Abstract: An optical energy detector and a method for detecting a broad range of optical energy are disclosed. The detector comprising a superconducting nanowire filament on a substrate, an electrical current pulse source, a laser pulse source, a first pickup probe, and a second pickup probe for measuring the voltage across the filament. The filament is maintained below a supercomputing critical temperature. The filament is biased with an electrical current pulses slight below the critical current of the filament which creates nonequilibrium state. The filament is excited by the laser pulses, and as a result, a voltage appears after a delay time. The voltage is measured for determining the amount of the optical energy. A reference curve of the voltage and the corresponding delay time can be used for calibrating any light source.

Abstract: An optical energy detector and a method for detecting a broad range of optical energy are disclosed. The detector comprising a superconducting nanowire filament on a substrate, an electrical current pulse source, a laser pulse source, a first pickup probe, and a second pickup probe for measuring the voltage across the filament. The filament is maintained below a supercomputing critical temperature. The filament is biased with an electrical current pulses slight below the critical current of the filament which creates nonequilibrium state. The filament is excited by the laser pulses, and as a result, a voltage appears after a delay time. The voltage is measured for determining the amount of the optical energy. A reference curve of the voltage and the corresponding delay time can be used for calibrating any light source.

Abstract: A device, system and method for measuring the temperature at the center of a normal hotspot and the heat escape time in superconducting filament or nanowire toward the substrate. The device includes structured layers; a superconducting filament is implemented as an active layer where an electrical current pulse or single photon radiation generates a hot spot; a sensitive semiconductor layer of germanium serves as a temperature sensor (thermometer); and a thin layer of insulating silicon oxide is intercalated between the superconducting layer and the germanium having a thickness in the range of 2-10 nm and width 5-100 ?m. This device provides a direct measurement of the temperature at the center of a hot spot and determination of the heat escape time toward a substrate; and can be used to determine the sensitivity of a superconducting single photon detector device to a next upcoming photon.

Abstract: A device, system and method for measuring the temperature at the center of a normal hotspot and the heat escape time in superconducting filament or nanowire toward the substrate. The device includes structured layers; a superconducting filament is implemented as an active layer where an electrical current pulse or single photon radiation generates a hot spot; a sensitive semiconductor layer of germanium serves as a temperature sensor (thermometer); and a thin layer of insulating silicon oxide is intercalated between the superconducting layer and the germanium having a thickness in the range of 2-10 nm and width 5-100 ?m. This device provides a direct measurement of the temperature at the center of a hot spot and determination of the heat escape time toward a substrate; and can be used to determine the sensitivity of a superconducting single photon detector device to a next upcoming photon.

Abstract: A multiple arrayed parallel nanowire device includes one or more arrays connected in series, wherein each array includes a plurality of narrow nanowires flanked by one or more wide nanowires, a top electrode, an applied current, a bottom ground electrode, and one or more lateral electrodes where one or more currents or one or more probing voltages can be applied to detect voltage changes in each array. The device detects single and multiple photons without destroying superconductivity in all the nanowires in the array and is thus capable of remaining sensitive to subsequent photon impacts. Moreover, the device can resolve the location of each photon impact.

Abstract: A multiple arrayed parallel nanowire device includes one or more arrays connected in series, wherein each array includes a plurality of narrow nanowires flanked by one or more wide nanowires, a top electrode, an applied current, a bottom ground electrode, and one or more lateral electrodes where one or more currents or one or more probing voltages can be applied to detect voltage changes in each array. The device detects single and multiple photons without destroying superconductivity in all the nanowires in the array and is thus capable of remaining sensitive to subsequent photon impacts. Moreover, the device can resolve the location of each photon impact.

Abstract: A multiple arrayed parallel nanowire device includes one or more arrays connected in series, wherein each array includes a plurality of narrow nanowires flanked by one or more wide nanowires, a top electrode, an applied current, a bottom ground electrode, and one or more lateral electrodes where one or more currents or one or more probing voltages can be applied to detect voltage changes in each array. The device detects single and multiple photons without destroying superconductivity in all the nanowires in the array and is thus capable of remaining sensitive to subsequent photon impacts. Moreover, the device can resolve the location of each photon impact.

Abstract: A multiple arrayed parallel nanowire device includes one or more arrays connected in series, wherein each array includes a plurality of narrow nanowires flanked by one or more wide nanowires, a top electrode, an applied current, a bottom ground electrode, and one or more lateral electrodes where one or more currents or one or more probing voltages can be applied to detect voltage changes in each array. The device detects single and multiple photons without destroying superconductivity in all the nanowires in the array and is thus capable of remaining sensitive to subsequent photon impacts. Moreover, the device can resolve the location of each photon impact.

Abstract: A multiple arrayed parallel nanowire device includes one or more arrays connected in series, wherein each array includes a plurality of narrow nanowires flanked by one or more wide nanowires, a top electrode, an applied current, a bottom ground electrode, and one or more lateral electrodes where one or more currents or one or more probing voltages can be applied to detect voltage changes in each array. The device detects single and multiple photons without destroying superconductivity in all the nanowires in the array and is thus capable of remaining sensitive to subsequent photon impacts. Moreover, the device can resolve the location of each photon impact.

Abstract: A multiple arrayed parallel nanowire device includes one or more arrays connected in series, wherein each array includes a plurality of narrow nanowires flanked by one or more wide nanowires, a top electrode, an applied current, a bottom ground electrode, and one or more lateral electrodes where one or more currents or one or more probing voltages can be applied to detect voltage changes in each array. The device detects single and multiple photons without destroying superconductivity in all the nanowires in the array and is thus capable of remaining sensitive to subsequent photon impacts. Moreover, the device can resolve the location of each photon impact.

Abstract: The nanostructured anode-cathode array for optoelectronic devices is an interdigitated electrode assembly for organic optoelectronic devices. The electrode assembly provides efficiency enhancement in metal oxide (ZnO) and metal (Ag) electrodes for organic optoelectronic devices. The assembly has vertically orientated nanorods in a range of patterns, configurations and volume fractions. The rods have lateral dimensions in the range of 1 nm-500 nm and lengths of 1 nm-10,000 nm. The anode-cathode array can be tuned by altering the dimensions of the individual electrodes and/or modifying the center-to-center distance of anode-anode, cathode-cathode or anode-cathode pairs.