Abstract: In one implementation, a method of monitoring film selectivity on a substrate, comprises: generating light from a light source; collimating the light from the light source to form a collimated beam; reflecting the collimated beam off of a surface to be measured to produce a reflected beam; splitting the reflected beam with a dichroic mirror, wherein the reflected beam splits into a first beam and a second beam; receiving, by a pyrometer, the first beam from the dichroic mirror; receiving, by a spectrometer, the second beam from the dichroic mirror; and analyzing data derived from the pyrometer and the spectrometer to determine the film selectivity the surface to be measured.

Abstract: Embodiments of the present disclosure relate to substrate processing systems, methods, and related apparatus and chambers for detecting processing shifts. In one or more embodiments, a system for processing substrates includes a chamber body. The system includes one or more heat sources operable to heat a processing volume, a substrate support disposed in the processing volume, and a sensor operable to measure an emissivity in the processing volume. The system includes a controller including instructions that, when executed by a processor, cause a plurality of operations to be conducted. The plurality of operations include analyzing the measured emissivity for a time period. The analyzing includes generating a signal profile of the measured emissivity over the time period. The plurality of operations include detecting a shift in the signal profile along a shift section of the signal profile and adjusting a process parameter in response to the detection of the shift.

Abstract: A flow apparatus and process chamber having the same are described herein. In one example, flow apparatus for use in semiconductor processing comprises an inject assembly and an inductive heater coupled to the inject assembly. The inject assembly comprises an inject body, a first gas inlet configured to flow a first gas through the inject body, and a plurality of flow channels disposed in the inject body, the plurality of flow channels coupled to the first gas inlet. The inductive heater is configured to heat a gas and comprises a heater housing, a graphite rod disposed in the heater housing, the graphite rod having a distal end and proximate end, an inductive coil disposed around the graphite rod, and a second gas inlet configured to flow a second gas between the heater housing and a graphite rod.

Abstract: Embodiments of the disclosure provided herein include a system and method for improved signal-to-noise ratio correction in an epitaxial chamber integrating in-situ reflectometry. The system includes a processing chamber and a susceptor assembly configured to rotate a substrate. An in-situ reflectometry (ISR) system is coupled to the processing chamber and configured to receive ISR signals indicating properties of a substrate on the susceptor assembly. A controller is configured to determine substrate rotation speed, determine time per substrate revolution using the substrate rotation speed, determine an ISR samples acquisition per revolution using the time per substrate revolution, calculate a total samples value using an integer value and the ISR samples acquisition per revolution, determine if the total samples value is a full integer, and upon determining that the total samples value is a full integer, calibrate the ISR signals using the total samples value.

Abstract: The present disclosure relates to chamber kits, systems, and methods for calibrating temperature sensors for semiconductor manufacturing. In one or more embodiments, a chamber kit for processing chambers applicable for semiconductor manufacturing includes a plate formed of a transparent material. The plate includes an opening formed in an outer face of the plate. The chamber kit includes a first calibration substrate positioned at least partially in the opening of the plate, and the first calibration substrate is formed of a first material. The chamber kit includes a second calibration substrate positioned at least partially in the opening of the plate, and the second calibration substrate is formed of a second material that is different than the first material.

Abstract: Embodiments of the present disclosure relate to measuring systems, processing systems, and related apparatus and methods that include band gap materials for temperature measurement calibration. In one or more embodiments, a measurement system includes a substrate support assembly that includes an inner section and an outer section. The inner section includes a first face, a second face opposing the first face, one or more first support recesses formed in the first face, and one or more openings extending between the one or more first support recesses and the second face. The measurement system includes one or more calibration substrates sized and shaped for positioning at least partially in the one or more first support recesses. The measurement system includes a band edge calibration assembly that includes an energy source and a band edge detector.

Abstract: The present disclosure generally relate to an apparatus and method for metrology of properties and thicknesses of films selectively deposited on a substrate, such as a patterned substrate. In one embodiment, the method includes placing a substrate in a process chamber having an in-situ reflectometry system integrated therein and establishing a reference data set using the in-situ reflectometry system for a selected region of the substrate. The substrate is then processed in the process chamber in which a film is selectively deposited on the selected region of the substrate. A thickness of the film deposited on the selected region may then be determined and/or monitored using the in-situ reflectometry system based on the reference data set.

Abstract: An apparatus, method, and system for calibrating substrate positioning and placement on a substrate support in a process chamber via imaging. In an embodiment, a calibrating substrate is provided. The calibrating substrate generally includes a top surface having a plurality of first marking features and a at least one edge marking feature configured to be detectable relative to the remaining portions of the top surface of the body by an imaging apparatus.

Abstract: Embodiments of the present disclosure relates to methods, systems, and apparatus for monitoring radiation output of lamps of processing chambers. In some embodiments, a system contains a plurality of lamps coupled to a chamber, and one or more radiation sensors. Each lamp is identified with one or more zones, the radiation sensors are coupled to the chamber, where each radiation sensor is proximal at least one lamp. A controller contains instructions that, when executed, cause: the radiation sensors to convey, to the controller, information associated with radiation emitted by the lamps; the controller to analyze the information, the analyzing including: for each zone: determining a function of radiation over time; and monitoring the function for a condition associated with lamp aging; and the controller to, based on the analyzing the information, perform at least one of the following: vary input power delivered to the lamps; and generate an alert.

Abstract: The present disclosure relates to methods, systems, and apparatus for monitoring temperature at multiple sites within a substrate processing chamber. A system for processing substrates includes: a process chamber comprising a processing volume, a first window at a first perimeter of the processing volume, a substrate support within the processing volume; and a first multi-wavelength pyrometer configured to measure: a first temperature at a first site proximal the first window, and a second temperature at a second site proximal the substrate support.

Abstract: Embodiments of the present disclosure generally relate to apparatus and systems for in-situ film growth rate monitoring and include a system to monitor film growth on a substrate including a light source, a collimator, a dichroic mirror, and a filter all along a propagation path and in optical communication along the propagation path. The propagation path splits into a first sub-path and second sub-path at the dichroic mirror. The first sub-path is directed to a pyrometer, and the second sub-path is directed to a spectrometer.

Abstract: In one implementation, a method of monitoring film thickness on a substrate, comprises: generating light from a light source; collimating the light from the light source to form a collimated beam; reflecting the collimated beam off of a surface to be measured to produce a reflected beam; splitting the reflected beam with a dichroic mirror, wherein the reflected beam splits into a first beam and a second beam; receiving, by a pyrometer, the first beam from the dichroic mirror; receiving, by a spectrometer, the second beam from the dichroic mirror; and analyzing data derived from the pyrometer and the spectrometer to determine one or more characteristics of the surface to be measured.

Abstract: Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a disk and liner assembly includes a quartz disk having an outer diameter, a plurality of holes or slots formed in the quartz disk, and a quartz ring having an inner diameter less than the outer diameter of the quartz disk.

Abstract: Embodiments of the present disclosure relates to methods, systems, and apparatus for monitoring radiation output of lamps of processing chambers. In some embodiments, a system contains a plurality of lamps coupled to a chamber, and one or more radiation sensors. Each lamp is identified with one or more zones, the radiation sensors are coupled to the chamber, where each radiation sensor is proximal at least one lamp. A controller contains instructions that, when executed, cause: the radiation sensors to convey, to the controller, information associated with radiation emitted by the lamps; the controller to analyze the information, the analyzing including: for each zone: determining a function of radiation over time; and monitoring the function for a condition associated with lamp aging; and the controller to, based on the analyzing the information, perform at least one of the following: vary input power delivered to the lamps; and generate an alert.

Abstract: Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.

Abstract: Implementations of the present disclosure generally relate to an improved factory interface that is coupled to an on-board metrology housing configured for measuring film properties of a substrate. In one implementation, an apparatus comprises a factory interface, and a metrology housing removably coupled to the factory interface through a load port, the metrology housing comprises an on-board metrology assembly for measuring properties of a substrate to be transferred into the metrology housing.

Abstract: In an embodiment, a method includes depositing a silicon matrix on a substrate; exposing the silicon matrix to a first wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber; exposing the silicon matrix to a second wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the second wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range; exposing the silicon matrix to a third wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the third wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range and second wavelength or wavelength range; and a repeat exposure of any wavelength range. In some embodiments, a healing operation comprising a deposition operation, a reactive cure, a thermal cure, or a combination thereof may be performed.

Abstract: Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.

Abstract: Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.

Abstract: In an embodiment, a method includes depositing a silicon matrix on a substrate; exposing the silicon matrix to a first wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber; exposing the silicon matrix to a second wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the second wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range; exposing the silicon matrix to a third wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the third wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range and second wavelength or wavelength range; and a repeat exposure of any wavelength range. In some embodiments, a healing operation comprising a deposition operation, a reactive cure, a thermal cure, or a combination thereof may be performed.