Patents by Inventor Kheng-Jin Chan

Kheng-Jin Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrates for semiconductor packages
    Patent number: 10937709
    Abstract: A substrate includes a dielectric layer, a first metal bar, a plurality of first traces, a plurality of first openings, a second metal bar, and at least one second opening. The dielectric layer has a first major surface and a second major surface opposite to the first major surface. The first metal bar is on the first major surface. The plurality of first traces are on the first major surface. Each first trace is connected at one end to the first metal bar. The plurality of first openings expose the dielectric layer on the first major surface and intersect a first trace. The second metal bar is on the second major surface. The at least one second opening exposes the dielectric layer on the second major surface and intersects the second metal bar. The first openings are laterally offset with respect to the at least one second opening.
    Type: Grant
    Filed: January 11, 2019
    Date of Patent: March 2, 2021
    Assignee: Infineon Technologies AG
    Inventors: Carlo Marbella, Kheng-Jin Chan
  • SUBSTRATES FOR SEMICONDUCTOR PACKAGES
    Publication number: 20200227330
    Abstract: A substrate includes a dielectric layer, a first metal bar, a plurality of first traces, a plurality of first openings, a second metal bar, and at least one second opening. The dielectric layer has a first major surface and a second major surface opposite to the first major surface. The first metal bar is on the first major surface. The plurality of first traces are on the first major surface. Each first trace is connected at one end to the first metal bar. The plurality of first openings expose the dielectric layer on the first major surface and intersect a first trace. The second metal bar is on the second major surface. The at least one second opening exposes the dielectric layer on the second major surface and intersects the second metal bar. The first openings are laterally offset with respect to the at least one second opening.
    Type: Application
    Filed: January 11, 2019
    Publication date: July 16, 2020
    Applicant: Infineon Technologies AG
    Inventors: Carlo Marbella, Kheng-Jin Chan