Patents by Inventor Khaled Nabil Salama

Khaled Nabil Salama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200335162
    Abstract: In accordance with the present disclosure, one embodiment includes a memristor that is caused to be in a particular resistance state by a voltage applied across terminals of the memristor. A first logical input and a second logical input that are below a threshold voltage of the memristor are applied to a first terminal of the memristor. A first control input and a second control input are applied to a second terminal of the memristor. A logical output is determined based on a resistance state of the memristor.
    Type: Application
    Filed: July 7, 2020
    Publication date: October 22, 2020
    Inventors: Rawan NAOUS, Khaled Nabil SALAMA
  • Patent number: 10748609
    Abstract: In accordance with the present disclosure, one embodiment includes a memristor that is caused to be in a particular resistance state by a voltage applied across terminals of the memristor. A first logical input and a second logical input that are below a threshold voltage of the memristor are applied to a first terminal of the memristor. A first control input and a second control input are applied to a second terminal of the memristor. A logical output is determined based on a resistance state of the memristor.
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: August 18, 2020
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Rawan Naous, Khaled Nabil Salama
  • Publication number: 20200194066
    Abstract: In accordance with the present disclosure, one embodiment includes a memristor that is caused to be in a particular It resistance state by a voltage applied across terminals of the memristor. A first logical input and a second logical input that are below a threshold voltage of the memristor are applied to a first terminal of the memristor. A first control input and a second control input are applied to a second terminal of the memristor. A logical output is determined based on a resistance state of the memristor.
    Type: Application
    Filed: April 10, 2018
    Publication date: June 18, 2020
    Inventors: Rawan NAOUS, Khaled Nabil SALAMA
  • Patent number: 10559443
    Abstract: A microelectromechanical system (MEMS) switch with liquid dielectric and a method of fabrication thereof are provided. In the context of the MEMS switch, a MEMS switch is provided including a cantilevered source switch, a first actuation gate disposed parallel to the cantilevered source switch, a first drain disposed parallel to a movable end of the cantilevered source switch, and a liquid dielectric disposed within a housing of the microelectromechanical system switch.
    Type: Grant
    Filed: June 14, 2016
    Date of Patent: February 11, 2020
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Mohammed Affan Zidan, Jurgen Kosel, Khaled Nabil Salama
  • Patent number: 10340007
    Abstract: Various examples are provided examples related to resistive content addressable memory (RCAM) based in-memory computation architectures. In one example, a system includes a content addressable memory (CAM) including an array of cells having a memristor based crossbar and an interconnection switch matrix having a gateless memristor array, which is coupled to an output of the CAM. In another example, a method, includes comparing activated bit values stored a key register with corresponding bit values in a row of a CAM, setting a tag bit value to indicate that the activated bit values match the corresponding bit values, and writing masked key bit values to corresponding bit locations in the row of the CAM based on the tag bit value.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: July 2, 2019
    Assignees: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY, THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Khaled Nabil Salama, Mohammed Affan Zidan, Fadi J. Kurdahi, Ahmed Eltawil, Hasan Erdem Yantir
  • Patent number: 10340001
    Abstract: Methods are provided for mitigating problems caused by sneak-paths current during memory cell access in gateless arrays. Example methods contemplated herein utilize adaptive-threshold readout techniques that utilize the locality and hierarchy properties of the computer memory system to address this sneak-paths problem. The method of the invention is a method for reading a target memory cell located at an intersection of a target row of a gateless array and a target column of the gateless array, the method comprising: —reading a value of the target memory cell; and—calculating an actual value of the target memory cell based on the read value of the memory cell and a component of the read value caused by sneak path current. Utilizing either an “initial bits” strategy or a “dummy bits” strategy in order to calculate the component of the read value caused by sneak path current, example embodiments significantly reduce the number of memory accesses pixel for an array readout.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: July 2, 2019
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Mohammed Affan Zidan, Hesham Omran, Rawan Naous, Ahmed Sultan Salem, Khaled Nabil Salama
  • Patent number: 10312743
    Abstract: Various examples are provided related to radio frequency (RF) to direct current (DC) power conversion. In one example, a RF-to-DC converter includes a fully cross-coupled rectification circuit including a pair of forward rectifying transistors and a feedback circuit configured to provide feedback bias signals to gates of the pair of forward rectifying transistors via feedback branch elements. In another example, a method includes receiving a radio frequency (RF) signal; rectifying the RF signal via a fully cross-coupled rectification circuit including a pair of forward rectifying transistors; and providing a DC output voltage from an output connection of the fully cross-coupled rectification circuit, where gating of the pair of forward rectifying transistors is controlled by feedback bias signals provided to gates of the pair of forward rectifying transistors via feedback branch elements.
    Type: Grant
    Filed: May 26, 2016
    Date of Patent: June 4, 2019
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Mahmoud Hamdy Ouda, Khaled Nabil Salama
  • Patent number: 10297318
    Abstract: A method for readout of a gated memristor array, a memristor array readout circuit and method of fabrication thereof are provided. In the context of the method, the method includes selecting a row of a memristor array associated with a desired cell, measuring the value of the selected memristor row, and selecting a column of a memristor array associated with the desired cell. The selection of the column and selection of the row selects the desired cell. The method also includes measuring the value of the memristor selected row with the selected desired cell and determining the value of the desired cell based on the value of the selected memristor row and the value of the selected memristor row with the selected desired cell.
    Type: Grant
    Filed: June 15, 2016
    Date of Patent: May 21, 2019
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Mohammed Affan Zidan, Hesham Omran, Ahmed Sultan Salem, Khaled Nabil Salama
  • Publication number: 20180372664
    Abstract: Methods of fabricating devices vial selective laser etching are provided. The methods can include selective laser etching of a portion of a metal layer, e.g. using a laser light source having a wavelength of 1,000 nm to 1,500 nm. The methods can be used to fabricate a variety of features, including an electrode, an interconnect, a channel, a reservoir, a contact hole, a trench, a pad, or a combination thereof. A variety of devices fabricated according to the methods are also provided. In some aspects, capacitive humidity sensors are provided that can be fabricated according to the provided methods. The capacitive humidity sensors can be fabricated with intricate electrodes, e.g. having a fractal pattern such as a Peano curve, a Hilbert curve, a Moore curve, or a combination thereof.
    Type: Application
    Filed: July 1, 2016
    Publication date: December 27, 2018
    Applicants: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY, KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Ulrich BUTTNER, Khaled Nabil SALAMA, Christos SAPSANIS
  • Publication number: 20180233196
    Abstract: Methods are provided for mitigating problems caused by sneak-paths current during memory cell access in gateless arrays. Example methods contemplated herein utilize adaptive-threshold readout techniques that utilize the locality and hierarchy properties of the computer memory system to address this sneak-paths problem. The method of the invention is a method for reading a target memory cell located at an intersection of a target row of a gateless array and a target column of the gateless array, the method comprising: —reading a value of the target memory cell; and —calculating an actual value of the target memory cell based on the read value of the memory cell and a component of the read value caused by sneak path current. Utilizing either an “initial bits” strategy or a “dummy bits” strategy in order to calculate the component of the read value caused by sneak path current, example embodiments significantly reduce the number of memory accesses pixel for an array readout.
    Type: Application
    Filed: August 23, 2016
    Publication date: August 16, 2018
    Inventors: Mohammed Affan Zidan, Hesham Omran, Rawan Naous, Ahmed Sultan Salem, Khaled Nabil Salama
  • Publication number: 20180174788
    Abstract: A microelectromechanical system (MEMS) switch with liquid dielectric and a method of fabrication thereof are provided. In the context of the MEMS switch, a MEMS switch is provided including a cantilevered source switch, a first actuation gate disposed parallel to the cantilevered source switch, a first drain disposed parallel to a movable end of the cantilevered source switch, and a liquid dielectric disposed within a housing of the microelectromechanical system switch.
    Type: Application
    Filed: June 14, 2016
    Publication date: June 21, 2018
    Inventors: Mohammed Affan Zidan, Jurgen Kosel, Khaled Nabil Salama
  • Publication number: 20180166134
    Abstract: A method for readout of a gated memristor array, a memristor array readout circuit and method of fabrication thereof are provided. In the context of the method, the method includes selecting a row of a memristor array associated with a desired cell, measuring the value of the selected memristor row, and selecting a column of a memristor array associated with the desired cell. The selection of the column and selection of the row selects the desired cell. The method also includes measuring the value of the memristor selected row with the selected desired cell and determining the value of the desired cell based on the value of the selected memristor row and the value of the selected memristor row with the selected desired cell.
    Type: Application
    Filed: June 15, 2016
    Publication date: June 14, 2018
    Inventors: Mohammed Affan Zidan, Hesham Omran, Ahmed Sultan Salem, Khaled Nabil Salama
  • Publication number: 20180137916
    Abstract: Various examples are provided examples related to resistive content addressable memory (RCAM) based in-memory computation architectures. In one example, a system includes a content addressable memory (CAM) including an array of cells having a memristor based crossbar and an interconnection switch matrix having a gateless memristor array, which is coupled to an output of the CAM. In another example, a method, includes comparing activated bit values stored a key register with corresponding bit values in a row of a CAM, setting a tag bit value to indicate that the activated bit values match the corresponding bit values, and writing masked key bit values to corresponding bit locations in the row of the CAM based on the tag bit value.
    Type: Application
    Filed: June 3, 2016
    Publication date: May 17, 2018
    Inventors: Khaled Nabil SALAMA, Mohammed Affan ZIDAN, Fadi J. KURDAHI, Ahmed ELTAWIL
  • Publication number: 20180069486
    Abstract: Various examples are provided related to radio frequency (RF) to direct current (DC) power conversion. In one example, a RF-to-DC converter includes a fully cross-coupled rectification circuit including a pair of forward rectifying transistors and a feedback circuit configured to provide feedback bias signals to gates of the pair of forward rectifying transistors via feedback branch elements. In another example, a method includes receiving a radio frequency (RF) signal; rectifying the RF signal via a fully cross-coupled rectification circuit including a pair of forward rectifying transistors; and providing a DC output voltage from an out put connection of the fully cross-coupled rectification circuit, where gating of the pair of forward rectifying transistors is controlled by feedback bias signals provided to gates of the pair of forward rectifying transistors via feedback branch elements.
    Type: Application
    Filed: May 26, 2016
    Publication date: March 8, 2018
    Inventors: Mahmoud Hamdy OUDA, Khaled Nabil SALAMA
  • Patent number: 9614024
    Abstract: In accordance with the present disclosure, one embodiment of a fractal variable capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure, wherein the capacitor body has an upper first metal plate with a fractal shape separated by a vertical distance from a lower first metal plate with a complementary fractal shape; and a substrate above which the capacitor body is suspended.
    Type: Grant
    Filed: August 21, 2012
    Date of Patent: April 4, 2017
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Amro M. Elshurafa, Ahmed Gomaa Ahmed Radwan, Ahmed A. Emira, Khaled Nabil Salama
  • Patent number: 9600238
    Abstract: Various embodiments are provided for fully digital chaotic differential equation-based systems and methods. In one embodiment, among others, a digital circuit includes digital state registers and one or more digital logic modules configured to obtain a first value from two or more of the digital state registers; determine a second value based upon the obtained first values and a chaotic differential equation; and provide the second value to set a state of one of the plurality of digital state registers. In another embodiment, a digital circuit includes digital state registers, digital logic modules configured to obtain outputs from a subset of the digital shift registers and to provide the input based upon a chaotic differential equation for setting a state of at least one of the subset of digital shift registers, and a digital clock configured to provide a clock signal for operating the digital shift registers.
    Type: Grant
    Filed: February 29, 2012
    Date of Patent: March 21, 2017
    Assignee: King Abdullah University of Science and Technology (KAUST)
    Inventors: Ahmed Gomaa Ahmed Radwan, Mohammed Affan Zidan, Khaled Nabil Salama
  • Patent number: 9349786
    Abstract: An embodiment of a fractal fixed capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure. The capacitor body has a first plate with a fractal shape separated by a horizontal distance from a second plate with a fractal shape. The first plate and the second plate are within the same plane. Such a fractal fixed capacitor further comprises a substrate above which the capacitor body is positioned.
    Type: Grant
    Filed: August 17, 2012
    Date of Patent: May 24, 2016
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Amro M. Elshurafa, Ahmed Gomaa Ahmed Radwan, Ahmed A. Emira, Khaled Nabil Salama
  • Patent number: 9304740
    Abstract: Various methods and systems related to chaos-based pseudo-random number generation are presented. In one example, among others, a system includes a pseudo-random number generator (PRNG) to generate a series of digital outputs and a nonlinear post processing circuit to perform an exclusive OR (XOR) operation on a first portion of a current digital output of the PRNG and a permutated version of a corresponding first portion of a previous post processed output to generate a corresponding first portion of a current post processed output. In another example, a method includes receiving at least a first portion of a current output from a PRNG and performing an XOR operation on the first portion of the current PRNG output with a permutated version of a corresponding first portion of a previous post processed output to generate a corresponding first portion of a current post processed output.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: April 5, 2016
    Assignee: King Abdullah University of Science and Technology
    Inventors: Mohamed L. Barakat, Abhinav S. Mansingka, Ahmed Gomaa Ahmed Radwan, Khaled Nabil Salama
  • Patent number: 9306450
    Abstract: Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.
    Type: Grant
    Filed: August 24, 2012
    Date of Patent: April 5, 2016
    Assignee: King Abdullah University of Science and Technology
    Inventors: Ahmed A. Emira, Mohamed Abdelghany, Mohannad Yomn Elsayed, Amro M. Elshurafa, Khaled Nabil Salama
  • Patent number: 8860607
    Abstract: An apparatus, system, and method for Gain Enhanced LTCC System-on-Package radar sensor. The sensor includes a substrate and an integrated circuit coupled to the substrate, where the integrated circuit is configured to transmit and receive radio frequency (RF) signals. An antenna may be coupled to the integrated circuit and a lens may be coupled to the antenna. The lens may be configured to enhance the gain of the sensor.
    Type: Grant
    Filed: August 9, 2011
    Date of Patent: October 14, 2014
    Assignee: King Abdullah University of Science and Technology
    Inventors: Atif Shamim, Farhan Abdul Ghaffar, Muhammad Umair Khalid, Khaled Nabil Salama