Abstract: A method for controllably forming crystalline silicon nitride (SiN) for use with semiconductor devices is disclosed. Crystalline SiN has favorable optical, electrical, and mechanical properties when compared to amorphous SiN. The method converts a deposited amorphous SiN layer into crystalline SiN at desired locations. The controlled conversion employs a two-step process. In the first step stress is induced in desired portions of the amorphous SiN layer. In the second step, the stressed portions, and adjacent areas are subjected to laser illumination to implement the conversion process. Depending upon the size and complexity of the desired crystalline SiN feature, one of multiple ways of inducing the stress may be employed. The deposition and conversion process is compatible with standard complementary metal oxide semiconductor (CMOS) processes.