Patents by Inventor Ki Byung PARK

Ki Byung PARK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices including a device isolation region in a substrate and/or fin
    Patent number: 10566326
    Abstract: Semiconductor devices are provided. A semiconductor device includes a semiconductor substrate. The semiconductor device includes first and second source/drain regions in the semiconductor substrate. Moreover, the semiconductor device includes a multi-layer device isolation region in the semiconductor substrate between the first and second source/drain regions. The multi-layer device isolation region includes a protruding portion that protrudes away from the semiconductor substrate beyond respective uppermost surfaces of the first and second source/drain regions.
    Type: Grant
    Filed: July 6, 2017
    Date of Patent: February 18, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dae Young Kwak, Ki Byung Park, Kyoung Hwan Yeo, Seung Jae Lee, Kyung Yub Jeon, Seung Seok Ha, Sang Jin Hyun
  • SEMICONDUCTOR DEVICES INCLUDING A DEVICE ISOLATION REGION IN A SUBSTRATE AND/OR FIN
    Publication number: 20180090493
    Abstract: Semiconductor devices are provided. A semiconductor device includes a semiconductor substrate. The semiconductor device includes first and second source/drain regions in the semiconductor substrate. Moreover, the semiconductor device includes a multi-layer device isolation region in the semiconductor substrate between the first and second source/drain regions. The multi-layer device isolation region includes a protruding portion that protrudes away from the semiconductor substrate beyond respective uppermost surfaces of the first and second source/drain regions.
    Type: Application
    Filed: July 6, 2017
    Publication date: March 29, 2018
    Inventors: Dae Young Kwak, Ki Byung Park, Kyoung Hwan Yeo, Seung Jae Lee, Kyung Yub Jeon, Seung Seok Ha, Sang Jin Hyun
  • Method for manufacturing semiconductor device
    Patent number: 9741854
    Abstract: There is provided a method for manufacturing a semiconductor device including a substrate including a plurality of active regions, a plurality of gate electrodes extending in a first direction to intersect a portion of the plurality of active regions, and including first and second gate electrodes disposed to be adjacent to each other in the first direction, a gate isolation portion disposed between the first and second gate electrodes. The gate isolation portion includes a first layer and second layers disposed on both ends of the first layer in a second direction perpendicular to the first direction.
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: August 22, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Keun Hee Bai, Kyoung Hwan Yeo, Seung Seok Ha, Seung Ju Park, Do Hyoung Kim, Myeong Cheol Kim, Jae Hyoung Koo, Ki Byung Park
  • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20160181425
    Abstract: There is provided a method for manufacturing a semiconductor device including a substrate including a plurality of active regions, a plurality of gate electrodes extending in a first direction to intersect a portion of the plurality of active regions, and including first and second gate electrodes disposed to be adjacent to each other in the first direction, a gate isolation portion disposed between the first and second gate electrodes. The gate isolation portion includes a first layer and second layers disposed on both ends of the first layer in a second direction perpendicular to the first direction.
    Type: Application
    Filed: December 4, 2015
    Publication date: June 23, 2016
    Inventors: Keun Hee BAI, Kyoung Hwan YEO, Seung Seok HA, Seung Ju PARK, Do Hyoung KIM, Myeong Cheol KIM, Jae Hyoung KOO, Ki Byung PARK