Patents by Inventor Khalid Hassan
Khalid Hassan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8970186Abstract: A voltage conversion circuit apparatus that adjusts a timing skew between the switching control of the first switching element and the switching control of the second switching element includes: a skew storage portion that stores a timing skew between the switching controls of the first and second switching elements after the voltage conversion circuit apparatus is manufactured; and a timing adjustment portion that corrects the stored timing skew and thereby adjusts the timing relation between a first pulse signal and a second pulse signal so as to bring within a permissible range the timing skew that occurs when the switching controls of the first and second switching elements are performed by using the first pulse signal and the second pulse signal.Type: GrantFiled: June 1, 2011Date of Patent: March 3, 2015Assignees: Toyota Jidosha Kabushiki Kaisha, Mitsubishi Electric CorporationInventors: Kota Manabe, Takahiko Hasegawa, Tomohiko Kaneko, Khalid Hassan Hussein, Shinji Hatae
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Publication number: 20140237695Abstract: A face mask system for effectively dispensing a medication and/or scented material to a user. The face mask system generally includes a face mask with a medication and/or scented material that is dispensed to a wearer of the face mask via the air breathed into the respiratory system. The medication is dispensed via a medicated cover that is removably attached to the face mask. Alternatively, medicated strips are attached to the face mask to dispense the medication to the wearer of the face mask. One or more deflectors are attached to an upper portion of the face mask to deflect the medication from contacting the eyes of the wearer when worn at daytime.Type: ApplicationFiled: February 25, 2013Publication date: August 28, 2014Inventor: Khalid Hassan Al Malki
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Patent number: 8810984Abstract: A gate circuit includes a gate resistive element connected at one end to the gate of a power device, an on-switching device connected between a power supply and the other end of the gate resistive element, a first resistive element whose connection to the gate is controlled by a first switching device, a second resistive element whose connection to the gate is controlled by a second switching device, and having a higher resistance value than the first resistive element, excessive current suppression means for turning on the first switching device just when the current in the power device reaches a predetermined value, and turn-off delay means for, after the excessive current suppression means turns on the first switching device, turning off the on-switching device and the first switching device and turning on the second switching device to turn off the power device.Type: GrantFiled: December 7, 2011Date of Patent: August 19, 2014Assignee: Mitsubishi Electric CorporationInventors: Khalid Hassan Hussein, Akira Yamamoto, Fumio Wada
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Patent number: 8766702Abstract: A power semiconductor device includes first and second power semiconductor elements connected in parallel to each other and a drive control unit. The drive control unit turns on or off each of the first and second power semiconductor elements in response to an ON instruction and an OFF instruction repeatedly received from outside. Specifically, the drive control unit can switch between a case where the first and second power semiconductor elements are simultaneously turned on and a case where one of the first and second power semiconductor elements is turned on first and thereafter the other thereof is turned on, in response to the ON instruction. The drive control unit turns off one of the first and second power semiconductor elements first and thereafter turns off the other thereof, in response to the OFF instruction.Type: GrantFiled: April 5, 2012Date of Patent: July 1, 2014Assignee: Mitsubishi Electric CorporationInventors: Khalid Hassan Hussein, Toshiyuki Kumagai, Shoji Saito
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Patent number: 8749047Abstract: A power module includes a first semiconductor device having a collector terminal and an emitter terminal which extend outwardly from a molded resin, wherein at least one of the collector and emitter terminals is a bilaterally extending terminal extending outwardly from two opposite surfaces of the molded resin, and a second semiconductor device having the same construction as the first semiconductor device. The bilaterally extending terminal of the first semiconductor device is connected to a bilaterally extending terminal of the second semiconductor device.Type: GrantFiled: December 2, 2011Date of Patent: June 10, 2014Assignee: Mitsubishi Electric CorporationInventors: Shintaro Araki, Korehide Okamoto, Khalid Hassan Hussein, Mitsunori Aiko
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Patent number: 8710646Abstract: A power module includes a first semiconductor device having a collector terminal and an emitter terminal which extend outwardly from a molded resin, wherein at least one of the collector and emitter terminals is a bilaterally extending terminal extending outwardly from two opposite surfaces of the molded resin, and a second semiconductor device having the same construction as the first semiconductor device. The bilaterally extending terminal of the first semiconductor device is connected to a bilaterally extending terminal of the second semiconductor device.Type: GrantFiled: December 2, 2011Date of Patent: April 29, 2014Assignee: Mitsubishi Electric CorporationInventors: Shintaro Araki, Korehide Okamoto, Khalid Hassan Hussein, Mitsunori Aiko
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Patent number: 8614566Abstract: Provided is a DC-DC converter capable of reducing not only a turn-off loss but also a turn-on loss. A snubber capacitor has one end connected to an anode of a step-up diode, a current input end of a step-up switching element and a main reactor. A first snubber diode has a cathode connected to other end of the snubber capacitor, and an anode connected to a cathode of the step-up diode. A second snubber diode has an anode connected to the cathode of the first snubber diode and other end of the snubber capacitor. A snubber reactor has one end connected to the anode of the first snubber diode, and other end connected to a cathode of the second snubber diode.Type: GrantFiled: July 14, 2011Date of Patent: December 24, 2013Assignee: Mitsubishi Electric CorporationInventors: Shinji Hatae, Khalid Hassan Hussein
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Publication number: 20130119968Abstract: A voltage conversion circuit apparatus that adjusts a timing skew between the switching control of the first switching element and the switching control of the second switching element includes: a skew storage portion that stores a timing skew between the switching controls of the first and second switching elements after the voltage conversion circuit apparatus is manufactured; and a timing adjustment portion that corrects the stored timing skew and thereby adjusts the timing relation between a first pulse signal and a second pulse signal so as to bring within a permissible range the timing skew that occurs when the switching controls of the first and second switching elements are performed by using the first pulse signal and the second pulse signal.Type: ApplicationFiled: June 1, 2011Publication date: May 16, 2013Applicants: MITSUBISHI ELECTRIC CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Kota Manabe, Takahiko Hasegawa, Tomohiko Kaneko, Khalid Hassan Hussein, Shinji Hatae
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Patent number: 8350319Abstract: A semiconductor device includes a gate pad, a gate wiring conductor connected to the gate pad, and a gate electrode formed under the gate pad and the gate wiring conductor. Portions of the gate electrode closer to the gate pad have a higher resistance per unit area than portions of the gate electrode farther away from the gate pad.Type: GrantFiled: April 1, 2011Date of Patent: January 8, 2013Assignee: Mitsubishi Electric CorporationInventors: Shigeto Fujita, Khalid Hassan Hussein, Junichi Yamashita, Hisao Kondo
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Publication number: 20120286288Abstract: A semiconductor device includes a semiconductor element including a first element portion having a first gate and a second element portion having a second gate, wherein the turning on and off of the first and second element portions are controlled by a signal from the first and second gates respectively. The semiconductor device further includes signal transmission means connected to the first gate and the second gate and transmitting a signal to the first gate and the second gate so that when the semiconductor element is to be turned on, the first element portion and the second element portion are simultaneously turned on, and so that when the semiconductor element is to be turned off, the second element portion is turned off a delay time after the first element portion is turned off.Type: ApplicationFiled: February 10, 2012Publication date: November 15, 2012Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Khalid Hassan HUSSEIN, Shoji SAITO
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Publication number: 20120280728Abstract: A power semiconductor device includes first and second power semiconductor elements connected in parallel to each other and a drive control unit. The drive control unit turns on or off each of the first and second power semiconductor elements in response to an ON instruction and an OFF instruction repeatedly received from outside. Specifically, the drive control unit can switch between a case where the first and second power semiconductor elements are simultaneously turned on and a case where one of the first and second power semiconductor elements is turned on first and thereafter the other thereof is turned on, in response to the ON instruction. The drive control unit turns off one of the first and second power semiconductor elements first and thereafter turns off the other thereof, in response to the OFF instruction.Type: ApplicationFiled: April 5, 2012Publication date: November 8, 2012Applicant: Mitsubishi Electric CorporationInventors: Khalid Hassan HUSSEIN, Toshiyuki Kumagai, Shoji Saito
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Publication number: 20120228741Abstract: A power module includes a first semiconductor device having a collector terminal and an emitter terminal which extend outwardly from a molded resin, wherein at least one of the collector and emitter terminals is a bilaterally extending terminal extending outwardly from two opposite surfaces of the molded resin, and a second semiconductor device having the same construction as the first semiconductor device. The bilaterally extending terminal of the first semiconductor device is connected to a bilaterally extending terminal of the second semiconductor device.Type: ApplicationFiled: December 2, 2011Publication date: September 13, 2012Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Shintaro ARAKI, Korehide Okamoto, Khalid Hassan Hussein, Mitsunori Aiko
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Publication number: 20120229942Abstract: A gate circuit includes a gate resistive element connected at one end to the gate of a power device, an on-switching device connected between a power supply and the other end of the gate resistive element, a first resistive element whose connection to the gate is controlled by a first switching device, a second resistive element whose connection to the gate is controlled by a second switching device, and having a higher resistance value than the first resistive element, excessive current suppression means for turning on the first switching device just when the current in the power device reaches a predetermined value, and turn-off delay means for, after the excessive current suppression means turns on the first switching device, turning off the on-switching device and the first switching device and turning on the second switching device to turn off the power device.Type: ApplicationFiled: December 7, 2011Publication date: September 13, 2012Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Khalid Hassan HUSSEIN, Akira YAMAMOTO, Fumio WADA
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Publication number: 20120068678Abstract: Provided is a DC-DC converter capable of reducing not only a turn-off loss but also a turn-on loss. A snubber capacitor has one end connected to an anode of a step-up diode, a current input end of a step-up switching element and a main reactor. A first snubber diode has a cathode connected to other end of the snubber capacitor, and an anode connected to a cathode of the step-up diode. A second snubber diode has an anode connected to the cathode of the first snubber diode and other end of the snubber capacitor. A snubber reactor has one end connected to the anode of the first snubber diode, and other end connected to a cathode of the second snubber diode.Type: ApplicationFiled: July 14, 2011Publication date: March 22, 2012Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Shinji HATAE, Khalid Hassan HUSSEIN
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Publication number: 20120012947Abstract: A semiconductor device includes a gate pad, a gate wiring conductor connected to the gate pad, and a gate electrode formed under the gate pad and the gate wiring conductor. Portions of the gate electrode closer to the gate pad have a higher resistance per unit area than portions of the gate electrode farther away from the gate pad.Type: ApplicationFiled: April 1, 2011Publication date: January 19, 2012Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Shigeto FUJITA, Khalid Hassan Hussein, Junichi Yamashita, Hisao Kondo
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Patent number: 7436672Abstract: A transfer mold type power module (“TPM”) is provided with a projection at each of the four corners on its front main surface. The TPM is also provided a first screw hole at its center. A shielding plate is provided with a second crew hole in a position that corresponds to the first screw hole. A control substrate is provided with third screw holes in positions that correspond to the projections. The shielding plate and the TPM are joined by putting a first screw through the first and second screw holes and temporarily fastening the tip of the first screw by a temporary fastening member at the rear main surface of the TPM. The control substrate and the TPM are joined by second screws via the third screw holes.Type: GrantFiled: April 20, 2005Date of Patent: October 14, 2008Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Koichi Ushijima, Hussein Khalid Hassan, Noboru Miyamoto
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Patent number: 7414867Abstract: An insulated gate bipolar transistor and a protective circuit are incorporated. The protective circuit has first and second Zener diodes connected in series in directions opposite to each other between the gate and the current sense terminal of the insulated gate bipolar transistor, and third and fourth Zener diodes connected in series in directions opposite to each other between the gate and the emitter of the insulated gate bipolar transistor.Type: GrantFiled: December 26, 2006Date of Patent: August 19, 2008Assignee: Mitsubishi Electric CorporationInventors: Khalid Hassan Hussein, Masuo Shinohara
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Patent number: D719200Type: GrantFiled: November 26, 2013Date of Patent: December 9, 2014Assignee: Victor Equipment CompanyInventor: Khalid Hassan
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Patent number: D720784Type: GrantFiled: May 30, 2014Date of Patent: January 6, 2015Assignee: Victor Equipment CompanyInventor: Khalid Hassan
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Patent number: D721111Type: GrantFiled: May 30, 2014Date of Patent: January 13, 2015Assignee: Victor Equipment CompanyInventor: Khalid Hassan