Patents by Inventor Khoa Dang

Khoa Dang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12104385
    Abstract: Disclosed is a building and construction material and process including multiple layers and vermiculite ore in at least one layer. A substrate layer may have one or more layers on top or on the bottom of it. Numerous compounds may be used in one or more of the layers including asphaltic compound, polymer modified asphalt compound, thermoplastic polymer compound and others. The layers may also include synergistic flame retardant and fillers. And disclosed is a process to manufacture the building and construction material.
    Type: Grant
    Filed: April 30, 2021
    Date of Patent: October 1, 2024
    Assignee: POLYGLASS S.p.A.
    Inventors: Elvira Joana Ferreira Peralta, Betiana Andrea Acha, Khoa Dang, Marco Yoshua Sieber, Louis Lynn Grube
  • Publication number: 20210340768
    Abstract: Disclosed is a building and construction material and process including multiple layers and vermiculite ore in at least one layer. A substrate layer may have one or more layers on top or on the bottom of it. Numerous compounds may be used in one or more of the layers including asphaltic compound, polymer modified asphalt compound, thermoplastic polymer compound and others. The layers may also include synergistic flame retardant and fillers. And disclosed is a process to manufacture the building and construction material.
    Type: Application
    Filed: April 30, 2021
    Publication date: November 4, 2021
    Applicant: POLYGLASS S.p.A.
    Inventors: Elvira Joana Ferreira Peralta, Betiana Andrea Acha, Khoa Dang, Marco Yoshua Sieber, Louis Lynn Grube
  • Publication number: 20060076646
    Abstract: The present invention is a modified darlington phototransistor wherein a phototransistor is coupled to a Bipolar Junction Transistor (BJT). This design provides a high sensitivity and a fast response and effectively increases the gain of the photocurrent. This circuit is particularly will suited for the readily available CMOS and Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) processes prevalent today.
    Type: Application
    Filed: October 7, 2004
    Publication date: April 13, 2006
    Inventors: Khoa Dang, Conrad Terrill