos, Dale Dubois, Khaled Elsheref, Naoyuki Iwasaki, Hichem M'Saad, Juan Rocha-Alvarez, Ashish Shah, Takashi Shimizu
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Publication number: 20060192150Abstract: Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.Type: ApplicationFiled: April 27, 2006Publication date: August 31, 2006Applicant: Applied Materials, Inc.Inventors: Alexandros Demos, Khaled Elsheref, Yuri Trachuk, Tom Cho, Girish Dixit, Hichem M'Saad, Derek Witty
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Patent number: 7045798Abstract: One embodiment of the present invention is a method for characterizing an electron beam treatment apparatus that includes: (a) e-beam treating one or more of a predetermined type of wafer or substrate utilizing one or more sets of electron beam treatment para meters; (b) making post-electron beam treatment measurements of intensity of a probe beam reflected from the surface of the one or more wafers in which thermal and/or plasma waves have been induced; and (c) developing data from the post-electron beam treatment measurements that provide insight into performance of the electron beam treatment apparatus.Type: GrantFiled: February 20, 2004Date of Patent: May 16, 2006Assignee: Applied Materials, Inc.Inventors: Khaled A. Elsheref, Alexandros T. Demos, Hichem M'saad
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Publication number: 20050233591Abstract: Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition.Type: ApplicationFiled: January 28, 2005Publication date: October 20, 2005Applicant: Applied Materials, Inc.Inventors: Francimar Schmitt, Alexandros Demos, Derek Witty, Hichem M'Sadd, Sang Ahn, Lester D'Cruz, Khaled Elsheref, Zhenjiang Cui
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Publication number: 20050224722Abstract: Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.Type: ApplicationFiled: December 1, 2004Publication date: October 13, 2005Applicant: APPLIED MATERIALS, INC.Inventors: Alexandros Demos, Khaled Elsheref, Yuri Trachuk, Tom Cho, Girish Dixit, Hichem M'Saad, Derek Witty
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Publication number: 20050184257Abstract: One embodiment of the present invention is a method for characterizing an electron beam treatment apparatus that includes: (a) e-beam treating one or more of a predetermined type of wafer or substrate utilizing one or more sets of electron beam treatment parameters; (b) making post-electron beam treatment measurements of intensity of a probe beam reflected from the surface of the one or more wafers in which thermal and/or plasma waves have been induced; and (c) developing data from the post-electron beam treatment measurements that provide insight into performance of the electron beam treatment apparatus.Type: ApplicationFiled: February 20, 2004Publication date: August 25, 2005Inventors: Khaled Elsheref, Alexandros Demos, Hichem M'saad
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Patent number: 6878644Abstract: A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; curing the layer of spin-on glass material by exposing the spin-on glass material to electron beam radiation at a first temperature for a first period and subsequently exposing the spin-on glass material to an electron beam at a second temperature for a second period, where the second temperature is greater than the first temperature. The method concludes by depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.Type: GrantFiled: May 6, 2003Date of Patent: April 12, 2005Assignee: Applied Materials, Inc.Inventors: Zhenjiang Cui, Rick J. Roberts, Michael S. Cox, Jun Zhao, Khaled Elsheref, Alexandros T. Demos
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Publication number: 20040224479Abstract: A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; curing the layer of spin-on glass material by exposing the spin-on glass material to electron beam radiation at a first temperature for a first period and subsequently exposing the spin-on glass material to an electron beam at a second temperature for a second period, where the second temperature is greater than the first temperature. The method concludes by depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.Type: ApplicationFiled: May 6, 2003Publication date: November 11, 2004Applicant: Applied Materials, Inc.Inventors: Zhenjiang Cui, Rick J. Roberts, Michael S. Cox, Jun Zhao, Khaled Elsheref, Alexandros T. Demos
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Publication number: 20040159638Abstract: One embodiment of the present invention is a method for cleaning an electron beam treatment apparatus that includes: (a) generating an electron beam that energizes a cleaning gas in a chamber of the electron beam treatment apparatus; (b) monitoring an electron beam current; (c) adjusting a pressure of the cleaning gas to maintain the electron beam current at a substantially constant value; and (d) stopping when a predetermined condition has been reached.Type: ApplicationFiled: February 20, 2004Publication date: August 19, 2004Applicant: Applied Materials, Inc.Inventors: Alexandros T. Demos, Khaled A. Elsheref, Josphine J. Chang, Hichem M'saad