Abstract: The present invention relates to a tool for determining, improving and/or optimizing the change interval of a functional fluid utilized in a piece of equipment by using information on the piece of the equipment and its operating conditions. In particular, the present invention relates to the optimization of the oil drain interval of a vehicle by using a base change interval and optimizing it based on the operating conditions the vehicle experiences.

Abstract: The present invention relates to a tool for determining, improving and/or optimizing the change interval of a functional fluid utilized in a piece of equipment by using information on the piece of the equipment and its operating conditions. In particular, the present invention relates to the optimization of the oil drain interval of a vehicle by using a base change interval and optimizing it based on the operating conditions the vehicle experiences.

Abstract: A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×1019 atoms/cc, and a second epitaxial layer having a change in concentration in its first 40 OE from the first layer of greater than 1×1019 P atoms/cc. Alternatively, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.

Abstract: An integrated optoelectronic circuit and process for making is described incorporating a photodetector and a MODFET on a chip. The chip contains a single-crystal semiconductor substrate, a buffer layer of SiGe graded in composition, a relaxed SiGe layer, a quantum well layer, an undoped SiGe spacer layer and a doped SiGe supply layer. The photodetector may be a metal-semiconductor-metal (MSM) or a p-i-n device. The detector may be integrated with an n- or p-type MODFET, or both in a CMOS configuration, and the MODFET can incorporate a Schottky or insulating gate. The invention overcomes the problem of producing Si-manufacturing-compatible monolithic high-speed optoelectronic circuits for 850 nm operation by using epixially-grown Si/SiGe heterostructure layers.