Patents by Inventor Khanh T. Nguyen

Khanh T. Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8107298
    Abstract: In a non-volatile storage system, the time needed to perform a programming operation is reduced by minimizing data transfers between sense modules and a managing circuit. A sense module is associated with each storage element. Based on write data, a data node in the sense module is initialized to “0” for a storage element which is to remain in an erased state, and to “1” for a storage element which is to be programmed to a programmed state, then flipped to “0” when programmed is completed. The managing circuit is relieved of the need to access the write data to determine whether a “0” represents a storage element for which programming is completed. Power consumption can also be reduced by keeping a bit line voltage high between a verify phase of one program-verify iteration and a program phase of a next program-verify iteration.
    Type: Grant
    Filed: January 29, 2010
    Date of Patent: January 31, 2012
    Assignee: SanDisk Technologies Inc.
    Inventors: Man L. Mui, Pao-Ling Koh, Tien-Chien Kuo, Khanh T. Nguyen
  • Publication number: 20110188317
    Abstract: In a non-volatile storage system, the time needed to perform a programming operation is reduced by minimizing data transfers between sense modules and a managing circuit. A sense module is associated with each storage element. Based on write data, a data node in the sense module is initialized to “0” for a storage element which is to remain in an erased state, and to “1” for a storage element which is to be programmed to a programmed state, then flipped to “0” when programmed is completed. The managing circuit is relieved of the need to access the write data to determine whether a “0” represents a storage element for which programming is completed. Power consumption can also be reduced by keeping a bit line voltage high between a verify phase of one program-verify iteration and a program phase of a next program-verify iteration.
    Type: Application
    Filed: January 29, 2010
    Publication date: August 4, 2011
    Inventors: Man L. Mui, Pao-Ling Koh, Tien-Chien Kuo, Khanh T. Nguyen
  • Patent number: 7118715
    Abstract: A baffle-style stripper for an FCC process comprising sloped baffles in which a greater volumetric flow rate of stripping medium permeates openings in a bottom section of the baffle than through a top section of the baffle for low catalyst flux stripping operations. When low catalyst flux is used, the catalyst runs from baffle to baffle closer to the bottom edge of the baffle. Hence, more fluidization from stripping medium is concentrated near the lower edge of the baffle. The greater fluidization at the bottom section of the baffle is accomplished by providing greater opening area per baffle area in the lower section of the baffle than in the top section of the baffle.
    Type: Grant
    Filed: November 20, 2003
    Date of Patent: October 10, 2006
    Assignee: UOP LLC
    Inventors: Brian W. Hedrick, Thuy Khanh T. Nguyen
  • Patent number: 7095654
    Abstract: A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.
    Type: Grant
    Filed: September 9, 2005
    Date of Patent: August 22, 2006
    Assignee: SanDisk Corporation
    Inventors: Khandker N. Quader, Khanh T. Nguyen, Feng Pan, Long C. Pham, Alexander K. Mak
  • Patent number: 6967872
    Abstract: A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.
    Type: Grant
    Filed: December 18, 2001
    Date of Patent: November 22, 2005
    Assignee: SanDisk Corporation
    Inventors: Khandker N. Quader, Khanh T. Nguyen, Feng Pan, Long C. Pham, Alexander K. Mak
  • Patent number: 6944068
    Abstract: A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.
    Type: Grant
    Filed: March 24, 2004
    Date of Patent: September 13, 2005
    Assignee: SanDisk Corporation
    Inventors: Khandker N. Quader, Khanh T. Nguyen, Feng Pan, Long C. Pham, Alexander K. Mak
  • Patent number: 6839055
    Abstract: A system for providing an error indication of video data received from a first link of a data interface between a computer system video controller and a display system and for providing the error indication to the video controller from the display system via a second link of the data interface. Such a system can be utilized to determine if an error condition exits in the video data path between the video controller and display system. In one example, the data interface conforms to the Digital Visual Interface (DVI) specification. A diagnostic routine of an operating system can be utilized to generate a set of test video data and compare the generated error indication with a standard error indication to determined an error condition. Also, such a system allows a remote system to request a test of the video data path. In one embodiment, the error indication is provided to the video controller from the display system by inserting the error indication into a display information data structure such as, e.g.
    Type: Grant
    Filed: January 25, 2000
    Date of Patent: January 4, 2005
    Assignee: Dell Products L.P.
    Inventor: Khanh T. Nguyen
  • Publication number: 20040179404
    Abstract: A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.
    Type: Application
    Filed: March 24, 2004
    Publication date: September 16, 2004
    Inventors: Khandker N. Quader, Khanh T. Nguyen, Feng Pan, Long C. Pham, Alexander K. Mak
  • Patent number: 6780308
    Abstract: A baffle-style stripper for an FCC process comprising sloped baffles in which a greater volumetric flow rate of stripping medium permeates openings in a bottom section of the baffle than through a top section of the baffle for low catalyst flux stripping operations. When low catalyst flux is used, the catalyst runs from baffle to baffle closer to the bottom edge of the baffle. Hence, more fluidization from stripping medium is concentrated near the lower edge of the baffle. The greater fluidization at the bottom section of the baffle is accomplished by providing greater opening area per baffle area in the lower section of the baffle than in the top section of the baffle.
    Type: Grant
    Filed: November 21, 2001
    Date of Patent: August 24, 2004
    Assignee: UOP LLC
    Inventors: Brian W. Hedrick, Thuy Khanh T. Nguyen
  • Publication number: 20030112663
    Abstract: A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.
    Type: Application
    Filed: December 18, 2001
    Publication date: June 19, 2003
    Inventors: Khandker N. Quader, Khanh T. Nguyen, Feng Pan, Long C. Pham, Alexander K. Mak
  • Patent number: 5142250
    Abstract: Conversion of electron beam energy into high power microwave energy is efted within the cavity of a Klystron device to which the electron beam is accelerated from a continuous supply source through an ion focussing channel. Ion focussing is achieved by establishment of a preionized background plasma within the channel to modulate the current of the electron beam in response to wake field effects and cause bunching of the electron beam during propagation to the Klystron device.
    Type: Grant
    Filed: January 14, 1992
    Date of Patent: August 25, 1992
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Han S. Uhm, Khanh T. Nguyen
  • Patent number: H2010
    Abstract: A gyrotron gun that generates gyrating electron beams in a controllable manner suitable for use in a wide range of gyro-amplifiers and gyro-oscillators is disclosed. The gyrotron comprises first and second means for abruptly changing a magnetic field and which means are positioned between first, second and third field coils. The field coils are operated so as to provide for a desired magnetic field profile that allows for the control of the parameters desired to provide for small-orbit, large-orbit, and linear modes of operation of the gyrotron gun. The gyrotron gun further comprises of a pair of bucking coils arranging near the cathode to independently control the axial velocity spread of the gyrating electron beam.
    Type: Grant
    Filed: March 2, 1995
    Date of Patent: January 1, 2002
    Assignee: United States of America
    Inventors: Khanh T. Nguyen, David N. Smithe