Abstract: A method of preparing at least one layer of a multilayer dielectric (MLD) film stack by producing a sol from a mixture that comprises an epoxide and at least one precursor to a metal oxide, depositing the sol on a substrate, and preparing a metal oxide layer from the deposited sol. The mixture can also include one or any combination of a solvent, water, a precursor to a glassforming oxide, at least one modifier, a cosolvent, or a porogen. Two or more layers of the film stack can be prepared in similar fashion using the same or different sols.

Abstract: A seed layer is formed on a substrate using a first biological agent. The seed layer may comprise densified nanoparticles which are bound to the biological agent. The seed layer is then used for a deposition of a metal layer, such as a barrier layer, an interconnect layer, a cap layer and/or a bus line for a solid state device.

Abstract: An aqueous substrate surface treatment composition includes cysteine and an acidic solution having a pH of about 7 or less. The composition enables a selective deposition of a metal ion sensitizer and a subsequent selective plating of a metallic cap layer. Various CoWP plating bath compositions are also provided which may be used to form the cap layer.

Abstract: A seed layer is formed on a substrate using a first biological agent. The seed layer may comprise densified nanoparticles which are bound to the biological agent. The seed layer is then used for a deposition of a metal layer, such as a barrier layer, an interconnect layer, a cap layer and/or a bus line for a solid state device.

Abstract: An aqueous substrate surface treatment composition includes cysteine and an acidic solution having a pH of about 7 or less. The composition enables a selective deposition of a metal ion sensitizer and a subsequent selective plating of a metallic cap layer. Various CoWP plating bath compositions are also provided which may be used to form the cap layer.