Patents by Inventor Ki Chang

Ki Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming low capacitance ESD device and structure therefor
    Patent number: 8039359
    Abstract: In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
    Type: Grant
    Filed: February 27, 2009
    Date of Patent: October 18, 2011
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Thomas Keena, Ki Chang, Francine Y. Robb, Mingjiao Liu, Ali Salih, John Michael Parsey, Jr., George Chang
  • Multi-channel ESD device and method therefor
    Patent number: 7579632
    Abstract: In one embodiment, an ESD device is configured to include a zener diode and a P-N diode.
    Type: Grant
    Filed: September 21, 2007
    Date of Patent: August 25, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Ali Salih, Mingjiao Liu, Sudhama C. Shastri, Thomas Keena, Gordon M. Grivna, John Michael Parsey, Jr., Francine Y. Robb, Ki Chang
  • METHOD OF FORMING LOW CAPACITANCE ESD DEVICE AND STRUCTURE THEREFOR
    Publication number: 20090162988
    Abstract: In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
    Type: Application
    Filed: February 27, 2009
    Publication date: June 25, 2009
    Inventors: Thomas Keena, Ki Chang, Francine Y. Robb, Mingjiao Liu, Ali Salih, John Michael Parsey, JR., George Chang
  • Method of forming low capacitance ESD device and structure therefor
    Patent number: 7538395
    Abstract: In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
    Type: Grant
    Filed: September 21, 2007
    Date of Patent: May 26, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Thomas Keena, Ki Chang, Francine Y. Robb, Mingjiao Liu, Ali Salih, John Michael Parsey, Jr., George Chang
  • METHOD OF FORMING LOW CAPACITANCE ESD DEVICE AND STRUCTURE THEREFOR
    Publication number: 20090079022
    Abstract: In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
    Type: Application
    Filed: September 21, 2007
    Publication date: March 26, 2009
    Inventors: Thomas Keena, Ki Chang, Francine Y. Robb, Mingjiao Liu, Ali Salih, John Michael Parsey, JR., George Chang
  • MULTI-CHANNEL ESD DEVICE AND METHOD THEREFOR
    Publication number: 20090079001
    Abstract: In one embodiment, an ESD device is configured to include a zener diode and a P-N diode.
    Type: Application
    Filed: September 21, 2007
    Publication date: March 26, 2009
    Inventors: Ali Salih, Mingjiao Liu, Sudhama C. Shastri, Thomas Keena, Gordon M. Grivna, John Michael Parsey, JR., Francine Y. Robb, Ki Chang
  • Inverted-F antenna and mobile communication terminal using the same
    Publication number: 20070262909
    Abstract: An inverted-F antenna and a mobile communication terminal using the same. The antenna includes a flexible board and a radiation plate formed on the flexible board. The antenna further includes a signal line having a first end formed on the flexible board and connected to the radiation plate and a second end extending from the first end and provided as a connecting terminal for feeding and grounding. The mobile communication terminal includes an RF board, a ground plate formed on the RF board, a feed line formed on the RF board for supplying a signal, and the inverted-F antenna as described above.
    Type: Application
    Filed: May 4, 2007
    Publication date: November 15, 2007
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Ki Chang, Duk Lee, Jeong Seo
  • Novel enantiomers of etrahydroisoquinoline derivatives and theirpharmaceutically acceptable salts, their preparations and pharmaceutical compositions
    Publication number: 20060058346
    Abstract: The disclosure concerns novel enantiomers of tetrahydroisoquinoline derivatives and their pharmaceutically acceptable salts, their preparations and pharmaceutical compositions. The enantiomers of tetrahydroisoquinoline derivatives are provided which are useful in stimulating heart rate and hypotensive activity, inhibitory activity against platelet aggregation, and suppressive against inducible NO synthase. The enantiomers of tetrahydroisoquinoline derivatives and their pharmaceutically acceptable salts are effective for treating congestive heart failure, hypertension, thrombosis, inflammation, septicemia, cardiac insufficiency, and disseminated intravascular coagulopathy.
    Type: Application
    Filed: October 5, 2002
    Publication date: March 16, 2006
    Inventors: Hye-Sook Yun-Choi, Ki Chang